• Bulletin of the Korean Chemical Society
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• 제11권4호
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• pp.290-296
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• 1990

Ion-surface collision studies at low kinetic energies (1-100 eV) provide a unique opportunity for investigating reactions and collision dynamics at surfaces. A special ion optics system for generating an energy- and mass-selected ion beam of this energy is designed and constructed. An ultrahigh vacuum (UHV) reaction chamber, in which the ions generated from the beamline collide with a solid surface, is equipped with Auger electron spectroscopy (AES) and thermal desorption spectrometry (TDS) as in-situ surface analytical tools. The resulting beam from the system has the following characteristics : ion current of 5-50 nA, energy spread < 2eV, current stability within ${\pm}5%,$ and unit mass resolution below 20 amu. The performance of the instrument is illustrated with data representing the implantation behavior of $Ar^+$ into a graphite (0001) surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.279-279
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• 2013

차세대 태양전지로 주목받는 화합물 박막 태양전지(CIGS, CdTe, etc)는 광흡수계수가 매우 높아 얇은 두께의 광흡수층으로도 빛을 효과적으로 흡수할 수 있으므로 광흡수층의 역할이 매우 중요하며 이에 대한 정확한 정보와 이해는 필수적이다. 특히 GIGS 박막 태양전지의 정량 및 각 원소의 깊이 방향의 분포를 분석하는 것은 박막형 태양전지 개발에 크게 기여한다 [1,2]. 본 실험에서는 조성비를 알고 있는 균질한 CIGS박막을 표준시료로 사용하여 ICP-MS로 측정하여 평균농도를 구한 뒤 TOF-SIMS, D-SIMS, Auger Electron Spectroscopy (AES) 로 깊이 방향 분석 결과를 통해 상대감도(RSF)를 계산한 후 각 원소의 농도로 변환하여 정량분석 결과를 얻었다. 일반적으로 손쉽게 정량적인 정보를 얻는 AES에 비해 정량성이 떨어지는 TOF-SIMS와 D-SIMS는 스퍼터링시 사용되는 Cs 빔과 시료 내 금속과의 클러스터 이온(GaCs+와 InCs+)의 깊이 방향 조성을 이용하면 매트릭스 효과를 배제할 수 있어서 좀 더 정확한 정량 분석이 가능하므로 시료내 금속과 Cs 이 결합된 클러스터 이온의 깊이 방향 조성을 측정하여 각원소의 농도를 계산하였고 스퍼터링 에너지를 포함한 실험 변수에 따른 재현성 및 정량성의 차이를 비교분석하였다. 또한 CIGS층에 불순물로 들어 있는 미량원소들의 깊이 분포도도 함께 관찰하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.521-524
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• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국태양에너지학회 논문집
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• 제35권4호
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• pp.9-15
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• 2015

Black cobalt solar selective coatings were prepared by using an electroplating method. The changes in the optical properties of the black cobalt selective coating due to thermal degradation were analyzed by using the Auger electron spectroscopy (AES) and spectrophotometer. The black cobalt selective coating was prepared on a copper substrate by using a synthesized electrolyte with $CoCl_2$ and KSCN at a current density of ${\sim}0.5A/dm^2$ for 45s ~ 60s. Its optical properties were a solar absorptance (${\alpha}$) of the order of 0.80 ~ 0.84 and a thermal emittance (${\epsilon}$) of 0.01. From the AES depth profile analysis of heated sample, thermal degradation of the black cobalt selective coating heated for 33 hours at temperature of $350^{\circ}C$ occurred primarily due to interdiffusion at interface of cobalt and copper substrate. This results were predictable that the ${\alpha}$ decreases due to the thermal oxidation and diffusion.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.689-695
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• 2002

막질의 조성은 공정 개발과 고품질 생산 적용을 위한 반도체 소자의 제조에 있어서 풍요한 요소의 하나 이다. 막의 표면과 계면의 조성은 기본적으로 AES측 통하여 알 수 있다. 본 연구에서는 온도, DCS post flow, shower head life time 등과 같은 공정조건으로 LPCVD법을 이용한 tungsten suicide 박막을 증착하고 이들의 구조적, 전기적 특성과 조성비를 측정하며 WSix박막을 해석하였고 이로부터 Si/W의 조성비를 비교하였다. Si와 W의 조성비는 DCS post flow에 의하여 WSix박막의 표면에서 증가하였으며, 폴리실리콘과 tungsten silicide 계면에서는 온도의 증가에 따라 조성비가 증가함을 알 수 있었다. 이 결과는 메모리 소자 제조의 WSix 박막 증착의 공정조건 최적화에 적용될 수 있다.

• 분석과학
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• 제5권1호
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• pp.127-134
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• 1992

본 연구에서는 순수한 W에 B의 첨가량을 달리하여 플라즈마 아크 용해한 후, B가 용해잉고트와 재결정 후의 미세조직에 미치는 영향에 대하여 조직관찰, 결정립도 측정, 경도시험, AES 및 XRD 분석을 통하여 조사하였다. 조직관찰 및 결정립도 측정결과, B가 W의 고용한도 내의 조성으로 첨가되었을 때는 B의 첨가량에 따라 결정립이 급격히 감소하여 결정립미세화 효과를 나타내었다. 고용한도 이상의 조성으로 B가 첨가되었을 경우에는 B가 고용된 초정 W과 W-$W_2B$의 공정조직을 가진 2개의 상으로 이루어진 것이 관찰되었으며 AES 및 XRD 분석에 의해 확인되었다. B의 첨가량의 증가에 따라 재결정온도가 상승하였고 재결정립도가 미세화되는 것을 알 수 있었다.