• Title/Summary/Keyword: B mode

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Accurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 dB

  • Abbasizadeh, Hamed;Cho, Sung-Hun;Yoo, Sang-Sun;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.528-533
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    • 2016
  • A low voltage high PSRR CMOS Bandgap circuit capable of generating a stable voltage of less than 1 V (0.8 V and 0.5 V) robust to Process, Voltage and Temperature (PVT) variations is proposed. The high PSRR of the circuit is guaranteed by a low-voltage current mode regulator at the central aspect of the bandgap circuitry, which isolates the bandgap voltage from power supply variations and noise. The isolating current mirrors create an internal regulated voltage $V_{reg}$ for the BG core and Op-Amp rather than the VDD. These current mirrors reduce the impact of supply voltage variations. The proposed circuit is implemented in a $0.35{\mu}m$ CMOS technology. The BGR circuit occupies $0.024mm^2$ of the die area and consumes $200{\mu}W$ from a 5 V supply voltage at room temperature. Experimental results demonstrate that the PSRR of the voltage reference achieved -118 dB at frequencies up to 1 kHz and -55 dB at 1 MHz without additional circuits for the curvature compensation. A temperature coefficient of $60 ppm/^{\circ}C$ is obtained in the range of -40 to $120^{\circ}C$.

Loss Measurements of Installed Single-Mode Optical Fibers (포설된 단일모드 광섬유의 손실 특성 측정)

  • 전영윤;박재동;이만섭;양권식
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.16 no.12
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    • pp.1266-1273
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    • 1991
  • Attenuation losses and repeater spans of single-mode optical fibers installed in the long hual optical transmission line were measured and analyzed. The average loss including splicing points was appeared to be 0.55 0.05dB/km and 0.59 0.01dB/km at 1300nm and 1550nm, respectively, and showed lager value at 1550nm window, The cause of loss increase at 1550nm range from the OTDR measurement was due to the inappropriate treatment of extra length of fiber at the splicing points. And average repeater span of domestic long haul line was 24 7km and 90% of total sampled repeater spans was within 31 km.

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Understanding of unsteady pressure fields on prisms based on covariance and spectral proper orthogonal decompositions

  • Hoa, Le Thai;Tamura, Yukio;Matsumoto, Masaru;Shirato, Hiromichi
    • Wind and Structures
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    • v.16 no.5
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    • pp.517-540
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    • 2013
  • This paper presents applications of proper orthogonal decomposition in both the time and frequency domains based on both cross spectral matrix and covariance matrix branches to analyze multi-variate unsteady pressure fields on prisms and to study spanwise and chordwise pressure distribution. Furthermore, modification of proper orthogonal decomposition is applied to a rectangular spanwise coherence matrix in order to investigate the spanwise correlation and coherence of the unsteady pressure fields. The unsteady pressure fields have been directly measured in wind tunnel tests on some typical prisms with slenderness ratios B/D=1, B/D=1 with a splitter plate in the wake, and B/D=5. Significance and contribution of the first covariance mode associated with the first principal coordinates as well as those of the first spectral eigenvalue and associated spectral mode are clarified by synthesis of the unsteady pressure fields and identification of intrinsic events inside the unsteady pressure fields. Spanwise coherence of the unsteady pressure fields has been mapped the first time ever for better understanding of their intrinsic characteristics.

Fabrication and characterization of 1.55$\mu$m SI-PBH DFB-LD for 10 Gbps optical fiber communications (10 Gb/s 급 광통신용 1.55$\mu$m SI-PBH DFB-LD의 제작 및 특성연구)

  • 김형문;김정수;오대곤;주흥로;박성수;송민규;곽봉신;김홍만;편광의
    • Korean Journal of Optics and Photonics
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    • v.8 no.4
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    • pp.327-332
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    • 1997
  • We fabricated the high speed 1.55${\mu}{\textrm}{m}$ distributed feedback laser diodes (DFB-LD) using both two-step mesa etching process and semi-insulating InP current blocking layers. The devices characteristics were threshold current of ~15mA, slope efficiency of ~0.13mW/mA, and dynamic resistance of ~6.0Ω, with as-cleaved facets. The fabricated DFB-LD showed the single longitudinal mode with more than 40dB up to 6 $I_{th}$(CW condition), emitting at the wavelength of 0.546${\mu}{\textrm}{m}$. The -3dB bandwidth was >10㎓ at the driving current of 27mA, and the maximum -3dB bandwidth was ~18㎓ at 90 mA current, showing the superior frequency response of SI-PBH DFB-LD. In the 10Gb/s transmission experiment for 1.55${\mu}{\textrm}{m}$ DFB-LD module, maximum 10 km of single mode fiber(SMF) or 80 km of dispersion shifted fiber (DSF) could be transmitted with error free.

