Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 12
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- Pages.59-64
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- 1996
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- 1016-135X(pISSN)
Characteristics of InSb MIS device prepared by remote PECVD SiO$_{2}$
Remote PECVD SiO$_{2}$ 를 이용한 InSb MIS 소자의 특성
Abstract
InSb MIS devices prepared by remote PECVD SiO
Keywords