• Title/Summary/Keyword: B-$TiO_2$

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Studies on Preparation of Boron Compounds from Colemanite Ore : Preparation of Boric Acid and Reaction Mechanism (I) (Colemanite 광물로부터 붕소화합물의 제조에 관한 연구 : 붕산제조 및 반응기구 (I))

  • Choi, Byung-Hyun;Lim, Hyung-Mi;Jee, Mi-Jung;Jang, Jae-Hun;Paik, Song-Hoo;Lee, Mi-Jai
    • Journal of the Korean Ceramic Society
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    • v.41 no.10 s.269
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    • pp.756-765
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    • 2004
  • We present extraction process and reaction mechanism of boric acid from one of calcium borate ores, colemanite by reaction with sulfuric acid. Colemanite has been fully decomposed under pH 5 with sufficiency amount of sulfuric acid, more than the amount stoichiometrically required. Calcium sulfate was separated out, leaving boron in the liquid phase after sulfuric acid addition. The extraction process of boric acid was affected by dissolution temperature and time, amount of sulfuric acid and ammonium sulfate, pH and a degree of concentration before recrystallization. The $SiO_2$ of the impurities which colemanite contains was insoluble so that it was separated out with calcium sulfate from liquid phase. The species of $CaO,\;Al_2O_3,\;Fe_2O_3,\;MgO$ were remained in a liquid phase after reaction with sulfuric acid. These impurities were separated out by addition of ammonia to the liquid phase, funhermore, boric acid was produced by process of pH adjustments and acidification, concentration, and recrystallization.

The characteristics of bismuth magnesium niobate multi layers deposited by sputtering at room temperature for appling to embedded capacitor (임베디드 커패시터로의 응용을 위해 상온에서 RF 스퍼터링법에 의한 증착된 bismuth magnesium niobate 다층 박막의 특성평가)

  • Ahn, Jun-Ku;Cho, Hyun-Jin;Ryu, Taek-Hee;Park, Kyung-Woo;Cuong, Nguyen Duy;Hur, Sung-Gi;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.62-62
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    • 2008
  • As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

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Electric Field Strength and Compressive Stress Effects on the Displacement of Multilayered Ceramic Actuators (적층형 세라믹 압전 액추에이터의 전계강도와 압축응력에 따른 변위특성 해석)

  • Song, Jae-Sung;Jeong, Soon-Jong;Kim, In-Sung;Min, Bok-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.248-252
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    • 2005
  • The effects of electric field strength and mechanical compressive stress on the displacement of multilayered ceramic actuator, stacked alternatively 0.2 (PbM $n_{1}$3/N $b_{2}$3/ $O_3$)-0.8(PbZ $r_{0.475}$ $Ti_{0.525}$ $O_3$) ceramic thin films and 70Ag-30Pd electrodes were investigated. Because the actuators were designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. so the polarization and strain were affected by the amount of 180$^{\circ}$domain, electric field strength and mechanical compressive stress. Consequently, the change of polarization, displacement with respect to field strength, and mechanical compressive stress were likely to be caused by readiness of the domain wall movement around the ceramic-electrode interfaces.ces.

Ferroelectric Properties of PZT Thin Films by RF-Magnetron sputtering (RF 마그네트론 스퍼터링 법을 이용한 PZT 박막의 강유전 특성)

  • Park, Young;Joo, Pil-Yeoun;Yi, Ju-Sin;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.341-344
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    • 1999
  • The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

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Prototype Phase Array Antenna using Ferroelectric Phase Shifter (강유전체 위상변위기를 이용한 위상배열 안테나)