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A STUDY OF TENSILE BOND STRENGTH ACCORDING TO VARIED TREATMENT METHODS OF NONPRECIOUS METAL SURFACE AND RESIN CEMENTS (비귀금속합금 표면처리방법과 레진시멘트 종류가 접착인장강도에 미치는 영향에 관한 연구)

  • Yang, Tai-Jin;Lim, Ju-Hwan;Cho, In-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.34 no.2
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    • pp.335-348
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    • 1996
  • Retention is one of the major factors deciding the success and longevity of resin bonded restorations. The purpose of this study was to find a better resin cement and metal surface treatment method that would enhance the bonding strength. The bonding surfaces of Verabond, one of Ni-Cr-Be alloys, were treated with sandblasting(Group 1), sandblasting and EZ-Oxisor(Group 2), sandblasting and silicoating(Group 3), and than thay were bonded with All-Bond C & B, Panavia 21, Superbond C & B. The specimens were thermocycled, and the tensile bond strength was measured using the unive-rsal testing machine. Also the mode of bond failure was observed. The results were as folows. 1. The Superbond C & B showed the highest bond strength among the three resin cements and decreased in the order of Panavia 21, All-Bond C & B. There was significant differe-nce among them(p<0.05). 2. Group 3 showed the highest bond strength among the three metal surface treatment methods, and there was significant difference compared with Group 1 and Group 2(p<0.05). But there was no significant difference between Group 1 and Group 2. 3. Observing the mode of bond failure, Superbond C & B and Panavia 21 showed mostly cohesive failure in all groups. All-Bond C & B showed all types of bond failure in Group 3, but Group 1 and Group 2 showed only adhesive failure. 4. According to the results of this study, the silicoating method and 4-META containing resin cement were considered to be more acceptable for resin bonded restoration.

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X-band Compact Digital Phase Shifter Design (X 대역 소형 디지털 위상 천이기 설계)

  • 엄순영;전순익;육종관;박한규
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.9
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    • pp.907-915
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    • 2002
  • In this paper, a compact digital phase shifter to be used an active phased array antenna system for satellite communications was proposed. The even and odd mode analysis for a given reflection-type phase shifter, which uses a folded hybrid coupler as a base element, was performed and the design parameters were derived. Also, to verify experimentally the electrical performances of the proposed structure, X-band 4-bit digital phase shifter was designed and fabricated using Teflon soft substrate $({\varepsilon}_r; =\;2.17)$. Its circuit size was less than 3.5 cm $\times$ 3.0 cm, and it exhibited at least 50 % size reduction as compared with the conventional unfolded configuration. The experimental results of the fabricated phase shifter showed that the average insertion loss and insertion loss variation were less than 3.5 dB, $\pm$ 0.6 dB within the operating band, 7.9 ~ 8.4 GHz, respectively. And, input and output return loss were more than 10 dB, respectively. Also, the phase response of the phase shifter showed 4-bit operation with $\pm$3$^{\circ}$ rms phase error.

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

  • Bhuiyan, Mohammad Arif Sobhan;Reaz, Mamun Bin Ibne;Badal, Md. Torikul Islam;Mukit, Md. Abdul;Kamal, Noorfazila
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.261-269
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    • 2016
  • A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.

A study on the fabrication of Y-branch for optical power distribution and its coupling properties with optical fiber (광분배를 위한 Y-branch 제작과 광파이버와의 결합특성에 관한 연구)

  • 김상덕;박수봉;윤중현;이재규;김종빈
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.12
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    • pp.3277-3285
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    • 1996
  • In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

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A 2.3-2.7 GHz Dual-Mode RF Receiver for WLAN and Mobile WiMAX Applications in $0.13{\mu}m$ CMOS (WLAN 및 Mobile WiMAX를 위한 2.3-2.7 GHz 대역 이중모드 CMOS RF 수신기)

  • Lee, Seong-Ku;Kim, Jong-Sik;Kim, Young-Cho;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.3
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    • pp.51-57
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    • 2010
  • A dual-mode direct conversion receiver is developed in $0.13\;{\mu}m$ RF CMOS process for IEEE 802.11n based wireless LAN and IEEE 802.16e based mobile WiMAX application. The RF receiver covers the frequency band between 2.3 and 2.7 GHz. Three-step gain control is realized in LNA by using current steering technique. Current bleeding technique is applied to the down-conversion mixer in order to lower the flicker noise. A frequency divide-by-2 circuit is included in the receiver for LO I/Q differential signal generation. The receiver consumes 56 mA at 1.4 V supply voltage including all LO buffers. Measured results show a power gain of 32 dB, a noise figure of 4.8 dB, a output $P_{1dB}$ of +6 dBm over the entire band.

Design and Implementation of Multi-Function Conversion Block for Microwave Receiver (마이크로웨이브 수신기용 다기능 주파수 변환 블록 설계 및 제작)

  • Kim, Jae-Hyun;Go, Min-Ho;Park, Hyo-Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.7
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    • pp.675-678
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    • 2015
  • In this paper, we proposed a multi-function conversion block for microwave receiver. The proposed multi-function conversion block is composed of a broadband voltage controlled oscillator and a dual-mode mixer. Depending on whether the bias voltage is supplied, the first IF(Intermediate Frequency) output frequency(4,595 MHz/6,045 MHz) needed in microwave receiver is converted to 720 MHz and the another IF output frequency(720 MHz) for receiving Ku-band has the multi-functional operations of the dual mode that are bypass and attenuation without frequency conversion. Implementation and measurement results show that each intermediate frequency has conversion loss characteristic according to the LO power. The LO power conversion loss of 4,595 MHz at the LO levels from 2 dBm to 4 dBm is 13 dB, another of 6,035 MHz is 12 dB and the other of 720 MHz is 7.0 dB.