• Korean Journal of Soil Science and Fertilizer
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• v.35 no.4
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• pp.207-215
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• 2002

Changes in salinity, hydraulic conductivity and penetration resistance in a reclaimed tidal land reclaimed in 1986 were studied. The salinity monitoring based on electrical conductivity of saturated extract, ECe, was conducted from 1994, when the land use for experimental crop production started after tile drainage. The site was abandoned since 1999. The hydraulic conductivity was measured by a sand fill auger hole method, and the resistance was measured with a dynamic penetrometer in situ. The averaged ECe in 1994 was $33.7dS\;m^{-1}$ ranging from 25.5 to $44.8dS\;m^{-1}$, and was decreased to $25.7dS\;m^{-1}$ with large range from 0.8 to $70.3dS\;m^{-1}$ before experiment was $1.89{\times}10^{-7}m\;s^{-1}$. It increased to $1.32{\times}10^6m\;s^{-1}$ in the top 20-cm soil with large variability, while it showed $3.44{\times}10^7m\;s^{-1}$ beneath the 20-cm soil depth with less variability. The penetration resistance of the soil ranged from 0.05 to 9.99MPa. The vertical distribution of penetration resistance indicated the hardened layer was developed at the depth of 20~40 cm where the hydraulic conductivity was sharply decreased.

• Journal of the Korean Geotechnical Society
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• v.23 no.5
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• pp.111-129
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• 2007

The standard construction manual of the SDA(Separated Doughnut Auger) piling method was proposed so that the resisting capacity of the augered piles could work effectively. 405 dynamic pile load tests and 30 static pile load tests were performed for 265 test piles, which were installed by the SDA piling method in 33 sites in Korea. The results of the pile load tests showed that the end bearing capacity of the SDA augered piles depended on the property of various soil stratums and did not agree with ones estimated by the existing formula based on several standard design codes. On the basis of the pile load test results, four formulas were presented according to bearing stratums to estimate quantitatively the unit end bearing capacity of the SDA augered piles. The formulas for the unit end bearing capacity of piles on soils or weathered rocks were related to N-value given by SPT(Standard Penetration Test), while the unit end bearing capacity on bedrock was suggested to be more than 1500 $tf/m^2$. The presented formulas were compared with the existing formulas, which were presented by several standard design codes to design the augered piles. In order to use correctly the presented formulas, the quality of Standard Penetration Test should be controlled precisely. Also it is desirable to choose a pilot construction site, where both dynamic and static pile load tests are performed.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.43 no.4
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• pp.493-499
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• 2023

Recently, with the development of construction machinery, low-vibration construction machine such as Tricone-Bits, which can drill both soil and rock layers and minimize vibration, is being used frequently. However, although many studies have been conducted on the prediction of vibration values for earth augers and pile drivers, the reality is that studies on the effects of vibration on low-vibration drilling equipment are lacking. In this paper, ground vibration values for Tricone-Bits were measured, and a vibration distance damping formula was proposed using this. In addition, after predicting the vibration of the earth auger and pile driver using the previously proposed vibration distance damping formula, the degree of vibration damping for the Tricone-Bits was evaluated by comparing and analyzing it. As a result, the Tricone-Bits showed a vibration reduction effect of 97% and 93% compared to these machine and It will help with management and prediction of the ground vibration effects evaluation on the low-vibration equipment such as Tricone-Bits.

• Korean Journal of Soil Science and Fertilizer
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• v.12 no.4
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• pp.169-178
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• 1980

Ammonium nitrate explosion technique was applied to seek a convenient method for the establishment of orchard on the undulating to rolling land or hill side of Pogog clay loam soil (Fine Aquic Fragiudalfs : Planosols) having high bulk density and low permeability. Explosions were made by three ammonium nitrate explosives placed in the bottom of 90cm deep auger hole with every 2m interval (Explosion I) and 4m interval (Explosion II) respectively. The effect of the explosion on physical properties of the soil was investigated and compared with the effect induced by manual digging, excavation of $1m{\times}1m$ in diameter and depth (Manual digging I) and trenching of $1m{\times}1m{\times}25m$ in width, depth, and length (Manual digging II) respectively. The results investigated after 7 months from the treatments are summarized as follows : 1. The explosion or manual digging reduced bulk density and hardness, whereas the treatments increased porosity, hydraulic conductivity, and available moisture-holding capacity of the soil. 2. The explosion of 4 m interval improved physical properties of the soil to optimum level up to 70cm of the distance from the explosion core in the range of depth 0-60cm, while in the case of depth from 60 to 100cm the optimum level was achieved only within 50cm radius. 3. When exploded in 2 m interval, the effect in the 0-60cm depth was overlapped between two explosion cores. The effect in the depth between 60 and 100cm, however, was found to be independent of the explosion intervals. 4. The manual digging was only costly and laborious but effective only within the work-up zone. 5. For the soils having bulk density higher than $1.4g/cm^3$ after the treatments, the field capacity determined 72 hours after a heavy rain was lower than the laboratory estimate at the suction of 1/3 atm. 6. The top growth of apple tree for the first year revealed that the explosion seemed better treatment than the manual digging, even though the difference was insignificant.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.199-203
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• 2000

$Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• The Journal of Natural Sciences
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• v.14 no.1
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• pp.139-149
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• 2004

It was aimed to find out an efficient method of drying hot pepper, of which powder is used as one of the main ingredients in Korean dish preparation including Kimchi. Before sun or heat drying fruits harvested were horizontally cut into three pieces punched with an auger of 4 mm in diameter, or used as the whole fruit. Various drying methods were used including sun drying, drying under a plastic house, sun drying after heat drying for 5 hours at $70^{\circ}C$, $80^{\circ}C$, or $90^{\circ}C$, heat drying only at $50^{\circ}C$, $60^{\circ}C$, or $70^{\circ}C$, and changing temperature of $70^{\circ}C$, $5hours+60^{\circ}C$ until coplete dry, $80^{\circ}C+60^{\circ}C$, or $90^{\circ}C+60^{\circ}C$. The results are summarized as follows. With sun drying of the whole fruit, in required about 10days to reach the satisfactory level of dryness as indicated by its moisture content of below 10% in general. In case of heat drying combined with sun drying, it required 5 to 7 days. For cut fruits, it required 1 or 2 days less than for whole or pinholed fruits until drying. Under heat of alternation temperature drying, cut fruits also dried 15-20 hours earlier compared with whole of pinholed fruits. There were not significant differences for the recovery rate of the fruit with various drying methods. The occurrence of white fruits, which are caused by one of physiological disorders during drying, and rotten fruits was reduced with the cut fruit drying. The damages were very high with the PE house drying, but very little with the heat drying.