• Title/Summary/Keyword: B-doping

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Tc and Jc distribution in in situ processed MgB2 bulk superconductors with/without C doping

  • Kim, C.J.;Kim, Y.J.;Lim, C.Y.;Jun, B.H.;Park, S.D.;Choo, K.N.
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.2
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    • pp.36-41
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    • 2014
  • Temperature dependence of magnetic moment (m-T) and the magnetization (M-H) at 5 K and 20 K of the in situ processed $MgB_2$ bulk pellets with/without carbon (C) doping were examined. The superconducting critical temperature ($T_c$), the superconducting transition width (${\delta}T$) and the critical current density ($J_c$) were estimated for ten test samples taken from the $MgB_2$ bulk pellets. The reliable m-T characteristics associated with the uniform $MgB_2$ formation were obtained for both $MgB_2$ pellets. The $T_cs$ and ${\delta}Ts$ of all test samples of the undoped $MgB_2$ were the same each other as 37.5 K and 1.5 K, respectively. The $T_cs$ and ${\delta}Ts$ of the C-doped $MgB_2$ were 36.5 K and 2.5 K, respectively. Unlike the m-T characteristics, there existed the difference among the M-H curves of the test samples, which might be caused by the microstructure variation. In spite of the slight $T_c$ decrease, the C doping was effective in enhancing the $J_c$ at 5 K.

Properties of the Amorphous Silicon Microbolometer using PECVD (PECVD 이용한 비정질 실리콘형 마이크로 볼로미터 특성)

  • Kang, Tai Young;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.4
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    • pp.19-23
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    • 2012
  • We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

The Effective $P_2O_5$ Doping into $B_2O_3-P_2O_5-SiO_2$ Silica Layer Fabrication by Flame Hydrolysis Deposition (FHD법에 의한 $B_2O_3-P_2O_5-SiO_2$ 실리카막의 효과적인 $P_2O_5$ 도핑)

  • 심재기;이윤학;성희경;최태구
    • Journal of the Korean Ceramic Society
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    • v.35 no.4
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    • pp.364-370
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    • 1998
  • Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

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CHARACTERISTICS OF THE HETEROEPITAXIAL Si1-xGex FILMS GROWN BY RTCVD METHOD

  • Chung, W.J.;Kwon, Y.K.;Bae, Y.H.;Kim, K.I.;Kang, B.K.;Sohn, B.K.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.84-89
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    • 1995
  • The growth and the film characteristics of heteroepitaxial $Si_{1-x}Ge_x$ films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of $Si_{1-x}Ge_x$ heteroepitaxial layers, $SiH_4/GeH_4/H_2$gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as $650^{\circ}C$, and the composition ratios change linearly with $SiH_4/GeT_$$ gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm $B_2H_6$ source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200$\AA$/decade.

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The Piezoelectic and electromechanical Characteristics of PZ-PT-PMWS (PZ-PT-PMWS의 압전 및 전기기계적 특성)

  • 홍종국;이종섭;채홍인;윤만순;정수현;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.403-406
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    • 2000
  • The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

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Effects of Sr Contents on Structural Change and Electrical Conductivity in Cu-doped LSM ($La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$)

  • Ryu, Ji-Seung;No, Tae-Min;Kim, Jin-Seong;Jeong, Cheol-Won;Lee, Hui-Su
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.33.1-33.1
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    • 2011
  • Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

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Quantitative and Pattern Recognition Analyses for the Quality Evaluationof Herba Epimedii by HPLC

  • Nurul Islam, M.;Lee, Sang-Kyu;Jeong, Seo-Young;Kim, Dong-Hyun;Jin, Chang-Bae;Yoo, Hye-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.1
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    • pp.137-144
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    • 2009
  • In this study, quantitative and pattern recognition analyses for the quality evaluation of Herba Epimedii using HPLC was developed. For quantitative analysis, five major bioactive constituents, hyperin, epimedin A, epimedin B, epimedin C, and icariin were determined. Analysis was carried out on Capcell pak $C_{18}$ column ($250{\time}4.6$ mm, 5 ${\mu}m$) with a mobile phase of mixture of acetonitrile and 0.1% formic acid, using UV detection at 270 nm. The linear behavior was observed over the investigated concentration range (2-50 ${\mu}g/mL;\;r_2\;>$ 0.99) for all analytes. The intraand inter-day precisions were lower than 4.3% (as a relative standard deviation, RSD) and accuracies between 95.1% and 104.4%. The HPLC analytical method for pattern recognition analysis was validated by repeated analysis of one reference sample. The RSD of intra- and inter-day variation of relative retention time (RRT) and relative peak area (RPA) of the 12 selected common peaks were below 0.8% and 4.7%, respectively. The developed methods were applied to analysis of twenty Herba Epimedii extract samples. Contents of hyperin, epimedin A, epimedin B, epimedin C, and icariin were calculated to be 0$\sim$0.79, 0.69$\sim$1.91, 0.93$\sim$9.58, 0.65$\sim$3.05, and 2.43$\sim$11.8 mg/g dried plant. Principal component analysis (PCA) showed that most samples were clustered together with the reference samples but several apart from the main cluster in the PC score plot, indicating differences in overall chemical composition between two clusters. The present study suggests that quantitative determination of marker compounds combined with pattern-recognition method can provide a comprehensive approach for the quality assessment of herbal medicines.

Effect of Calcium Doping in Low Angle Grain Boundaries of $YBa_2Cu_3O_{7-\delta}$ on Textured Metal Substrates

  • Kang, B.W.;A. Goyal;F.A. List;D.K. Christen;H. R. Kerchner;S. Sathyamurthy;Lee, D.F.;Martin, P.M.;Koreger, D.M.
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.10-13
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    • 2002
  • We report the effect of Ca doping in $YBa_2Cu_3O_{7-\delta}$ (YBCO) thin films grown on the Rolling- Assisted, Biaxially Textured Substrates (RABiTS) with the architecture of $CeO_2/YSZ/CeO_2/Ni$. Critical currents of bilayer and trilayer structures of $YBCO/Y_{0.7}Ca_{0.3}Ba_2Cu_3O_{7-\delta}$/(YCaBCO) as well as undoped YBCO for comparison have been measured in a wide range of temperatures and fields. For $6-8^{\circ}$ grain boundaries, 30% Ca-doping in bilayer structure enhances $J_c$ as high as 35%. The enhancement is larger at low temperatures and at magnetic fields. On the other hand, 30% Ca-doping in trilayer structure reduces $J_c$ as high as 60%. Combined with slightly lower $T_c$, this indicates that Ca is overdoped in this structure and degrades GBs.

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