• Korean Journal of Materials Research
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• v.12 no.5
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.220-222
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• 1992

• Journal of the Korean Electrochemical Society
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• v.27 no.2
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• pp.73-79
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• 2024

As the use of fossil fuels has gradually increased, so has the emission of greenhouse gases such as carbon dioxide, leading to environmental problems. As a result, lithium-ion batteries (LiB) have emerged as the solution to this issue. To manufacture medium to large-sized lithium-ion batteries (LiB), it requires electrodes with high capacity and fast charging capabilities. Silicon (Si) is considered a next-generation anode with high-capacity properties, so, reduced graphene oxide (rGO) was compounded with Si@resorcinol-formaldehyde resin (RF) composite to prevent the volume expansion of Si. It was confirmed that the composite anode prepared exhibited improved capacity and enhanced stability.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.465-468
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• 2004

In this paper, we describe the design and implementation of the new current-current negative feedback (CCNF) voltage-controlled oscillator (VCO), which suppresses 1/f induced low-frequency noise. By means of the CCNF, the high-frequency noise as well as the low-frequency noise is prevented from being converted into phase noise. The proposed CCNF VCO shows 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed VCO is -87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of -12.0 dBm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.121-121
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• 2000

반도체 산업의 발달에 따라 소자의 보다 빠른 동작 속도와 큰 집적도를 갖은 ULSI 구조를 얻기 위해, 새로운 금속배선 재료가 요구되고 있다. 기존의 금속 배선인 Al 및 Al 합금은 비교적 낮은 비저항과 박막형성의 용이함으로 인하여 현재까지 금속배선 재료로 사용되고 있으나, 고집적화에 따라 RC Time Delay와 Electromigration의 문제점을 들어내었다. 이러한 문제를 해결할 새로운 배선 재료로 Al보다 낮은 비저항을 가지며, electromigration 저항성을 갖는 Cu 금속배선 재료가 활발히 연구되고 있다. 본 실험에서는 (100) Si 웨이퍼를 기판으로 사용하였으며, 각층은 SiO2/Si3N4/EP Cu/Seed Cu/ TaN/SiO2/Si wafer 상태로 증착하였다. 확산방지막으로 TaN을 사용하였고, seed Cu는 sputtering 으로 증착하였으며, seed Cu 만으로 된 박막과 seed Cu + electro plating Cu로 구성된 박막을 제작하였다. 제작 완료된 박막은 N2 분위기에서 20$0^{\circ}C$ 120 min, 45$0^{\circ}C$ 60min 동안 열처리하여 Cu 박막의 조직 변화를 TEM 및 여러 분석방법을 이용하여 분석하였다. Plan-view TEM결과, 45$0^{\circ}C$, 60min 열처리함에 따라 결정립 성장이 일어난 것을 확인 할 수 있었다. 그러나, 성장후에도 twin boundary, stacking fault, dislocation, small defect 등은 여전히 남아 있음이 관찰된다. 그림 1(a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.

• Journal of Ceramic Processing Research
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• v.22 no.5
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• pp.568-575
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• 2021

Glass-ceramic glazes were prepared using a CaO-MgO-Al2O3-SiO2 system and were used to fabricate low-temperature firing,high-hardness glazes in ceramic tiles. Additives (B2O3) and a nucleating agent (TiO2) were added to the glaze, and crystallineglazes were obtained by sintering at 1000 ~ 1100 oC for 30 or 60 min. X-ray diffraction analysis of the glazes suggested thatcordierite (Mg2Al4Si5O18) and anorthite (CaAl2Si2O8) crystal phases were present, and the peak intensity of the cordieritecrystal phase increased with increasing sintering temperature. All samples showed high crystallinities of 70% or more,irrespective of sintering temperature or time. The glaze density increased with increasing sintering temperature and decreasedat 1100 oC. The Vickers hardness test results of the glazes indicated high hardness values of 6.79 and 6.77 GPa after 30 minheat treatment at 1000 oC and 60 min at 1050 oC, respectively. Glass-ceramic glaze with high hardness at low temperature wasfabricated through crystallization of glaze for tiles.

• Journal of Power System Engineering
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• v.15 no.6
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• pp.67-72
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• 2011

In the present study, crack healing effect and residual stress of $Al_2O_3$ ceramics were investigated by changing the sintering temperature and heat treatment conditions. And also it was investigated that the influence of different filler loadings of nano-sized SiC particles on the crack healing behavior of $Al_2O_3$ ceramics. The test samples were characterized by three point bend flexural tests to evaluate their mechanical properties. The morphological changes were studied by FE-SEM and EDS. The test results indicated that the $Al_2O_3$ with nano-sized SiC ceramics sintered at $1800^{\circ}C$ were showed highest density. Sintering temperature at $1800^{\circ}C$, the bending strength of heat treatment in air atmosphere specimens showed about 42 % increment in comparison to the un-heat treated specimens. The cracked specimens can be healed by heat treatment in vacuum atmosphere but the crack healing effect of $Al_2O_3$ ceramics, which is heat treated in air atmosphere was higher than that of heat treated in vacuum atmosphere. $Al_2O_3$ with 30 wt% of SiC ceramics indicated higher crack healing ability than that with 15 wt% of SiC ceramics. The FE-SEM images showed that the median cracks and pores were disappeared after heat treatment in air.