• Title/Summary/Keyword: BM3D

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Isoindigo Based Small Molecules for High-Performance Solution-Processed Organic Photovoltaic Devices

  • Elsawy, W.;Lee, C.L.;Cho, S.;Oh, S.H.;Moon, S.H.;Elbarbary, A.;Lee, Jae-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.245.2-245.2
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    • 2013
  • Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

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Study on Electrical Environmental Obstacle Using a 765kV Double Circuit Test Line (765kV 시험선로를 이용한 전기환경장해 특성연구)

  • Kim, Jeong-Boo;Jo, Seong-Sae;Shin, Goo-Yong;Lee, Dong-Il;Yang, Kwang-Ho;Ahn, Hee-Sung;Bae, Jeong-Hyo;Koo, Ja-Yoon;Min, Seok-Weon
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1517-1519
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    • 1994
  • This paper describes electrical environmental study of a 765kV double circuit test line. Corona performance on several candidate conductor bundles has been investigated in the corona cage (single phase simulation facility) since 1984. We have known that six RAIL conductor bundle is the most suitable for the 765kV transmission Line, [3] To investigate electrical environmental impact of the future commerciale line, we build a full sacle 765kV test line in 1993. The test results of Audible Noise, Radio Interference, TV Interference from August, 1993 to Jan. 1994 were measured as $48.7[dBA](L_{50})$. $57.4[dB{\mu}V/m]$(Fair weather, $L_{50})$. $14.5[dB${\mu}$V/m]$(Fair weather, $L_{50}$). We have found that the Audible Noise data were very close to the predicted(48.5 [dBA]) by BPA Corona and Field Effects Computer program, however, the RI and TVI data were much higher than predicted(42 [dBmV/m], $7.9[dB{\mu}V/m)$ by the BPA program. We have investigating the reason of the difference. In the constructing of full scale test line, we developed the tubular tower, 765kV test transformer and hardwares of 765kV transmission line insulator strings. Also we will investigate the effects of plants under the 765kV test Line.

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LNB Design and Fabrication for Flyaway Satellite Terminal (운반형 위성단말 저잡음 하향 주파수변환기 설계 및 제작)

  • Kim, Joo-Yeon;Shin, Kwan-Ho
    • Journal of IKEEE
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    • v.24 no.1
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    • pp.81-89
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    • 2020
  • This paper describes the design and fabrication of a LNB(Low Noise Block downd-converter) which is a component of a FST(Flyaway Satellite Terminal), one of the ET(Earth Terminal) of the military satellite. LNB is physically composed of an down-converter module, a low noise amplifier module, a transmit band suppression filter, a isolator, a housing, and a cable assembly. It was designed using simulator (AWR) to satisfy the electrical characteristics of LNB's such as gain, noise figure and unwanted signal. The gain and noise figure characteristics were measured at 61.4dBm and 1.37dB, respectively. The unwanted wave was measured at -66.79dBc. Of the electrical requirements of Table 1, not only the above three but also all other items were confirmed to be satisfied.

A Design and Implementation of a Transceiver for LMDS Using the Monolithic Duplexer (모노리딕 듀플렉서형의 LMDS(Local Multi-point Distribution Service)용 송수신기 모듈의 설계 및 구현)

  • 오인열;정구희;나극환
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.8A
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    • pp.1417-1427
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    • 2001
  • 본 논문에서는 밀리미터파를 이용하여 사용자에게 양방향 무선 멀티미디어의 구현을 가능케 하는 LMDS 송수신 모듈을 설계, 구현하였다. 제작된 LMDS 송수신 모듈은 신서사이져, 혼합기, 저잡음 증폭기, 고출력 증폭기, 듀플렉서 등으로 구성하였으며, 전체적으로는 전원부와 제어부를 통하여 이상여부를 감시하며, 송수신 모듈에 이상이 발생했을 때 이를 보호할 수 있도록 구현하였다. 여기서 DAVIC 표준에 맞도록 IF부 대역은 0.95∼1.45GHz의 500MHz 대역폭에서 동작하도록 제작하였고, 상하향 혼합기는 격리도 특성을 최대화하였으며, 이를 위해 하이브리드 링형을 이용한 다이오드 평형 구조를 적용하여 설계하였다. 혼합기로 주입되는 Local 주파수는 안정도가 높아야 함으로 유전체 공진형 발진기로 구현하였다. 또한 저잡음 증폭기와 고출력 증폭기는 정보통신부에서 공고한 3사 주파수 대역을 모두 수용할 수 있도록 24GHz∼26.5GHz의 대역에서 정상적인 동작을 할 수 있도록 설계하였으며, 특히 저잡음 증폭기는 잡음 환경에서 작은 신호를 손실 없이 얻을 수 있도록 잡음지수를 최소화하고, 30dB 이상의 충분한 이득이 구현되도록 하였다. 고출력 증폭기는 15dBm 이상의 출력을 송신하면서도 선형성에 문제가 없도록 혼변조왜곡(IMD) 특성을 고려하여 설계하였다. 그리고 듀플렉서는 우수한 주파수 선택도와 낮은 삽입손실 특성을 갖도록 송수신 필터 모두 5개의 공진기를 포함한 Chebyshev형 구조를 갖으며 생산성이 뛰어난 모노리딕형으로 구현하여, LMDS 송수신 성능을 구현하였다.

