• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.23-33
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• 1995

AISI 304 stainless steel has high resistance to corrosion due to the presence of a self-healing chromium oxide film on the surface, which also accounts for the difficulty in plating. Surface cleaning of this alloy is of fundamental importance in gold plating since its effectiveness puts an upper limit on the quality of the final coating. The cleaning of AISI 304 stainless steel was investigated with elimination of artificial passive oxide film and degreasing of remaining buffing wax as stearic acid. The familiar cleaning methods i.e. ultrasonic cleaning, electro-cleaning and activation treatment were fabricated in this study. Activation treatment showed best cleaning efficiency for elimination of passive oxide film among these methods, which was also confirmed by AES (Auger electron spectrometer) analysis. However, the best condition of cleaning was obtained by combining these methods. Electrocleaning time, for degreasing the stearic acid layer, was decreased with increasing amount of added KCN.

• Proceedings of the KSR Conference
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• 2003.10b
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• pp.176-181
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• 2003

Damages by vibration and noise due to the construction performance are increasing. The rise of construction demand and enlargement of equipments are major reasons of this damage. As a result, the enmity of the people is provoked and this appears to be an obstacle of construction work. Especially, in case of ground improvement construction. Casing pipe is inserted into the Sand Drain, Sand Compaction Pile and Vibrated Crushed-stone Pile by vibration power when carrying out. Hence, a pillar is formed and it creates vibration and noise. This causes a lot of restrictions to construction condition. The low Vibration and low noise construction equipments uses earth auger and hydrulic cylinder for insertion and chopping operation instead of vibro hammer, which is the source of vibration and noise. This minimize ground disturbanceand decrease vibration and noise successfully, but increase chopping effect greatly. Thus, this new equipment is not only suitable for environment but also excellent engineering method of construction.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.183-188
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• 1995

고에너지(50-200KeV)로 가속된 이온을 모재표면에 물리적으로 투입하므로써 표면의 조성 및 조직을 변화시키는 공정인 이온주입기술을 이용하여 경량고강도소재로 각광받고 있는 AI2218 합금의 재식성 향상을 연구하였다. 질소이온주입은 DuoPIGatron 이온원을 사용하여 가속전압 100KeV, 조사량 $1{\times}10^{17}ions/\textrm{cm}^2$~$5{\times}10^{17}ions/\textrm{cm}^2$의 조건으로 행하였으며 AI합금의 열화를 방지하기 위하여 시편온도를 $60^{\circ}C$이하로 유지하였다. 질소이온 주입재의 재식성 평가를 위하여 3.5% NaCI 용액에서 양극분극시험 및 5% NaCI 용액에서 염수분무시험을 행하였다. Auger Electron Spectroscopy와 Transmission Electron Microscopy을 이용하여 표면의 질화물형성 여부를 조사하였으며, Scanning Electron Microscopy을 이용하여 부식된 표면을 관찰하였다. AI2218합금에 질소이온을 주입한 결과 표면에 미세한 AIN 석출물을 형성하였으며 이러한 질화물형성에 의해 공식(pitting)발생을 억제하고 부식전류밀도를 감소시켜 내식성이 향상되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.113-113
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• 1995

The adsorpption and decompposition of NO on a stepped ppt(111) surface have been studied using thermal desorpption sppectroscoppy and Auger electron sppectroscoppy. NO adsorbs molecularly in two different states of the terrace and the stepp, which are distinguishable in thermal desorpption sppectra. NO dissociates via a bent sppecies at the stepp sites on the basis of vibrational sppectrum data repported ppreviously. The dissociation of NO is activation pprocess : the activation energy is estimated to be about 2 kcal/mol. Increase in the NO dissociation with adsorpption tempperature is expplained by a pprocess controlled by different of the dissociated atomic nitrogen from the stepp to the terrace of the surface. In addition to No and N2, the desorpption ppeak of N2O is observed. We conclude that the formation of N2O is attributed to surface reaction of No and N adsorbed on the surface.

• Tribology and Lubricants
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• v.19 no.6
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• pp.329-334
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• 2003

The antiwear properties of amphiphilic monolayers and composite multilayer on silicon surface were investigated using micro­tribometer and Auger Electron Spectroscopy. Langmuir­Blodgett (LB) monolayers from behenic acid, 2,4­heneicosanedione(HD) and its lopper complex((HD)$_2$Cu) were fabricated on silicon surface and the composite multilayer of 5­bilayer of (HD)$_2$Cu was fabricated on the surface of octadecyltrichlorosilane (OTS) self­assembled monolayer (SAM). We observed that LB monolayers and the composite multilayer exhibited a steady and excellent friction response when compared with the OTS SAM. These LB mono and multilayer also showed much higher wear­resistance than the OTS SAM.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.