• Title/Summary/Keyword: B mode

검색결과 2,433건 처리시간 0.032초

Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB

  • Abbasizadeh, Hamed;Cho, Sung-Hun;Yoo, Sang-Sun;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권4호
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    • pp.528-533
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    • 2016
  • A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

포설된 단일모드 광섬유의 손실 특성 측정 (Loss Measurements of Installed Single-Mode Optical Fibers)

  • 전영윤;박재동;이만섭;양권식
    • 한국통신학회논문지
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    • 제16권12호
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    • pp.1266-1273
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    • 1991
  • 장거리 국간 선로에 포설된 단일모드 광섬유의 샘플집단과 모집단의 손실특성을 측정하였고, 구간(중계)거리분포를 측정 분석하였다. 접속손실을 포함한 평균손실은 130nm와 155nm에서 각각 0.55 0.05dB/km, 0.59 0.11/km로써 1550nm대역의 손실이 크게 나타났다. OTDR에 의한 손실특성 조사결과 1550nm대역의 손실증가 주 요인은 접속지점의 부적절한 여장처리에 따른 것이었다. 그리고 국내 평균중계거리는 24 7 km로써 31km 이하의 구간거리가 전체의 약 90%를 차지하고 있었다.

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Understanding of unsteady pressure fields on prisms based on covariance and spectral proper orthogonal decompositions

  • Hoa, Le Thai;Tamura, Yukio;Matsumoto, Masaru;Shirato, Hiromichi
    • Wind and Structures
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    • 제16권5호
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    • pp.517-540
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    • 2013
  • This paper presents applications of proper orthogonal decomposition in both the time and frequency domains based on both cross spectral matrix and covariance matrix branches to analyze multi-variate unsteady pressure fields on prisms and to study spanwise and chordwise pressure distribution. Furthermore, modification of proper orthogonal decomposition is applied to a rectangular spanwise coherence matrix in order to investigate the spanwise correlation and coherence of the unsteady pressure fields. The unsteady pressure fields have been directly measured in wind tunnel tests on some typical prisms with slenderness ratios B/D=1, B/D=1 with a splitter plate in the wake, and B/D=5. Significance and contribution of the first covariance mode associated with the first principal coordinates as well as those of the first spectral eigenvalue and associated spectral mode are clarified by synthesis of the unsteady pressure fields and identification of intrinsic events inside the unsteady pressure fields. Spanwise coherence of the unsteady pressure fields has been mapped the first time ever for better understanding of their intrinsic characteristics.

10 Gb/s 급 광통신용 1.55$\mu$m SI-PBH DFB-LD의 제작 및 특성연구 (Fabrication and characterization of 1.55$\mu$m SI-PBH DFB-LD for 10 Gbps optical fiber communications)

  • 김형문;김정수;오대곤;주흥로;박성수;송민규;곽봉신;김홍만;편광의
    • 한국광학회지
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    • 제8권4호
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    • pp.327-332
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    • 1997
  • 2단계 메사 식각 공정과 유기 금속 화학 증착방법으로 높은 비저항을 갖는 Fe-도핑된 반절연 InP층의 전류 차단층을 갖는 10 Gb/s 광통신용 초고속 1.55.mu.m 궤환형 반도체 레이저 다이오드를 제작하였다. 제작된 DFB-LD의 특성은 발진 임계전류~15 mA, slope efficiency ~0.13 mW/mA, 동 저항 ~6.0.OMEGA.이었고, 발진 파장은 1.546 .mu.m이며, 6 Ith까지의 전류에도 인접 모우드 억압비, SMSR>40dB 이상 (CW상태)으로써 안정된 단일 모우드 동작을 보였다. DFB-LD의 소신호 주파수 특성으로 27 mA의 작은 구동전류에서 이미 -3dB 대역폭이 10 GHz에 도달하였음을 보여주었고, 또한 최대 -3dB 대역폭으로 구동전류 90 mA에서 ~18 GHz까지 얻는 우수한 소신호 주파수 특성을 보여주었다. 10 Gb/s DFB-LD 모듈 전송시험에 있어서, 1.55.mu.m 파장의 레이저 다이오드 모듈로 일반 단일모우드 광섬유와 분산천이 광섬유에 대해서 전송시험한 결과 에러평탄면(error floor)없이 각각 10 km, 80 km를 전송할 수 있었다.

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비귀금속합금 표면처리방법과 레진시멘트 종류가 접착인장강도에 미치는 영향에 관한 연구 (A STUDY OF TENSILE BOND STRENGTH ACCORDING TO VARIED TREATMENT METHODS OF NONPRECIOUS METAL SURFACE AND RESIN CEMENTS)

  • 양태진;임주환;조인호
    • 대한치과보철학회지
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    • 제34권2호
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    • pp.335-348
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    • 1996
  • Retention is one of the major factors deciding the success and longevity of resin bonded restorations. The purpose of this study was to find a better resin cement and metal surface treatment method that would enhance the bonding strength. The bonding surfaces of Verabond, one of Ni-Cr-Be alloys, were treated with sandblasting(Group 1), sandblasting and EZ-Oxisor(Group 2), sandblasting and silicoating(Group 3), and than thay were bonded with All-Bond C & B, Panavia 21, Superbond C & B. The specimens were thermocycled, and the tensile bond strength was measured using the unive-rsal testing machine. Also the mode of bond failure was observed. The results were as folows. 1. The Superbond C & B showed the highest bond strength among the three resin cements and decreased in the order of Panavia 21, All-Bond C & B. There was significant differe-nce among them(p<0.05). 2. Group 3 showed the highest bond strength among the three metal surface treatment methods, and there was significant difference compared with Group 1 and Group 2(p<0.05). But there was no significant difference between Group 1 and Group 2. 3. Observing the mode of bond failure, Superbond C & B and Panavia 21 showed mostly cohesive failure in all groups. All-Bond C & B showed all types of bond failure in Group 3, but Group 1 and Group 2 showed only adhesive failure. 4. According to the results of this study, the silicoating method and 4-META containing resin cement were considered to be more acceptable for resin bonded restoration.

