• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.39-39
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• 2009

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.286-288
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• 2014

This study deals with the catalyst free radio frequency plasma assisted polymerization of ethylene glycol using nitrogen as reactive gas to modify the surface chemistry and morphology. The deposited film was characterized through various analysis techniques i.e. surface profilometry, Forier transform infrared spectroscopy, water contact angle and UV-visible spectroscopy to analyze film thickness, chemical structure, surface energy and optical properties respectively. The surface topography was analyzed by Atomic force microscopy. It was observed that the ethylene oxide behaviour and optical transmittance of the film were reduced with the introduction of nitrogen gas due to higher fragmentation of monomer. However the hydrophilic behavior of the film improved due to formation of new water loving functional groups suitable for biomedical applications.

• 한국초전도ㆍ저온공학회논문지
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• 제17권2호
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• pp.1-17
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• 2015

$MgB_2$ thin films with superior superconducting properties are very promising for superconducting magnets, electronic devices and coated conductor electric power applications. A clear understanding of flux pinning mechanism in $MgB_2$ films could be a big aid in improving the performance of $MgB_2$ by the enhancement of $J_c$. The fabrication advancement and the understanding of flux pinning mechanism of $MgB_2$ thin and thick films fabricated by using hybrid physical-chemical vapor deposition (HPCVD) are reviewed. The distinct kind of $MgB_2$ films, such as single-crystal like $MgB_2$ thin films, $MgB_2$ epitaxial columnar thick films, and a-axis-oriented $MgB_2$ films are included for flux pinning mechanism investigation. Various attempts made by researchers to improve further the flux pinning property and $J_c$ performance by means of doping in $MgB_2$ thin films by using HPCVD are also summarized.

• 한국세라믹학회지
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• 제37권5호
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• pp.491-496
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• 2000

Single phae Pb(Mg1/3Nb2/3)O3-based solid solutions, the Mg2+ of which are replaced by 20mol% of Ni2+, Zn2+, Cd2+, and the Pb2+ of which are replaced by 0∼20 mol% of La3+, were synthesized and their ordering structures of B-site cations were investigated by XRD and TEM. The B'-site cations (Mg2+, Ni2+, Zn2+, Cd2+) are disordered while these B'-site cations and the B"-site cations (Nb5+) are nonstoichiometrically 1:1 ordered within the ordered nano-domains dispersed in the Nb5+-rich disordered matrix. The charge imbalance between the B'-rich ordered nano-domains and the B"-rich disordered matrix are compensated by the doping of electron donor such as La3+, which enhances the degree of nonstoichiometric 1:1 ordering. For a given La3+ content, the degree of nonstoichiometric 1:1 ordering increases as the average ionic size difference between the B'-and B"-site cations increases, Ni2+

• 한국전자파학회논문지
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• 제12권2호
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• pp.293-298
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• 2001

Polyaniline(EB)/NMP 용액에 carbonblack, grahpite Ag를 첨가하여 우수한 막질의 free standing film을 제조하였다. 1 mole HCI로 도핑된 polyaniline(ES) free standing film($\sigma$=5 S/cm, t=0.14 mm)을 제조하여 10 MHz~1 GHz의 주파수 영역에서 전자기파 차폐효과를 측정한 결과 23~25 dB의 차폐효율을 나타내었으며, carbonblack, grahpite, AG을 첨가하여 제조한 ES free standing film 과 camphorsulfonic acid(CSA)를 도핑한 polyaniline film의 전자기파 차폐효율 측정결과 각각 30~34dB, 36~42dB, 44~52dB, 34~43dB로 ES free standing film 보다 우수한 특성을 나타내었다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.346-350
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• 2002

The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• 한국재료학회지
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• 제5권5호
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• 청정기술
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• 제27권2호
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• pp.146-151
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• 2021

순수한 BiVO₄ 및 Sm 이온이 도핑된 BiVO₄ 촉매들을 수열합성법으로 제조하였고, 그들의 물리적 성질을 XRD, DRS, SEM 및 PL 등을 사용하여 특성분석을 하였다. 또한, 가시광 조사 하에서 로다민 B의 분해반응에서 광촉매로서의 활성을 조사하였다. Sm 이온의 첨가는 낮은 온도에서도 촉매의 결정구조를 ms-BiVO₄ 구조에서 tz-BiVO₄로 변화시켰다. 흡광도 분석결과로 부터 모든 촉매들은 Sm 이온의 도핑과 관련없이 가시광 영역에서 흡수스펙트럼을 보여주고 있다. 또한 순수한 BiVO₄ 촉매는 무정형의 형상을 보여주고 있으나 Sm 이온이 첨가되면 그 입자들의 형상이 타원형으로 변화하였으며 입자의 크기가 줄어 들었다. 로다민 B의 광분해 반응에서 순수한 BiVO₄ 촉매에 비해 Sm 이온이 첨가된 촉매들의 광분해 활성이 증가하였다. 또한, 3%로 도핑된 Sm3-BVO 촉매가 가장 높은 활성을 보일 뿐만 아니라 가장 높은 수산기 라디칼의 생성속도와 가장 큰 PL피크 세기를 나타내었다. 이 결과는 촉매와 물의 계면에서 얻어지는 수산기 라디칼(•OH)의 생성속도는 광촉매 활성과 밀접한 연관성이 있다는 것을 의미한다.

• 대한전자공학회논문지
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• 제5권3호
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• pp.1-8
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• 1968

이 열전발전기는 Bi계화합물 반도체 Sb2Te3 및 소량의 불순물을 함유한 ZnSb를 사용하여 실험한 것으로 열기전력 α, 비저항ρ, 열전도율k 및 고온부의 온도차를 측정하였다. 특성은 다른 재료를 사용한 열전발전기보다 Sb2Te3+Bi2Se3와 Bi3Te2+Sb2Te3를 소자로 사용한 경우 효율이 우수하였으며 이의 효율은 1.42%였다.