• Title/Summary/Keyword: B1 field

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Enhancement of lower critical field of MgB2 thin films through disordered MgB2 overlayer

  • Soon-Gil, Jung;Duong, Pham;Won Nam, Kang;Byung-Hyuk, Jun;Chorong, Kim;Sunmog, Yeo;Tuson, Park
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.4
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    • pp.1-5
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    • 2022
  • We investigate the effect of surface disorder on the lower critical field (Hc1) of MgB2 thin films with a thickness of 850 nm, where the disorder on the surface region is produced by the irradiation of 140 keV Co ions with the dose of 1 × 1014 ions/cm2. The thickness of the damaged region by the irradiation is around 143 nm, corresponding to ~17% of the whole thickness of the film, thereby forming the disordered MgB2 overlayer on the pure MgB2 layer. The magnetic field dependence of magnetization, M(H), for the pristine MgB2 thin film and the film with overlayer is measured at various temperatures, and Hc1 is determined from the difference (△M) between the Meissner line and magnetization signal with the criterion of △M = 10-3 emu. Intriguingly, the film with the disordered overlayer shows a remarkably large Hc1(0) = 108 Oe compared to the Hc1(0) = 84 Oe of pristine film, indicating that the disordered MgB2 overlayer on the pure MgB2 layer serves to prevent the penetration of vortices into the sample. These results provide new ideas for improving the superheating field to design high-performance superconducting radio-frequency cavities.

Leveling-Off of the Resistance at Low Temperatures in Granular In/InO$_x$ Thin Films

  • Kim, Ki-Joon;Lee, Hu-Jong
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.261-261
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    • 1999
  • We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

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NMR Chemical Shift for 4d$^n$ System (Ⅱ). Calculation of the Pseudo Contact Shift for a 4d$^1$ System in a Strong Crystal Field Environment of Octahedral Symmetry

  • Sang-woon Ahn;Se-Woong Oh;Eui-suh Park
    • Bulletin of the Korean Chemical Society
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    • v.4 no.2
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    • pp.64-67
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    • 1983
  • NMR shift arising from the electron orbital angular momentum and the electron spin dipolar-nuclear spin angular momentum interactions has been investigated for a $4d^{1}$ system in a strong crystal field of octahedral symmetry. To examine the NMR shif for a $4d^{1}$ system in a strong crystal field of octahedral symmetry, we derive a general expression for ${\Delta}$B/B using a nonmultipole expansion technique. From this expression all the multipolar terms are determined. For the $4d^{1}$ system in a strong crystal field of octahedral symmetry the exact solution for NMR shift, ${\Delta}$B, is compared with the multipolar results. ${\Delta}$B/B for the $4d^{1}$ system is also compared with that for the $3d^{1}$ system. It is found that the $1/R^{7}$ term contributes dominantly to the NMR shift. However, there is good agreement between the nonmultipole and multipolar results for R-values larger than 0.2 nm for the $4d^{1}$ system but for R-values larger than 0.4 nm for the $3d^{1}$ system.

Measurement Guideline of Fresnel-Field Antenna Measurement Method

  • Oh, Soon-Soo;Moon, Jung-Ick
    • ETRI Journal
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    • v.31 no.1
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    • pp.68-70
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    • 2009
  • In this letter, a parametric analysis of the Fresnel-field antenna measurement method is performed for a square aperture. As a result, the optimum number of Fresnel fields for one far-field point is guided as $M_{opt}=N_{opt}=D^2/{\lambda}R+5$, where D is the antenna diameter, ${\lambda}$ is the wavelength, and R is the distance between the source antenna and the antenna under test. For the aperture size 5 ${\leq}$ $L_x/{\lambda}$ ${\leq}$ 20, the tolerable distances for gain errors of 0.5 dB and 0.2 dB can be guided as $R_{0.5\;dB}$ ${\approx}$ $1.2Lx/{\lambda}$ and $R_{0.2\;dB}$ ${\approx}$ $2.0L_x/{\lambda}$, where $L_x$ is the lateral length of the square aperture. The tolerable distances for 20 ${\leq}$ $L_x/{\lambda}$ ${\leq}$ 200 are also proposed. This measurement guideline can be fully utilized when performing the Fresnel-field antenna measurement method.

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Effect of boron nutrition on American ginseng in field and in nutrient cultures

  • Proctor, John T.A.;Shelp, Barry J.
    • Journal of Ginseng Research
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    • v.38 no.1
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    • pp.73-77
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    • 2014
  • Field and nutrient cultures of American ginseng (Panax quinquefolius L.) were used to establish foliar symptoms related to boron (B) concentration in leaves and soils, and to evaluate radish as a time-saving model system for B nutrition. Application of excess B, 8 kg/ha versus the recommended 1.5 kg/ha, to field plantings of 2-, 3-, and 4-yr-old American ginseng plants just prior to crop emergence caused, within 4 wk after crop emergence, leaf symptoms of chlorosis followed by necrosis starting at the tips and progressing along the margins. The B concentration in leaves of 2-4-yr-old plants receiving 1.5 kg/ha Bwas $30{\mu}g/g$ dry mass compared to $460{\mu}g/g$ dry mass where 8 kg/ha B was applied. Similarly, B concentration in soils receiving the lower B concentration was 1.8 mg/g dry mass and $2.2-2.8{\mu}g/g$ dry mass where the higher B concentration was applied. Application of 8 kg/ha B reduced the dry yield of 3rd-yr roots by 20% from 2745 kg/ha to 2196 kg/ha and 4th-yr roots by 26% from 4130 kg/ha to 3071 kg/ha. Ginseng seedlings and radish were grown under greenhouse conditions in nutrient culture with four B concentrations ranging from 0 mg/L to 10 mg/L. At 5 mg/L and 10 mg/L ginseng and radish developed typical leaf B toxicity symptoms similar to those described above for field-grown plants. Increasing B in the nutrient solution from 0.5 mg/L to 10 mg/L decreased, in a linear fashion, the root and leaf dry mass of ginseng, but not radish. Given the many similarities of ginseng and radish to B utilization, radish might be used as a timesaving model system for the study of B, and other micronutrients, in the slow-growing perennial ginseng.

