• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.84-92
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• 1998

A program was developed to analyze the electrical characteristics and harmonic distrotion in a two-dimensional silicon BJT. The finite difference equations of the small signal and its second and thired harmonics for basic semiconductor equations are formulated treating the nonlinearity and time dependence with Volterra series and Taylor series. The soluations for three sets of simultaneous equations were obtained sequantially by a decoupled iteration method and each set was solved by a modified Stone's algorithm. Distortion magins and ac parameters such as input impedance and current gains are calculated with frequency and load resistance as parameters. The distortion margin vs. load resistancecurves show cancellation minima when the pahse of output voltage shifts. It is shown that the distortionof small signal characteristics can be reduced by reducing the base width, increasing the emitter stripe length and reducing the collector epitaxial layer doping concentration in the silicon BJT structure. The simulation program called TRADAP can be used for the design and optimization of transistors and circuits as well as for the calculation of small signal and distortion solutions.

• Proceedings of the IEEK Conference
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• 2002.06e
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• pp.231-234
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• 2002

In this paper, we propose an efficient bias circuit for hearing aid using discrete BJT. The collector feedback bias circuit, widely used for the hearing aid, has a resister for negative feedback. As the resistor affects AC and DC simultaneously, it is quite difficult to adjust amplifier gain without changing DC bias point. The previous bias circuit also has weak point to be oscillated by the positive feedback of power noise if gain of hearing aid is high. In the proposed circuit, we can reduce the two weak points of the previous circuit by adding a resistor which is ${\beta}$ times larger than collector resistor between base of BJT and power supply.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.7-12
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• 1984

In this paper, the authors applied the method of hydrogen chloride gettering oxidation to fabricate the low noise bipolar transistor. The results of measurements of the effect of guttering on the variation of flicker noise spectral intensity for variable HCI concentrations indicate that flicker noise in bipolar than-sistor is dependent on the surface condition and that the gettering in a mixture of 2% HCI in oxidation produced the optimal results in the fabrication of the low noise device. In addition, it was also noted that the PSG layer formed by the emitter source (phosphorus) did not have so much guttering effect as in the process with HCl getterinng.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.167-171
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• 2014

This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.137-140
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• 2002

The algorithm for calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.141-144
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• 2002

The method of the analysis of the base Gummel number of the PNP BJT(Bipolar Junction Transistor) for integrated circuits based upon the semiconductor physics is proposed and the method of calculating the doping profile of the base region using process conditions is presented. The transistor saturation current obtained from the proposed method of PNP BJT using 20V and 30V process shows an averaged relative error of 6.7% compared with the measured data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.575-583
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• 2003

In thesis we applied the short or open reflection type for IQ vector modulator The open or short type is operated even exception of other redundancy circuit. Generally IQ vector modulator uses MESFET in performing reflection open or short, then minus voltage which is having complex structure is required to operate MESFET via IQ signal. However BJT can be substituted for MESFET, BJT is improved characteristics like as cutoff frequency, electron mobility and so on. We used BJT in IQ vector modulator which is compatible with TTL level in I,Q digital signal, and attached AGC function. We got the result of operations within ${\pm}$ 1$^{\circ}$ phase and ${\pm}$ 0.6 dB amplitude Variation With full range of 20 dB and Variation of ${\pm}$ 6$^{\circ}$ Phase and ${\pm}$ 0.5 dB amplitude Versus full temperature range.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.15-21
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• 2004

In this paper a new structure of BJT is proposed to improve the saturation voltage characteristics so that it can be used to the low power switching devices. In the case of the conventional finger transistor(FT), the saturation voltage is so high that it dose not satisfy the requirements for the low power device. So the other multi base island transistor(MBIT) is suggested and its saturation voltage is so low in the region of low current that it satisfy the requirement for the low power switching devices, but in region of the high current the saturation voltage tends to increase so that it does not satisfy the requirements for the low power switching devices. So in this paper a new structure of folded back electrode transistor(FBET) is proposed and the characteristics is investigated. When the new structure is applied the emitter area is increased by 35 % so the saturation voltage is reduced by 30 % at the low current region and the contact area is increased by 92 % so the saturation voltage is reduced by totally f % at the high current region with the reduction of 30 % by the increase of the emitter area and the reduction of 7 % by the increase of the emitter contact area.

• Journal of IKEEE
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• v.25 no.4
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• pp.735-740
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• 2021

In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.3 no.2
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• pp.69-74
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• 1989

전력 전자 분야에서 대용량 트렌지스터의 채용은 여러 장점에도 불구하고 무시되어 왔다. 트랜지스터 제작 기술의 어려움으로 여러 개의 트랜지스터를 직, 병렬로 연결하는 방법에 대하여 기술하고 트랜지스터의 직렬 연결시의 문제점을 설명하여 그 해결책을 제시한다.