Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Deposition of B-doped ZnO Thin Films by Plasma Enhanced Chemical Vapor Deposition

플라즈마 화학기상 증착법에 의한 B이 첨가된 ZnO 박막의 증착에 관한 연구

  • Choe, Jun-Yeong (Samsung Corninng Co) ;
  • Jo, Hae-Seok (Dept.of Inorganic Materials Engineering,Seoul National University) ;
  • Kim, Yeong-Jin (Dept.of Matersials Science and engiveerisng, Kyonggi University) ;
  • Lee, Yong-Ui (Dept.of Inorganic Materials Engineering,Seoul National University) ;
  • Kim, Hyeon-Jun (Dept.of Inorganic Materials Engineering,Seoul National University)
  • 최준영 (삼성코닝주식회사) ;
  • 조해석 (서울대학교 무기재료공학과) ;
  • 김영진 (경기대학교 재료공학과) ;
  • 이용의 (서울대학교 무기재료공학과) ;
  • 김현준 (서울대학교 무기재료공학과)
  • Published : 1995.08.01
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Abstract

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

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