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A Transimpedance Amplifier Employing a New DC Offset Cancellation Method for WCDMA/LTE Applications

  • Lee, Cheongmin;Kwon, Kuduck
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.825-831
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    • 2016
  • In this paper, a transimpedance amplifier based on a new DC offset cancellation (DCOC) method is proposed for WCDMA/LTE applications. The proposed method applies a sample and hold mechanism to the conventional DCOC method with a DC feedback loop. It prevents the removal of information around the DC, so it avoids signal-to-noise ratio degradation. It also reduces area and power consumption. It was designed in a $0.13{\mu}m$ deep n-well CMOS technology and drew a maximum current of 1.58 mA from a 1.2 V supply voltage. It showed a transimpedance gain of $80dB{\Omega}$, an input-referred noise current lower than 0.9 pA/${\surd}$Hz, an out-of-band input-referred 3rd-order intercept point more than 9.5 dBm, and an output DC offset lower than 10 mV. Its area is $0.46mm{\times}0.48mm$.

Design of Flexible Liquid RFID Tag Antenna for attaching glass bottle (액체용기 부착을 위한 소형 플렉시블 특수태그 설계)

  • Yun, Jung-Mee;Ji, Sung-Hwan;Lee, Sang-Hak
    • Proceedings of the Korean Information Science Society Conference
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    • 2010.06d
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    • pp.408-411
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    • 2010
  • 본 논문에서는 의약품, 음료수병 등 액체용기에 부착이 가능하며, 주변 유전체에 의한 성능열화가 적고 소형으로 바코드를 대신하여 용기에 부착이 가능한 플렉시블 RFID 특수태그 안테나를 제안하였다. 제안된 태그 안테나는 PET 기판 위에 미앤더 기법으로 제작되어 제작 및 대량 생산에 용이하며, 범용 RFID의 사용주파수 (860~960MHz)를 만족시키고, 주변 유전물의 영향으로 인한 성능변화를 최소화할 수 있도록 설계하였다. 제안된 태그 안테나는 본체 중앙부에 T 정합회로를 사용하고 미앤더 구조와 직선 구조의 보조선로 2개를 본체 상단에 삽입하여, 캐패시티브 결합을 이용해 태그칩과의 임피던스 공액정합이 쉽게 이루어지도록 하였다. 또한 2개의 보조선로가 각각 다른 부착물체의 유전율에 상호 보완적으로 전류를 유기시 키도록 하여 주변 유전 물질의 영향에 의한 반사손실을 만족하도록 하였다. 본 태그의 성능은 송신출력 20dBm, 안테나 이득 6dBi인 리더 안테나를 사용하였을 때 자유공간에서는 3.5m, 유리 부착 시 2.61m, 액체가 든 유리병 부착 시 2.51m 의 인식거리 성능을 보였다.

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A High Power 60 GHz Push-Push Oscillator Using $0.12{\mu}m$ Metamorphic HEMTs (60 GHz 대역 고출력 $0.12{\mu}m$ MHEMT Push-Push 발진기)

  • Lee, Jong-Wook;Kim, Sung-Won;Kim, Kyoung-Woon;Seol, Gyung-Seon;Kwon, Young-Woo;Seo, Kwang-Seok
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.495-498
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    • 2006
  • This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 um metamorphic high electron-mobility transistors (mHEMTs). The devices with a $0.1{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, and an $f_T$ of 170 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than -35 dBc fundamental suppression. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

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77 GHz Power Amplifier MMIC by 120nm InAlAs/InGaAs Metamorphic HEMT (MMIC by 120nm InAlAs/InGaAs Metamorphic HEMT를 이용한 77 GHz 전력 증폭기 제작)

  • Kim, Sung-Won;Seol, Gyung-Sun;Kim, Kyoung-Woon;Choi, Woo-Yeol;Kwon, Young-Woo;Seo, Kwang-Seok
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.553-554
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    • 2006
  • In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

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Regenerative Er-doped Fiber Amplifier System for High-repetition-rate Optical Pulses

  • Liu, Yan;Wu, Kan;Li, Nanxi;Lan, Lanling;Yoo, Seongwoo;Wu, Xuan;Shum, Perry Ping;Zeng, Shuguang;Tan, Xinyu
    • Journal of the Optical Society of Korea
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    • v.17 no.5
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    • pp.357-361
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    • 2013
  • A regenerative Er-doped fiber amplifier system for a high-repetition-rate optical pulse train is investigated for the first time. A signal pulse train with a wavelength tuning range of 18 nm is produced by a passive mode-locked fiber laser based on a nonlinear polarization rotation technique. In order to realize the amplification, an optical delay-line is used to achieve time match between the pulses' interval and the period of pulse running through the regenerative amplifier. The 16 dB gain is obtained for an input pulse train with a launching power of -30.4 dBm, a center wavelength of 1563.4 nm and a repetition rate of 15.3 MHz. The output properties of signal pulses with different center wavelengths are also discussed. The pulse amplification is found to be different from the regenerative amplification system for CW signals.

Design of 24GHz CMOS Mixer with High Conversion and Low Power (고 변환이득 및 저 전력 24GHz CMOS 믹서 설계)

  • Kim, Shin-Gon;Choi, Seong-Kyu;Kim, Cheol-Hwan;Sung, Myeong-U;Rastegar, Habib;Choi, Geun-Ho;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.780-781
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    • 2014
  • 본 논문에서는 차량 추돌 방지 단거리 레이더용 고 변환이득 및 저전력 24GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 가장 높은 10.96dB의 변환이득, 7.6dBm의 IIP3를 보였고, 가장 적은 5mW의 소비전력 및 $0.2{\times}0.2m^2$의 칩 크기 특성을 보였다.

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