• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.521-524
• /
• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.3
• /
• pp.29-33
• /
• 2002

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.473-476
• /
• 1997

Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1 ${\mu}{\textrm}{m}$ with high scan speed. The resolution for Si machining is determined by the selectivity of the chemical reaction rather than the laser spot size. In this study, we have obtained the maximum etch rate of 434.7 ${\mu}{\textrm}{m}$/sec with high aspect ratio. The characteristics of etched groove was investigated by scanning electron microscope(SEM) and auger electron spectroscopy(AES). It is assumed that the technique using arson ion laser is applicab1e to fabricate microstructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.8
• /
• pp.641-646
• /
• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.93-97
• /
• 2010

We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1932-1934
• /
• 2003

본 논문은 신경전달물질 중 우울증, 신부전증의 지표 물질인 세로토닌의 농도를 극미량의 시료를 사용하여 정량할 수 있는 방법을 개발하기 위해 초소형 효소 고정화 전극을 개발하였다. 전극은 실리콘 웨이퍼 상에 반도체 공정을 이용하여 마이크로 크기의 Pt 박막 전극을 제작하였고, 전기화학적 방법으로 pyrrole 단량체를 Pt 전극 상에 순환전압전류법을 이용하여 산화적으로 전기 중합하였다. 효소의 고정은 일정 전압을 인가한 시간대 전류법으로 고정화하였다. 제작된 전극은 시간대 전류법으로 세로토닌의 농도에 따른 감도를 측정하였다. 세로토닌의 농도 범위 $1.0{\mu}mol/L{\sim}10mmol/L$에서의 감도는 $7.0{\mu}$A/decade를 나타내었으며, 실험결과에 따라 전극의 표면에서 발생하는 전류는 세로토닌의 농도에 비례함을 알 수 있었다. 전극의 표면분석은 Scanning Electron Microscopy(SEM), Energy Dispersive X-ray Spectroscopy(EDX) 그리고 Auger Electron Spectroscopy(AES)를 이용하여 분석하였다.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.1
• /
• pp.49-54
• /
• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.183-186
• /
• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.131-135
• /
• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.2
• /
• pp.123-129
• /
• 2006

The head to disk spacing must be decreased to increase recording densities in hard disk drives. Recently, to decrease the head to disk spacing, smooth disk having no bumps onto the lading zone has used. In this research, we compared the number of particles generated ill HDD with smooth and textured disks. We used a sampling method using a particle sampler and a CPC (condensation particle counter) to detect particles in HDD. First, we sampled and counted particles generated with disk rotational speed and various rest times when the smooth disk and textured disks were used, then analyzed the sampled particles by SEM (scanning electron microscopy) and AES (auger electron spectroscopy). In results of measuring particles, more particles in case of LZT disk drive generated than that of the smooth disk drive in all test modes. The number of particles generated in the smooth disk was very low. The particle generation increased as the rest time increased (smooth/LZT disks) and more particles in case of LZT disk drive generated than that of the smooth disk drive. In results of analyzing particle components, Al, Ti, Si components were detected and we could not found differences between components in case of smooth/LZT disk drive.