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X 대역 소형 디지털 위상 천이기 설계 (X-band Compact Digital Phase Shifter Design)

  • 엄순영;전순익;육종관;박한규
    • 한국전자파학회논문지
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    • 제13권9호
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    • pp.907-915
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    • 2002
  • 본 논문에서는 위성 통신용 능동 위상 배열 안테나 시스템에 적용할 소형 디지털 위상 천이기 구조를 제안하였다. 포개진 브랜치라인 하이브리드를 기본 소자로 사용하는 반사형 위상 천이기 구조로서 우모드 및 기모드 해석 방법을 사용하여 이론적인 해석 및 설계 변수들을 유도하였다. 또한, 제안한 구조의 전기적인 성능을 실험적으로 확인하기 위하여, 유전율이 2.17인 테프론 기판을 사용하여 X 대역 4비트 위상 천이기를 설계, 제작하였다. 제작된 회로의 크기는 3.5 cm $\times$ 3.0 cm보다 작았으며, 기존의 비결합 구조에 비하여 적어도 50 % 이상의 크기 절감을 가져왔다. 제작된 위상 천이기의 실험 결과는 7.9 - 8.4 GHz 동작 대역내에서 평균 삽입 손실 및 삽입 손실 변화가 각각 3.5 dB, $\pm$ 0.6 dB이하였으며, 입출력 반사 손실은 10 dB 이상이었다. 또한, $\pm$3$^{\circ}$의 rms 위상오차 범위 내에서 원하는 4비트 위상 특성 변화를 보여주었다.

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

  • Bhuiyan, Mohammad Arif Sobhan;Reaz, Mamun Bin Ibne;Badal, Md. Torikul Islam;Mukit, Md. Abdul;Kamal, Noorfazila
    • Transactions on Electrical and Electronic Materials
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    • 제17권5호
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    • pp.261-269
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    • 2016
  • A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.

광분배를 위한 Y-branch 제작과 광파이버와의 결합특성에 관한 연구 (A study on the fabrication of Y-branch for optical power distribution and its coupling properties with optical fiber)

  • 김상덕;박수봉;윤중현;이재규;김종빈
    • 한국통신학회논문지
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    • 제21권12호
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    • pp.3277-3285
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    • 1996
  • In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

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WLAN 및 Mobile WiMAX를 위한 2.3-2.7 GHz 대역 이중모드 CMOS RF 수신기 (A 2.3-2.7 GHz Dual-Mode RF Receiver for WLAN and Mobile WiMAX Applications in $0.13{\mu}m$ CMOS)

  • 이성구;김종식;김영조;신현철
    • 대한전자공학회논문지SD
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    • 제47권3호
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    • pp.51-57
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    • 2010
  • IEEE 802.11n 기반 무선 LAN과 IEEE 802.16e 기반 Mobile WiMAX에 적용할 수 있는 이중모드 직접 변환 수신기를 $0.13\;{\mu}m$ RF CMOS 공정을 이용하여 설계하였다. 설계된 직접 변환 수신기는 2.3-2.7 GHz의 주파수 범위에서 동작을 한다. 저잡음 증폭기에 Current Steering 기술을 사용하여 전체 이득의 크기를 3 단계로 조절이 가능하게 하였다. 플리커 잡음 영향을 낮추기 위해 믹서에 Current Bleeding 기술을 사용하였다. 믹서 LO를 위한 I/Q 위상 신호 발생을 위해 주파수 2-분주회로를 포함하였다. 제작된 직접 변환 수신기는 1.4V의 공급 전원에서 LO 버퍼를 포함하여 56 mA를 사용하며, 32 dB의 전력이득과 4.8dB의 잡음지수, 그리고 +6 dBm의 출력 $P_{1dB}$를 가진다.

마이크로웨이브 수신기용 다기능 주파수 변환 블록 설계 및 제작 (Design and Implementation of Multi-Function Conversion Block for Microwave Receiver)

  • 김재현;고민호;박효달
    • 한국전자파학회논문지
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    • 제26권7호
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    • pp.675-678
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    • 2015
  • 본 논문은 마이크로웨이브 수신기 구성을 위한 다기능 주파수 변환 블록을 설계 및 제작하였다. 제안한 다기능 주파수 변환 블록은 광대역 전압제어발진기와 이중모드 주파수 혼합기로 구성되어, 바이어스 전압 인가 여부에 따라 마이크로웨이브 수신기에 필요한 첫 번째 IF(Intermediate Frequency) 출력 주파수 4,595 MHz / 6,045 MHz는 720 MHz로 주파수 변환을 하고, Ku-대역 수신을 위한 IF 출력 주파수 720 MHz는 주파수 변환을 하지 않고 통과(bypass) 및 감쇄시키는 이중모드의 다기능 동작을 한다. 제작 및 측정결과, 각 중간주파수에서 LO 전력에 따른 변환손실 특성은 2~4 dBm의 LO 레벨에서 4,595 MHz는 13 dB, 6,035 MHz에서 12 dB, 720 MHz에서는 7.0 dB의 변환손실 특성을 나타내었다.