• Title/Summary/Keyword: B-SiC

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3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

  • Ko, Min-Su;Kim, Du-Ho;Rucker, Holger;Choi, Woo-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.256-261
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    • 2011
  • We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in $0.25-{\mu}m$ SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down-conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.

Formation of the Shallow $p^+$ -n Junction by As-Preamorphization Method and Characterization (비소 비정질화 방법에 의한 얕은 $p^+$-n 접합의 형성과 특성분석)

  • Sang Jik Kwon
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.11
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    • pp.113-121
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    • 1993
  • In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

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Aging of Amorphous Fe-B-Si Wound Cores (Fe-B-Si 비정질 권철심의 경년 열화 연구)

  • 민복기;송재성;강영호;강원구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.3
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    • pp.432-436
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    • 1994
  • The aging characteristics of amorphous FeS178TBS113TSiS19T wound cores have been investigated as a function of aging temperature and time. The core losses(1.2T/60Hz) of amorphous wound cores dipped in transformer oil decrease in comparision with initial stage of aging test due to insulation of ribbon stacks by oil penetration. It is estimated that it takes 30 years or more for 10% increase in core losses (1.2T/60Hz) of amorphous wound cores aged at normal transformer running temperature(100$^{\circ}C$). So we condlude that the amorphous core is satisfactorily applicable to transformer.

Inter-grain Exchange Interactions for Nanocrystalline Nd2.33Fe14B1.06Si0.21 Magnets

  • Jin, Han-Min;Yan, Yu;Wang, Xuefeng;Su, Feng
    • Journal of Magnetics
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    • v.8 no.4
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    • pp.157-159
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    • 2003
  • The strengths of the inter-grain exchange interaction were evaluated for nanocrystalline $Nd_{2.33}Fe_{14}B_{1.06}Si_{0.21}$ magnets of different grain size by comparing the $_{i}H_{c}$ calculated by micromagnetics with the experiments. With increase of the grain boundary thickness to that of the magnet of grain diameter 12.4, 24.8, 37.2 and 49.6 nm, the strengh of the interaction in reference to that without the grain boundary phase decreases to 83%, 69%, 54% and 42%.

A Study on Parallel Interconnection between Photodiodes and Fibers using Si V-groove (Si V-groove를 이용한 광다이오드(PD)와 광섬유의 병렬연결에 관한 연구)

  • Lee, W.;You, B.A.;Kim, S.C.;Lee, B.H.
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.439-441
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    • 1996
  • A simple coupling method between APD(avalanche photodiode) arrays and SMF(single mode fiber) arrays on a Silicon carrier composed of V-grooves is proposed and carried out. Jacketed fibers embedded in V-grooves are used as alignment marks instead of patterned pedestals or solder bumps and a optical receiver module are packaged.

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