3-Axial Isotropic Electric-Field Probe Design with Resistor-Loaded Short Dipole (저항 부하된 소형 다이폴을 이용한 3축 등방성 전기장 프로브 설계)

  • Moon, Sung-Won;Jang, Byung-Jun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.3
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    • pp.246-249
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    • 2017
  • In this paper, we designed the 3-axis isotropic electric-field measurement probe using resistor-loaded short dipole with lumped chip resistors. The designed probe shows good isotropic characteristics as well as wideband and low sensitivity. The isotropic characteristics of ${\pm}0.39dB$ from 100 kHz to the 3 GHz band were derived and the reception sensitivity was 0.1 V/m. The frequency response is within 3 dB of the whole section, especially ${\pm}1.3dB$ from 150 kHz to 3 GHz, which is superior to the conventional electric field probe with short dipoles.

Electro-optic Electric Field Sensor Utilizing Ti:LiNbO3 Symmetric Mach-Zehnder Interferometers

  • Jung, Hong-Sik
    • Journal of the Optical Society of Korea
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    • v.16 no.1
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    • pp.47-52
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    • 2012
  • The use of a $Ti:LiNbO_3$ symmetric Mach-Zehnder interferometric intensity modulator with a push-pull lumped electrode and a plate-type probe antenna to measure an electric field strength is described. The modulator has a small device size of $46{\times}7{\times}1mm$ and operates at a wavelength of $1.3{\mu}m$. The output characteristic of the interferometer shows the modulation depth of 100% and 75%, and $V_{\pi}$ voltage of 6.6 V, and 6.6 V at the 200 Hz and 1 KHz, respectively. The minimum detectable electric field is ~1.84 V/m, ~3.28 V/m, and ~11.6 V/m, corresponding to a dynamic range of about ~22 dB, ~17 dB, and ~6 dB at frequencies of 500 KHz, 1 MHz and 5 MHz, respectively.

Design of 8 Channel Insertional pTx Array Coil for 3T Body Imaging (8 채널 삽입형 3T Body pTx Array 코일 설계)

  • Kim, Young Beom;Ryu, Yeunchul
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.4
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    • pp.546-550
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    • 2014
  • In this research, we report all the elements are placed in the space above the patient table as a transmit coil to give optimized B1+ field for the body object. Through the simulations, we compared upper-and-lower parts combined 8 channel Tx array to upper only 8 channel Tx array and showed the utilities of B1+ shimming in multi-channel Tx body imaging at 3T. Half-cylinder shaped upper array shows weak B1+ field area around back of patient without B1+ shimming. After B1+ shimming, highly induced SAR places occurred in the arm region due to the close distance to the both end elements which were driven by very high RF current to enhance B1+ in back area. The proposed upper and lower combined array provides an enhanced homogeneous B1+ field in large ROI imaging as a result of shimming over the body size phantom. Through this research we proved the usefulness of the proposed insertional upper and lower parts combined transmit array for 3T body imaging.

The Radiation Spot Size due to Wiggler Errors in a Free-Electron Laser Oscillator

  • Nam, Soon-Kwon;Park, Y.S.
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1495-1501
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    • 2018
  • We have developed an extended three-dimensional free-electron laser (3D FEL) code with source-dependent expansion to calculate the intensity of the radiation field and the spot size in a free-electron laser oscillator. The effect of the wiggler field errors was evaluated for the case of a planar wiggler generated by a magnet stack with parabolic shaped pole faces by using the extended three-dimensional equations in a free-electron laser oscillator based on the proposed FEL facility which is to be operated in the far-infrared and the infrared regions. The radiation spot size due to the wiggler field errors also have been analyzed for wiggler errors of ${\Delta}B/B=0.0$, 0.03, 0.06 and 0.09% at z = 1 m and z = 2 m. The effect of the diffraction of radiation field due to the wiggler field errors of ${\Delta}B/B=0.0$ and ${\Delta}B/B=0.09%$ at 200 passes was evaluated by using the extended 3D code that we developed. The variation of the curvature of the phase front and the effect of the radiation field intensity due to the wiggler field errors were also evaluated for B = 0.5 T and B = 0.7 T with the wiggler error of ${\Delta}B/B=0.09%$ at 200 passes and the results were compared to those of without errors. The intensity of the radiation, behavior of the radiation spot size and the variation of the curvature of the phase were highly sensitive to the wiggler error of ${\Delta}B/B$ > 0.09%, but were less sensitive to the wiggler errors for ${\Delta}B/B$ < 0.09% in a free-electron laser (FEL) oscillator based on the proposed FEL facility.

Core Losses of Amorphous Fe-B-Si Alloy for Transformer Core (변압기 철심용 Fe-B-Si비정질 합금의 철손 특성)

  • 김기욱;송재성;홍진완;강원구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.40 no.1
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    • pp.67-72
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    • 1991
  • For improving the magnetic properties of the amorphous Fe-B-Si alloy, we annealed the sample in a magnetic field oriented in the plane of the ribbon longitudinal to its long axis. By field annealing, coercive force and total core loss are reduced from 0.04 Oe to 0.02 Oe, and from 0.25 watt/kg to 0.15 watt/kg respectively in comparsion with non-field annealed specimen. These reductions were caused by the formation of 180 dcmain wall parallel to the annealing field due to the induced anisotropy.