  • Moon, Seung-Eon;Ryu, Han-Cheol;Kwak, Min-Hwan;Kim, Young-Tae;Lee, Sang-Seok;Lee, Su-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.127-130
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    • 2003
  • 4-bit 강유전체 위상변위기를 이용하여 10 GHz, 상온에서 작동하는 위상배열 안테나를 설계 및 제작하였다. 이 안테나는 빔 스캔을 위하여 전압에 대한 비선형특성을 보이는 강유전체 Bal-xSrxTiO3 (BST)를 기본으로 하는 위상변위기를 이용하였다. 우리는 펄스레이져 증착법으로 MgO (001) 기판위에 걸맞게 증착된 BST 박막을 일반적인 사진공정과 식각법을 이용하여 동일평판형 전극을 가진 위상변위기를 만들었다. 일반적인 동일평판형 강유전체 위상변위기의 경우 연결 전송선로의 임피던스와의 차이로 인해 반사손실과 이로 인한 부가적인 삽입손실이 발생한다. 이런 손실들을 줄이기 위해 입력과 출력 포트에 임피던스 매칭을 하였다. 이렇게 테이퍼링되어 만들어진 동일평판형 위상변위기는 이전의 구조에 비해 반사 손실과 삽입 손실 값에서 각각 약 10, 2 dB 정도씩의 개선을 보였다. 이 구조로 전송선로의 길이를 길게하여 만든 1-bit 강유전체 위상변위기는 10 GHz, 150 V의 전압변화에서 180도의 차등위상변위를 보였으며 최대 삽입손실과 최대 반사손실은 각각 약 10 dB, 20 dB 이다. 안테나 모듈은 4개의 마이크로스트림 패치 안테나와 4개의 강유전체 위상변위기로 이루어졌는데 10 GHz, 150 V의 전압변화에서 약 15도의 빔 스캔을 확인하였다.

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Study on Angular Rate Sensor using Sol-Gel PZT thin film (Sol-gel 압전체 박막을 이용한 각속도 센서에 대한 연구)

  • Lee, S. H.;R. Meada;M. Esashi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.34-34
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    • 2003
  • Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

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Geochemistry and Mineralogy of Metapelite and Barium-Vanadium Muscovite from the Ogcheon Supergroup of the Deokpyeong Area, Korea (덕평지역(德平地域)의 옥천누층군(沃川累層群)에 분포(分布)하는 변성이질암(變成泥質岩)과 바륨-바나듐 백운모(白雲母)의 지구화학적(地球化學的) 및 광물학적(鑛物學的) 특성(特性))

  • Lee, Chan Hee;Lee, Hyun Koo
    • Economic and Environmental Geology
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    • v.30 no.1
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    • pp.35-49
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    • 1997
  • The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

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Properties of Ferroelectric Materials Applicable to Nano-storage Media (탐침형 정보 저장장치에 응용 가능한 강유전체 물질의 특성 연구)

  • Choi J.S.;Kim J.S.;Hwang I.R.;Byun I.S.;Kim S.H.;Jeon S.H.;Lee J.H.;Hong S.H.;Park B.H.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.173-179
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    • 2006
  • We have investigated structural and electrical properties of $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on $LaMnO_3$ (LMO) bottom electrodes with $LaAlO_3$ (LAO) substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domain by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as the media for nano-storage devices.

Effect of Continuous Cultivation Years on Soil Properties, Weed Occurrence, and Rice Yield in No-tillage Machine Transplanting and Direct Dry-seeding Culture of Rice (벼 무경운 기계이앙 및 건답직파 연속재배년수가 토양특성, 잡초발생 및 벼 생육에 미치는 영향)

  • Park, Hong-Kyu;Kim, Sang-Su;Choi, Won-Yong;Lee, Ki-Sang;Lee, Jae-Kil
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.47 no.3
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    • pp.167-173
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    • 2002
  • This experiment was conducted to figure out the change of soil physical properties, rice growth and yield with the years of continuous cultivation in direct dry-seeding and no-tillage machine transplanting. Experiments were conducted at NHAES(National Honam Agricultural Experiment Station, RDA, Iksan, Cheon Buk Province, South Korea) with a rice variety "Dongjinbyeo" from 1995 to 2000. In no-tillage machine transplanting cultivation, organic matter in soil was higher than that on direct dry-seeding and was significantly high in topsoil. Problematic weed species were E. crus-galli B., A. keisak H., and L. japonica M. Plant height and tiller number m-2 were higher in common-tillage during the total growth duration. The highest weedy rice occurrence of 27.5% was observed in live years' continuous direct dry-seeding and followed by 6.2%, in four years', and 3.7%, in three years'. The highest yield reduction of 38% was observed in five years' continuous direct dry-seeding. The reduction may resulted from the competition between weedy rice and cultivated rice.

Effect of double pinning mechanism in BSO-added GdBa2Cu3O7-x thin films

  • Oh, J.Y.;Jeon, H.K.;Lee, J.M.;Kang, W.N.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.3
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    • pp.13-17
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    • 2017
  • We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.