• Journal of Magnetics
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• v.4 no.1
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• pp.5-9
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• 1999

Effect of sulfur segregation on tertiary recrystallization and magnetic induction during final annealing was investigated in a 3% Si-Fe electrical strip containing 6 ppm(LS) and 15 ppm(HS) sulfur. During final annealing, Auger peak height of segregated sulfur on the surface of the strips reached a maximum, and then decreased to low level with increasing annealing time, which is attributed to sulfur segregation and evaporation. The magnetic induction of the thin-gauged 3% Si strip was inversely proportional to the Auger peak height of segregated sulfur on the surface. The overall profile for surface segregation of sulfur and B10 was observed, irrespective of sulfur content in Si-Fe strips, but the peaks of LS strips appeared earlier than those of HS strips. The grain growth rate of the LS strips during final annealing was faster than that of the HS strips, which may be attributed to the pinning effects of segregated sulfur. With increasing final annealing temperature, B10 value increased rapidly and the saturation level in B10 increased.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.1
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• pp.145-156
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• 1990

In this study, thermophysical properties of the engineering ceramic materials such as $Al_{2}$O$_{3}$, Si$_{3}$N$_{4}$ and SiC were measured b y a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature ranging form room temperature to 1300K. The measured thermal properties of one group of ceramic material were compared with those of other group and discussed in detail in connection with the chemical composition. Thus, some criteria for thermal design with the engineering ceramic materials were proposed.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1189-1196
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• 2003

Ferroelectric B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) solution was synthesized by sol-gel process. BLT thin films were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. In this experiments, Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, and Ti(IV) i-propoxide were used as starting materials, which were dissolved in 2-Methoxyethanol. Rapid Thermal Annealing (RTA) was used to promote crystallization of BLT thin films. The thin films with RTA process were compared with those with non-RTA process on electrical properties. After RTA process, the remanent polarization value (2Pr) of BLT thin films annealed at 72$0^{\circ}C$ was 20.46 $\mu$C/$\textrm{cm}^2$ which was approximately 27% higher than that of non-RTA process at 5 V.

• Journal of Magnetics
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• v.18 no.4
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• pp.395-399
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• 2013

The metallic glass ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) were obtained by melt spinning with 25-30 ${\mu}m$ thickness. The thermal stability, mechanical properties and magnetic properties of Fe-Co-B-Si based systems were investigated. The values of thermal stability were measured using differential scanning calorimetry (DSC), including glass transition temperature ($T_g$), crystallization temperature ($T_x$) and supercooled liquid region (${\Delta}T_x=T_x-T_g$). These amorphous ribbons were identified as fully amorphous, using X-ray diffraction (XRD). The mechanical properties of Febased samples were measured by nano-indentation. Magnetic properties of the amorphous ribbons were measured by a vibrating sample magnetometer (VSM). The amorphous ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) exhibited soft magnetic properties with low coercive force ($H_c$) and high saturation magnetization (Ms).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.12
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• pp.2909-2916
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• 2000

6.5wt% Si steel is widely known as an excellent magnetic material because its magnetostriction is nearly zero. The AX magnetic properties as magnetostriction of 6.5% Si steel were evaluated and compared with those of conventional 3% Si steel sheet. In this paper, the fracture behavior of the poly crystals and single crystals of Fe-6.5wt%Si alloy has been observed. Single crystals were prepared by Floating Zone(FZ) method, which melts the alloy by the use of high temperature electron beam in pure argon gas condition. And the single crystals were annealed at 500$^{\circ}C$ and 700$^{\circ}C$ respectively and tensile tested at room temperature. According to the result, B2 phase has more good elongation than DO$_3$ phase. It was also found that the fracture surfaces of the single crystals have hairline facets in same direction, and the facets change the direction according to the single crystal phase.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.126-132
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• 2009

We have studied physical properties of MnAs thin films grown by Molecular-Beam Epitaxy as well as their post-growth annealing effects. The samples grown at $600^{\circ}C$ show the preferred crystal orientation of type-B independent of substrate whereas type-A is observed for the samples grown at below $200^{\circ}C$. The sample grown at $600^{\circ}C$ on GaAs(001) substrate is magnetized to only one direction even on the easy axis of magnetization. The magnetic properties are vastly enhanced after post-growth annealing for both MnAs/Si(001) sample with no ferromagnetism and ferromagnetic MnAs/GaAs(001) grown at $200^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.198-199
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• 2005

• Korean Journal of Environmental Biology
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• v.24 no.3
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• pp.294-299
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• 2006

Mt. Seokseong is located $37^{\circ}15'15'{\sim}37^{\circ}17'00'N$ in latitude at $127^{\circ}09'30'{\sim}127^{\circ}11'00'E$ in longitude in Yongin-si. As the result of cluster analysis, B site has 170 taxa of vascular plants, so it is the most abundant site in this area. And C site has 140 taxa of that, it is secondly abundant. But it has the highest similarity index (53.7%) between A site and B site. To construct natural resort for residents, it needed make thorned park just as hiking course, woods bathing site, aquatic place, pebble path, and natural garden path. And to protect ecological isolation of this area ecobridges must be constructed at Myeokjogogae and at Yongin Medical Hospital.