• 제목/요약/키워드: Average circuit

검색결과 425건 처리시간 0.023초

정밀한 완전 차동 Sample-and-Hold 회로 (An Accurate Fully Differential Sample-and-Hold Circuit)

  • 기중식;정덕균;김원찬
    • 전자공학회논문지B
    • /
    • 제31B권3호
    • /
    • pp.53-59
    • /
    • 1994
  • A new fully differential sample-and-hold circuit which can effectively compensate the offset voltage of an operational amplifier and the charge injection of a MOS switch is presented. The proposed circuit shows a true sample-and-hold function without a reset period or an input-track period. The prototype fabricated using a 1.2$\mu$m double-polysilicon CMOS process occupies an area of 550$\mu$m$\times$288$\mu$m and the error of the sampled ouput is 0.056% on average for 3V input at DC.

  • PDF

생체 이식형 장치를 위해 구현된 403.5MHz CMOS 링 발진기의 성능 분석 (Performance Analysis of 403.5MHz CMOS Ring Oscillator Implemented for Biomedical Implantable Device)

  • 펄도스 아리파;최광석
    • 디지털산업정보학회논문지
    • /
    • 제19권2호
    • /
    • pp.11-25
    • /
    • 2023
  • With the increasing advancement of VLSI technology, health care system is also developing to serve the humanity with better care. Therefore, biomedical implantable devices are one of the amazing important invention of scientist to collect data from the body cell for the diagnosis of diseases without any pain. This Biomedical implantable transceiver circuit has several important issues. Oscillator is one of them. For the design flexibility and complete transistor-based architecture ring oscillator is favorite to the oscillator circuit designer. This paper represents the design and analysis of the a 9-stage CMOS ring oscillator using cadence virtuoso tool in 180nm technology. It is also designed to generate the carrier signal of 403.5MHz frequency. Ring oscillator comprises of odd number of stages with a feedback circuit forming a closed loop. This circuit was designed with 9-stages of delay inverter and simulated for various parameters such as delay, phase noise or jitter and power consumption. The average power consumption for this oscillator is 9.32㎼ and average phase noise is only -86 dBc/Hz with the source voltage of 0.8827V.

Novel Average Value Model for Faulty Three-Phase Diode Rectifier Bridges

  • Rahnama, Mehdi;Vahedi, Abolfazl;Alikhani, Arta Mohammad;Nahid-Mobarakeh, Babak;Takorabet, Noureddine
    • Journal of Power Electronics
    • /
    • 제19권1호
    • /
    • pp.288-295
    • /
    • 2019
  • Rectifiers are widely used in industrial applications. Although detailed models of rectifiers are usually used to evaluate their performance, they are complex and time-consuming. Therefore, the Average Value Model (AVM) has been introduced to meet the demand for a simple and accurate model. This type of rectifier modeling can be used to simplify the simulations of large systems. The AVM of diode rectifiers has been an area of interest for many electrical engineers. However, healthy diode rectifiers are only considered for average value modeling. By contrast, faults occur frequently on diodes, which eventually cause the diodes to open-circuit. Therefore, it is essential to model bridge rectifiers under this faulty condition. Indeed, conventional AVMs are not appropriate or accurate for faulty rectifiers. In addition, they are significantly different in modeling. In this paper, a novel application of the parametric average value of a three-phase line-commutated rectifier is proposed in which one diode of the rectifier is considered open-circuited. In order to evaluate the proposed AVM, it is compared with experimental and simulation results for the application of a brushless synchronous generator field. The results clearly demonstrate the accuracy of the proposed model.

A 6-16 GHz GaN Distributed Power Amplifier MMIC Using Self-bias

  • Park, Hongjong;Lee, Wonho;Jung, Joonho;Choi, Kwangseok;Kim, Jaeduk;Lee, Wangyong;Lee, Changhoon;Kwon, Youngwoo
    • Journal of electromagnetic engineering and science
    • /
    • 제17권2호
    • /
    • pp.105-107
    • /
    • 2017
  • The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

제곱근 회로를 이용한 온도와 공급 전압에 둔감한 CMOS 정전류원 (A temperature and supply insensitive CMOS current reference using a square root circuit)

  • 이철희;손영수;박홍준
    • 전자공학회논문지C
    • /
    • 제34C권12호
    • /
    • pp.37-42
    • /
    • 1997
  • A new temperature and supply-insensitive CMOS current reference circuit was designed and tested. Te temperature insensuitivity was achieved by eliminating the mobility dependence term through the multiplication of two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a newly designed CMOS square root circuit. The CMOS sqare root circuit was derived from its bipolar counterpart by operating the MOS transistors in the subthreshold region. The supply insensitivity was achieved by using an internal voltage generator. Te test chip was designed ans sent out for fabrication by using a 2.mu.m double-poly double-metal n-well CMOS technology. When an external voltage source was used for the square root circuit, the maximum variation and the average temperature sensitivity were measured to be 3% and 21.4ppm/.deg.C, respectively, for the temperature range of -15~130.deg.C. The maximum current variation with supply voltage was measured to be 3% within the commerical supply voltage range of 4.5~5.5V at 30.deg. C.

