• Title/Summary/Keyword: Avalanche Effect

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Experimental investigation of impact behaviour of shear deficient RC beam to column connection

  • Murat, Aras;Tolga, Yilmaz;Ozlem, Caliskan;Ozgur, Anil;R. Tugrul, Erdem;Turgut, Kaya
    • Structural Engineering and Mechanics
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    • v.84 no.5
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    • pp.619-632
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    • 2022
  • Reinforced concrete (RC) structures may be subjected to sudden dynamic impact loads such as explosions occurring for different reasons, the collision of masses driven by rockfall, flood, landslide, and avalanche effect structural members, the crash of vehicles to the highway and seaway structures. Many analytical, numerical, and experimental studies focused on the behavior of RC structural elements such as columns, beams, and slabs under sudden dynamic impact loads. However, there is no comprehensive study on the behavior of the RC column-beam connections under the effect of sudden dynamic impact loads. For this purpose, an experimental study was performed to investigate the behavior of RC column-beam connections under the effect of low-velocity impact loads. Sixteen RC beam-column connections with a scale of 1/3 were manufactured and tested under impact load using the drop-weight test setup. The concrete compressive strength, shear reinforcement spacing in the beam, and input impact energy applied to test specimens were taken as experimental variables. The time histories of impact load acting on test specimens, accelerations, and displacements measured from the test specimens were recorded in experiments. Besides, shear and bending crack widths were measured. The effect of experimental variables on the impact behavior of RC beam-column connections has been determined and interpreted in detail. Besides, a finite element model has been established for verification and comparison of the experimental results by using ABAQUS software. It has been demonstrated that concrete strength, shear reinforcement ratio, and impact energy significantly affect the impact behavior of RC column-beam connections.

Improving The Breakdown Characteristics of AlGaN/GaN HEMT by Optimizing The Gate Field Plate Structure (게이트 필드플레이트 구조 최적화를 통한 AlGaN/GaN HEMT 의 항복전압 특성 향상)

  • Son, Sung-Hun;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.5
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    • pp.1-5
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    • 2011
  • In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

Prebreakdown Corona Discharge of Point-to-Plane Gap in $SF_6$ Gas ($SF_6$ 가스중에서 침대평판간극(針對平板間隙)의 전구(前驅)코로나 방전(放電))

  • Paek, Yong-Hyun;Lee, Bok-Hee;Jeon, Duk-Kyu
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.980-982
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    • 1992
  • This paper deals with the dielectric behaviors of $SF_6$ gas and prebreakdown growth caused by lightning impulse voltages In inhomogeneous field perturbed with a fixed needle-shaped protrusion on the electrode. The measuring interpretation of the external current induced by moving charges is described. The temporal growth of prebreakdown is observed by using a shunt and photomultiplier. The prebreakdown processes are initiated by the first streamer corona at a needle protrusion, the flashover of the main gap in the positive polarity is very sensitive to the local field and propagates into the gap with the leader mechanism. It Is found that the dependence of the prebreakdown phenomena on the polarity of applied voltages is caused by the effect of space charges. In addition, the proposed measuring techniques are very useful to perform the measurements of avalanche currents, corona discharges in inhomogeneous fields and partial discharges in voids.

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Analysis of temperature effects on DC parameters of AlGaAs/GaAs HBT (AlGaAs/GaAs HBT의 DC 파라미터에 미치는 온도영향의 해석)

  • 김득영;박재홍;송정근
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.39-46
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    • 1996
  • In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

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A study on the recognition system design of one-time use of a standard plastic garbage bag at automaticat garbage facility (자동 쓰레기 집하 시설에 사용되는 1회사용 종량제 봉투 인식 장치 설계에 관한 연구)

  • Kim, Kea-Kook;Seo, Chang-Ok
    • Proceedings of the Korean Society of Computer Information Conference
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    • 2012.01a
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    • pp.41-43
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    • 2012
  • Today many people are greatly interested in the environment. Especially increasing affluent of food causes a great amount of food waste. To handle this effectively, we now have a lot of problems of disposing garbage all over the world. In Korea, in order to reduce this garbage, we should use a standard plastic garbage bag in which we have to throw away our garbage. So it has an effect on significantly reducing the waste amount every year. Now, there are a lot of cases that residents again use a standard plastic garbage bag. The purpose of this study is to propose algorithm preventing the re-cycling of a standard plastic garbage bag.

