• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.261-264
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• 1991

Titanium carbide(TiC) films were deposited on stainless-steel sheets using HCD(Hollow Cathode Discharge) reactive ion plating. Acetylene gas was used as the reactant gas. The characteristics of TiC films were examined by X-Ray diffraction, $\alpha$-step, ESCA(Electron Spectroscopy for Chemical Analysis), and, AES(Auger Electron Spectroscopy). The results were discussed with regard to various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.670-676
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• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.2
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• pp.42.2-42.2
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• 2013

We investigate the cosmic evolution of the black hole mass-bulge luminosity relation with a sample of 52 moderate-luminosity AGNs at $z{\simeq}0.36$ and $z{\simeq}0.57$, corresponding to look-back times of 4 and 6 Gyrs. By employing robust multi-component spectral and structural decomposition methods to the obtained high-quality Keck spectra and high-resolution HST images, black hole masses ($M_{BH}$) are estimated from the Hbeta broad emission line with the 5100A nuclear luminosity, and bulge luminosities ($L_{bul}$) are derived from the surface photometry. Based on these consistent measurements, we constrain the redshift evolution of the $M_{BH}-L_{bul}$ relation by performing the Monte Carlo simulations designed to account for selection effects. We provide implications of our results in terms of the black hole-galaxy co-evolution and discuss possible bulge growth mechanisms.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.124-130
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• 2005

The research on surface modification technology has been advanced to improve the properties of engineering materials. ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.27-32
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• 2000

We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.163-163
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• 2003

TiN barrier막 위에 metal organic chemical deposition(MOCVD)법으로 RuO$_2$ 를 증착시 TiN막 표면을 세정처리하지 않을 경우 RuO$_2$의 핵생성이 어렵고, 그로 인해 RuO$_2$ 연속막이 형성되기 힘들다. 그러므로 RuO$_2$의 핵생성을 향상시키기 위해 TiN막에 대한 전처리 세정이 필수적이다. TiN막의 전처리 세정방법으로 ECR plasma 세정법을 사용하였으며, $O_2$ plasma와 H$_2$ plasma 그리고 Ai plasma를 이용해 각각의 exposure time을 변화시키며 전처리 세정을 실시하였다. H$_2$ plasma와Ar plasma의 exposure time이 증가됨에 따라 RuO$_2$의 핵생성이 향상되었다. 본 연구에서는 scanning electron microscopy(SEM), Auger electron emission spectrometry(AES), Atomic Force Microscope(AFM), X-ray diffraction (XRD) 등의 분석을 통해 TiN막 표면에 대한 ECR plasma 전처리 세정 이 RuO$_2$의 핵생성과 연속막 성장에 미치는 효과에 대해 조사하였다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.273-275
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• 2003

본 실험은 고출력 반도체 레이저의 p-side-down 마운팅용 솔더로서 AuSn 합금 솔더(80wt%:20wt%)의 적합성에 대해 연구하였다. $1{\mu}m$이하의 균일도로 폴리싱 된 Cu heat sink의 표면에 두께 $1{\mu}m$의 Ni로 코팅을 한다음, AuSn 다층박막은 e-beam 증착기로 AuSn 합금 솔더는 열증착기로 각각 증착하였다. 열처리는 산화 방지를 위해 $N_2$ 분위기에서 행하였으며, 동일한 압력으로 마운팅을 하였다. 표면의 거칠기와 형상은 AFM(Atomic Force Microscope)과 SEM(Scanning Electron Microscopy)으로 그리고 Au와 Sn의 성분비는 AES(Auger Electron Spectroscopy) 로 비교하였다. 또한 CW(연속발진)을 통한 L-I(Light-Current)측정을 통해 본딩상태를 비교하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.160-162
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• 2009

We have prepared and characterized particle based CIGS thin films using a thermal evaporator. As the copper rate, selenium rate changed, CIGS particles were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS thin films were deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Vis-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).