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http://dx.doi.org/10.3740/MRSK.2002.12.5.347

Behavior of Ag+ and Sn2+ After Reaction Between the Transparent Dielectric PbO-B2O3-SiO2-Al2O3 and Ag Electrodes  

Hong, Gyeong-Jun (경북대학교 공과대학 금속공학과)
Park, Jun-Hyeon (순천대학교 공과대학 재료·금속공학과)
Heo, Jeung-Su (경북대학교 공과대학 금속공학과)
Kim, Hyeong-Jun (순천대학교 공과대학 재료·금속공학과)
Publication Information
Korean Journal of Materials Research / v.12, no.5, 2002 , pp. 347-352 More about this Journal
Abstract
A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.
Keywords
$PbO-{B_2}{O_3}-{SiO_2}-{Al_2}{O_3}$system; plasma display panel; transparent dielectric layer; Ag and ITO electrode; yellow phenomenon;
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