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Image Authentication Using Only Partial Phase Information from a Double-Random-Phase-Encrypted Image in the Fresnel Domain

  • Zheng, Jiecai;Li, Xueqing
    • Journal of the Optical Society of Korea
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    • v.19 no.3
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    • pp.241-247
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    • 2015
  • The double-random phase encryption (DRPE) algorithm is a robust technique for image encryption, due to its high speed and encoding a primary image to stationary white noise. Recently it was reported that DRPE in the Fresnel domain can achieve a better avalanche effect than that in Fourier domain, which means DRPE in the Fresnel domain is much safer, to some extent. Consequently, a method based on DRPE in the Fresnel domain would be a good choice. In this paper we present an image-authentication method which uses only partial phase information from a double-random-phase-encrypted image in the Fresnel domain. In this method, only part of the phase information of an image encrypted with DRPE in the Fresnel domain needs to be kept, while other information like amplitude values can be eliminated. Then, with the correct phase keys (we do not consider wavelength and distance as keys here) and a nonlinear correlation algorithm, the encrypted image can be authenticated. Experimental results demonstrate that the encrypted images can be successfully authenticated with this partial phase plus nonlinear correlation technique.

Experimental Investigation of Output Current Variation in Biased Silicon-based Quadrant Photodetector

  • Liu, Hongxu;Wang, Di;Li, Chenang;Jin, Guangyong
    • Current Optics and Photonics
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    • v.4 no.4
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    • pp.273-276
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    • 2020
  • We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 ㎂, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.

Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications

  • Lim, Kyung Taek;Kim, Hyoungtaek;Kim, Jinhwan;Cho, Gyuseong
    • Nuclear Engineering and Technology
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    • v.53 no.2
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    • pp.618-625
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    • 2021
  • In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅p-well) of 5.0 × 1012, 4.0 × 1012, and 3.0 × 1012 atoms/cm2 under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at Vex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

DABC: A dynamic ARX-based lightweight block cipher with high diffusion

  • Wen, Chen;Lang, Li;Ying, Guo
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.17 no.1
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    • pp.165-184
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    • 2023
  • The ARX-based lightweight block cipher is widely used in resource-constrained IoT devices due to fast and simple operation of software and hardware platforms. However, there are three weaknesses to ARX-based lightweight block ciphers. Firstly, only half of the data can be changed in one round. Secondly, traditional ARX-based lightweight block ciphers are static structures, which provide limited security. Thirdly, it has poor diffusion when the initial plaintext and key are all 0 or all 1. This paper proposes a new dynamic ARX-based lightweight block cipher to overcome these weaknesses, called DABC. DABC can change all data in one round, which overcomes the first weakness. This paper combines the key and the generalized two-dimensional cat map to construct a dynamic permutation layer P1, which improves the uncertainty between different rounds of DABC. The non-linear component of the round function alternately uses NAND gate and AND gate to increase the complexity of the attack, which overcomes the third weakness. Meanwhile, this paper proposes the round-based architecture of DABC and conducted ASIC and FPGA implementation. The hardware results show that DABC has less hardware resource and high throughput. Finally, the safety evaluation results show that DABC has a good avalanche effect and security.

Key-based dynamic S-Box approach for PRESENT lightweight block cipher

  • Yogaraja CA;Sheela Shobana Rani K
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.17 no.12
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    • pp.3398-3415
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    • 2023
  • Internet-of-Things (IoT) is an emerging technology that interconnects millions of small devices to enable communication between the devices. It is heavily deployed across small scale to large scale industries because of its wide range of applications. These devices are very capable of transferring data over the internet including critical data in few applications. Such data is exposed to various security threats and thereby raises privacy-related concerns. Even devices can be compromised by the attacker. Modern cryptographic algorithms running on traditional machines provide authentication, confidentiality, integrity, and non-repudiation in an easy manner. IoT devices have numerous constraints related to memory, storage, processors, operating systems and power. Researchers have proposed several hardware and software implementations for addressing security attacks in lightweight encryption mechanism. Several works have made on lightweight block ciphers for improving the confidentiality by means of providing security level against cryptanalysis techniques. With the advances in the cipher breaking techniques, it is important to increase the security level to much higher. This paper, focuses on securing the critical data that is being transmitted over the internet by PRESENT using key-based dynamic S-Box. Security analysis of the proposed algorithm against other lightweight block cipher shows a significant improvement against linear and differential attacks, biclique attack and avalanche effect. A novel key-based dynamic S-Box approach for PRESENT strongly withstands cryptanalytic attacks in the IoT Network.