Browse > Article
http://dx.doi.org/10.4313/JKEM.2014.27.3.167

A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate  

Bang, Jeong-Ju (Department of Electrical Engineering, Inha University)
Huh, Chang-Su (Department of Electrical Engineering, Inha University)
Lee, Jong-Won (Agency for Defence Development)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.3, 2014 , pp. 167-171 More about this Journal
Abstract
This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.
Keywords
Pulse injection; Repetition pulse; Transistor; NPN BJT;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 J. I. Hong, S. M. Hwang, and C. S. Huh, Journal of Electromagnetic Waves and Applications, 23, 571 (2009).   DOI
2 S. M. Han, C. S. Huh, and J. S. Choi, Journal of Electromagnetic Waves and Applications, 23, 1991 (2009).   DOI
3 S. M. Hwang, J. I. Hong, S. M. Han, C. S. Huh, and J. S. Choi, Journal of Electromagnetic Waves and Applications, 24, 1059 (2010).   DOI
4 H. Xie, J. Wang, D. Sun, R. Fan, and Y. Liu, Journal of Electromagnetic Waves and Applications, 23, 2313 (2009).   DOI
5 M. G. Backstrom, 3rd European Survivability Workshop, 16 (2006).
6 M. G. Backstrom, IEEE Transactions on Electromagnetic Compatibility, 46, 396 (2004).   DOI   ScienceOn
7 S. Korte and H. Garbe, Adv. Radio Sci., 4, 10 (2006).
8 J. I. Hong, S. M. Hwang, S. M. Han, and C. S. Huh, The Journal of Korea Institute of Electromagnetic Engineering and Science, 19, 597 (2008).   DOI