• 한국자기공명학회논문지
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• 제3권2호
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• pp.90-99
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• 1999

Doping of boron atoms in graphite has been well known method to increase the discharge capacity as the negative electrode material for lithium secondary battery. Herein, the boron-doped graphites are prepared by mixing 1, 2.5, 5, and 7 wt. % of boron carbide in carbon during the graphitizing process. The structural states of boron in boron-doped graphites are investigated by solid-state 11B NMR spectroscopy. The resonance lines for substitutional boron atoms are identified as the second order quadrupolar powder pattern with the quardrupole coupling constant, QCC = 3.36(2) MHz. The quantitative analysis of 11B NMR spectra with boron-doped graphite has also been performed via simulation.

• Carbon letters
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• 제11권2호
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• pp.127-130
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• 2010

Boron doped fullerene $C_{60}$ ($B:C_{60}$) films were prepared by the thermal evaporation of $C_{60}$ powder using argon plasma treatment. The morphology and structural characteristics of the thin films were investigated by scanning electron microscope (SEM), Fourier transform infra-red spectroscopy (FTIR) and x-ray photo electron spectroscopy (XPS). The electrochemical application of the boron doped fullerene film as a coating layer for silicon anodes in lithium ion batteries was also investigated. Cyclic voltammetry (CV) measurements were applied to the $B:C_{60}$ coated silicon electrodes at a scan rate of $0.05\;mVs^{-1}$. The CV results show that the $B:C_{60}$ coating layer act as a passivation layer with respect to the insertion and extraction of lithium ions into the silicon film electrode.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.53-53
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• 2009

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.54-54
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• 2009

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1573-1576
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• 1997

Thin films of $BaTiO_3$ system were prepared by radio frequency (rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat - treatment temperatures. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films shows that the specimen heat treated in between 900 and 1100[$^{\circ}C$] shows a grain growth. At 1100[$^{\circ}C$], the specimen stops grain-growing and becomes a crystal. A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn.

• 전자공학회논문지A
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• 제28A권9호
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• pp.729-735
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• 1991

To form shallow $p^+$ -n junctions, Ge and As ions were employed for preamorphization, and B or BF2 was implanted for doping. Same B and BF$_2$ implantations were performed into single crystalline silicon to compare the material and electrical characteristics with the preamorphized samples. SIMS measurements for 10KeV B implanted samples revealed the somilar boron distribution for two preamophized cases, but the ASR profiles indicated that the shallower junctions could be formed by Ge preamorphzation. Sheet resostance of Ge preamorphized sample was lower than the As preamorphized sample, and the diode leakage current characteristics were similar for the preamorphized and non-preamorphized samples. Among the samples implanted with BF ions into the substrates preamorphized with 25keV Ge or As ions, high sheet resistance and leaky diode characteristics were observed for the As preamorphized samples. It was found that Ge preamorphization is more useful than As preamorphization for the purpose of forming shallow $p^+$ -n junctions using low energy BF$_2$ implantation.

• EDISON SW 활용 경진대회 논문집
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• 제2회(2013년)
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• pp.273-277
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.437-447
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• 2018

Visible-light-driven wide bandgap semiconductor photocatalysts were commonly developed via doping or coupling with another narrow bandgap metal oxide. However, these approaches required extra processing. The aim of study was to evaluate the photocatalytic performance of narrow bandgap $WO_x$ nanoparticles. A mixture of $WO_2$ and $WO_3$ nanoparticles were synthesized using solution precipitation technique. The photodegradation of RhB by these nanoparticles more effective in UV light than in visible light. In antibacterial susceptibility assay, $WO_x$ nanoparticles demonstrated good antibacterial against Gram-positive bacteria. The cell wall of bacterial was the main determinant in antibacterial effect other than $W^{4+}/W^{6+}$ ions and ROS.

• Progress in Superconductivity
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• 제10권1호
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• 한국재료학회지
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• 제15권2호
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• pp.89-92
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• 2005

The induction melting was employed to prepare Nb-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by induction melting and subsequent annealing at $400^{\circ}C$ for 2 hrs in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed conduction behavior. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with increasing the amount of Nb doping, mainly originated from the high Seebeck coefficient around mixed conduction temperature and high electrical conductivity.