  • PDF

An Accurate Gate-level Stress Estimation for NBTI

  • Han, Sangwoo;Lee, Junho;Kim, Byung-Su;Kim, Juho
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제13권2호
    • /
    • pp.139-144
    • /
    • 2013
  • Negative bias temperature instability (NBTI) has become a major factor determining circuit reliability. The effect of the NBTI on the circuit performance depends on the duty cycle which represents the stress and recovery conditions of each device in a circuit. In this paper, we propose an analytical model to perform more accurate duty cycle estimation at the gate-level. The proposed model allows accurate (average error rate: 3%) computation of the duty cycle without the need for expensive transistor-level simulations Furthermore, our model estimates the waveforms at each node, allowing various aging effects to be applied for a reliable gate-level circuit aging analysis framework.

Testing and Self Calibration of RF Circuit using MEMS Switches

  • Kannan, Sukeshwar;Kim, Bruce;Noh, Seok-Ho;Park, Se-Hyun
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국해양정보통신학회 2011년도 추계학술대회
    • /
    • pp.882-885
    • /
    • 2011
  • This paper presents testing and self-calibration of RF circuits using MEMS switches to identify process-related defects and out of specification circuits. We have developed a novel multi-tone dither test technique where the test stimulus is generated by modulating the RF carrier signal with a multi-tone signal generated using an Arbitrary Waveform Generator (AWG) with additive white Gaussian noise. This test stimulus is provided as input to the RF circuit and peak-to-average ratio (PAR) is measured at the output. For a faulty circuit, a significant difference is observed in the value of PAR as compared to a fault-free circuit. Simulation is performed for various circuit conditions such as fault-free as well as fault-induced and their corresponding PARs are stored in the look-up table. This testing and self-calibration technique is exhaustive and efficient for present-day communication systems.

  • PDF

전기회로 구성 방법에 따른 열전발전 모듈 성능 특성 (Performance Characteristics of Thermoelectric Generator Modules For Parallel and Serial Electrical Circuits)

  • 김윤호;김명기;김서영;리광훈;엄석기
    • 설비공학논문집
    • /
    • 제22권5호
    • /
    • pp.259-267
    • /
    • 2010
  • An experiment has been performed in order to investigate the characteristics of multiple thermoelectric modules (TEMs) with electrical circuits. The open circuit voltage of TEM connected parallel circuit is equal to the sum of individual TEMs. In contrast, the open circuit voltage is equal to the average of that individual TEM for a series circuit. The power output and conversion efficiency of TEM for both parallel and series circuits increase as the operating temperature conditions for individual TEMs becomes identical. Comparing parallel with series circuits, the power generation performance is more excellent for series circuit than parallel circuit. This result is attributed to the power loss from the TEM with better power generation performance.

단락시간비를 이용한 GMAW의 비드 높이 제어에 관한 연구 (A Study on Bead Height Control of GMAW by Short Circuit Time Ratio)

  • 감병오;조상명;김상봉
    • 한국해양공학회지
    • /
    • 제16권2호
    • /
    • pp.53-59
    • /
    • 2002
  • This paper shows the experimental results controlling the height of surface and back bead in GMAW by analyzing the unexpected gaps between base metals produced in welding and by controlling welding velocity due to the variation of the gap between base metals in thin-plate welding. The back bead behavior and burn-through in I-type butt joint $CO_2$ welding of thin mild steel are analyzed in the views of short circuit time ratio and short circuit frequency. It is shown through experimental consideration that the short circuit time ratio method is more reasonable than the short circuit frequency method in analyzing the formulation of back bead under changing the gap between base metals. Based on the these results, welding manipulator is designed so as to satisfy the bead height control in real time by measuring the short circuit time ratio. To show the effectiveness of the developed bead formulation control system, the experiment is implemented under two welding conditions such as increasing gap from 0mm to 0.8mm and gradually increasing gap from 0mm to 1.2mm. The experimental results show that the bead formulation can be controlled uniformly in spite of the variation of the gap between base metals.

분진운의 최소점화에너지에 대한 정전기 방전회로의 매개변수 영향 (Influence of Electrostatic Discharge Circuit Parameters on the Minimum Ignition Energy of Suspended Dust Clouds)

  • 문균태;정재희;미주키 야마구마;최광석
    • 한국안전학회지
    • /
    • 제25권5호
    • /
    • pp.22-26
    • /
    • 2010
  • The ignitability(minimum ignition energy, MIE) of a suspended dust clouds is very important aspect of technical safety indices. This paper reported the experimental results dealing with the influence of discharge circuit on the MIE of a suspended dust clouds. The movement of a suspended dust clouds was also observed with the high speed camera. The Hartmann vertical-tube apparatus(MIKE-3) described in the international standard of IEC and Polypropylene (PP, 50% volume-average, D50: $761{\mu}m$) resin powders were used in this experiment. The following results were obtained: (1) the MIE of a suspended PP powder depended markedly on the discharge circuit; in other words, when a resistor was connected in series with the discharge sparking circuit(RC), the lowest value(31mJ) of MIE was obtained for a suspended PP powder comparison with the other circuits(C circuit; 370mJ or LC circuit; 71mJ). (2) the discharge duration time is more important than other factors with regard to MIE of a suspended PP powder.