• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.619-627
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• 2011

The poisoning effect of Zr in aluminum alloys was investigated by analyzing the filtered cakes of aluminum alloy melt taken with the $Prefil^{(R)}$ footprinter through a variety of analytic instruments, SEM/EDX, Auger, and TEM. Experimental results indicated that the morphology and chemical composition of the aluminum alloys were not modified with the addition of Zr, which is to previous belief that Zr poisoning is caused by modification of $(Ti_{1-x}Zr_x)Al_3$. On the other hand, $TiAl_3$ surroundig $TiB_2$ particles was modified and its lattice parameter was more mismatched by increasing Zr content, leading to less nucleation rate. This is also supported by the observation that the poisoning effect is reduced when Ti is added, resulting in a lower content ratio of Zr to Ti. These results suggest that extra Ti should be added to eliminate the poisoning effect of Zr in aluminum alloys containing Zr.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.449-455
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• 2010

To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.8 no.2
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• pp.139-150
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• 2022

Theranostics, a composite word of therapy and diagnosis, is known as personalized medicine and the concept of diagnosis and treatment at the same time. In nuclear medicine, it means performing both therapeutic and diagnostic radioisotope therapy using the same target molecule. The increased production and utilization of ⁶⁴Cu opens a new era of theranostics. The studies introduced here have shown that ⁶⁴CuCl₂ and various compounds or biomolecules labeled with ⁶⁴Cu are unique radiopharmaceuticals with physiological properties suitable for use as diagnostic and therapeutic agents. So far, these two abilities have been described only for radioactive iodine. Although ⁶⁴Cu has complex chemical properties compared to other PET radioisotopes such as ⁶⁸Ga, it has an appropriate half-life and enables high-quality PET images similar to ¹⁸F, which is an advantage in terms of diagnosis. In addition, since it also has therapeutic properties through the release of β^- particles and Auger electrons by electron capture, radiopharmaceuticals using ⁶⁴Cu stand for innovative radiopharmaceuticals for theranostic purposes. Therefore, based on the initial results obtained using ⁶⁴Cu as a therapeutic agent, it is expected that additional research on the application of ⁶⁴Cu will lead to a new era in the theranostics field.

• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.17-19
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• 2010

In this work, the optimized process condition of chemical solution deposition which is used to planarize the surface of the metal tape (which is used to grow IBAD-MgO texture template) was investigated. $Y_2O_3$ films were dip-coated on the surface of the unpolished metal tape as the seed and barrier layer. The effects of $Y_2O_3$ concentration of the solution (0.5wt.%, 1.3wt.%, 2.8wt.%, 5.6wt.%) and the number of coatings on the surface morphology and barrier capability against the diffusion from the metal tape were examined. The surface morphology and the thickness of the film were observed using the scanning electron microscope and the atomic force microscope. The presence of elements in metal tape on the film surface was analyzed using the auger electron spectroscopy. The $Y_2O_3$ film thickness increases with increasing the $Y_2O_3$ concentration in the solution, and the surface became smoother with increasing the number of coating cycles. The best result was obtained from the $Y_2O_3$ film coated 4 cycles using 2.8wt.% solution.

• Journal of the Korean Geotechnical Society
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• v.23 no.1
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• pp.13-21
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• 2007

Rock socketed drilled shafts are used as foundations for bridges and other transportation structures because of their load carrying capabilities. However, only limited information is available in the literature on the effects of roughness on the unit side resistance of rock socketed drilled shafts. The objective of this study is to investigate the effect of drilling tools on the socket roughness in soft clay shale in Texas. Field study showed that the drilling tools, auger and core barrel, produced different roughness in the boreholes.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.112-114
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• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Korean Geosynthetics Society
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• v.11 no.4
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• pp.45-53
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• 2012

Ground drilling is a common method to conduct site investigation, soil improvement, and pile installation. In the point of construction ground drilling requires electrical energy to drill a hole in ground in which the energy exerts into the motor located on the head of auger and generates rotational power. In this paper it is verified that the exerted electrical energy is closely related to the strength characteristics of ground. Measurement sensors, recording system, and drilling system were developed to obtain exerted motor current and drilling depth and laboratory soil box tests were carried out. The measured motor current and boring depth were applied to predict SPT N-value and the prediction results were compared to SPT N-value of laboratory tests. The test results show that the exerted electrical energy to bore ground be a good index to estimate SPT N-value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.