• Journal of Magnetics
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• v.4 no.1
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• pp.5-9
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• 1999

Effect of sulfur segregation on tertiary recrystallization and magnetic induction during final annealing was investigated in a 3% Si-Fe electrical strip containing 6 ppm(LS) and 15 ppm(HS) sulfur. During final annealing, Auger peak height of segregated sulfur on the surface of the strips reached a maximum, and then decreased to low level with increasing annealing time, which is attributed to sulfur segregation and evaporation. The magnetic induction of the thin-gauged 3% Si strip was inversely proportional to the Auger peak height of segregated sulfur on the surface. The overall profile for surface segregation of sulfur and B10 was observed, irrespective of sulfur content in Si-Fe strips, but the peaks of LS strips appeared earlier than those of HS strips. The grain growth rate of the LS strips during final annealing was faster than that of the HS strips, which may be attributed to the pinning effects of segregated sulfur. With increasing final annealing temperature, B10 value increased rapidly and the saturation level in B10 increased.

• Analytical Science and Technology
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• v.7 no.4
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• pp.517-526
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• 1994

Large insoluble phases and dispersoids in Al-Li-Cu-Mg-Mn-Zr alloys containing Mn were analyzed with EPMA(Electron Probe Microanalyzer) and SAEM(Scanning Auger Electron Microscope). Morphology, distribution and volume fraction of the large insoluble phase were also analyzed quantitatively by optical microscopy. Mechanical properties were tested at room temperature and at $200^{\circ}C$. With increasing Mn contents, the volume fraction of the large insoluble phases increased steeply, thus decreasing ductility. Mn was found to be very effective for obtaing uniformly distributed fine-grain structures. The alloy containing 0.44 wt% Mn showed the highest tensile strength among Mn-bearing alloys tested.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.420-420
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• 2010

AC PDP에서 유전체 보호막으로 사용되는 MgO 박막은 높은 이차전자방출계수($\gamma$)로 인해 방전전압을 낮춰주는 중요한 역할을 하고 있다. 이러한 MgO 보호막의 이차전자방출계수를 증가시키기 위해 MgO 의 Energy Band Structure 규명이 중요한 연구 주제가 되고 있다. MgO의 이차전자방출계수($\gamma$)는 Auger 중화 이론에 의해 방출 메커니즘이 설명이 되고, 그 원리는 다음과 같다. 고유의 이온화 에너지를 가진 이온이 MgO 표면에 입사 되면, Tunneling Effect에 의해 전자와 이온 사이에 중화가 일어나고, 중화가 되고 남은 에너지가 MgO Valance Band 내의 전자에게 전달되면 이때 남은 에너지(${\Delta}E$)가 MgO의 일함수(Work function) 보다 크게 되면 이차전자로 방출된다. 본 실험 에서는 $\gamma$-FIB System을 이용하여 결정 방향이 (100), (110), (111)을 갖는 Single Crystal MgO에 이온화 에너지가 24.58eV인 He Ion source를 주사 하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 MgO 내의 Energy Band Structure를 실험적으로 측정하였다. 이를 통해 MgO Single Crystal의 일함수 및 Defect Level의 분포를 확인하였다.

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.539-544
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• 2012

Thermal shock behavior of TiN-coated SUS 304 substrate was investigated using a laser ablation method. By short surface ablation with a pulse Nd-YAG laser, considerable surface crack and spalling were observed, whereas there were few oxidation phenomena, such as grain growth of TiN crystallites, nucleation and growth of $TiO_2$ crystallites, which were observed from the coatings quenched from $700^{\circ}C$ in a chamber. The oxygen concentration of the ablated coating surface with the pulse laser also had a lower value than that of the quenched coating surface by Auger electron spectroscopy and electron probe micro analysis. These results were attributed to the fact that the properties of the pulse laser method have a very short heating time and so the diffusion time for oxidation was insufficient. Consequently, it was verified that the laser thermal shock test provides a way to evaluate the influence of the thermal shock load reduced oxidation effect.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.652-661
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• 2008

Reduction of NOx in emission gas, improvement of engine efficiency, and extension of warranty period has made demands for developing materials more corrosively resistant to the inner-muffler environments or predicting the lifetime of materials used in muffler more precisely. The corrosion inside muffler has been explained with condensate corrosion mainly though thermal oxidation experiences prior to condensate corrosion. Hence, the aim of this study is to describe how the thermal oxidation affects the corrosion of stainless steel exposed to the inner-muffler environments. Auger electron spectroscopy and electrochemical tests were employed to analyze oxide scale and to evaluate corrosion resistance, respectively. Thermal oxidation has different role of condensate corrosion depending on the temperature: inhibiting condensate corrosion below $380^{\circ}C$ and enhancing condensate corrosion above $380^{\circ}C$. The low temperature oxidation causes to form compact oxide layer functioning a barrier for penetrating condensate into a matrix. Although though thermal oxidation caused chromium-depleted layer between oxide layer and matrix, the enhancement of the condensate corrosion in high temperature oxidation resulted from corrosion-induced crevice formed by oxide scale rather than corrosion in chromium-depleted layer. It was proved by aids of anodic polarization tests and measurements of pitting corrosion potentials. By the study, the role of high temperature oxidation layer affecting the condensate corrosion of stainless steels used as muffler materials was well understood.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• Journal of the Korean Geosynthetics Society
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• v.15 no.3
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• pp.57-66
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• 2016

In this study, to prevent possible collapse caused by hydraulic or mechanical instability, liquid nitrogen injection method is developed and implemented at the tip of drilling auger of steel pipe propulsion tunneling. In this study, 1/5-scale model auger and sand chamber were manufactured. The prototype diameter of steel pile (or casing) is assumed about 1,000 mm. For the frictional sandy soils and plastic weathered soils, liquid nitrogen injection methods were tested varying water contents of the soils. For the induced hydraulic instability, the ground near the drilling auger was frozen within approximately 5 minutes preventing mechanical collapse and water infiltration. Securing stability of steel pile propulsion tunneling using liquid nitrogen was much more effective for which the water content of the soil somewhat exceeds the optimum water content.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.6 no.1
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• pp.17-23
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• 2008

In this study, plasma processing of metal surface is experimentally investigated to enhance the surface decontamination efficiency and to find out the reaction mechanism. Cobalt, the major contaminant in the nuclear facilities, and three fluorine-containing gases, $CF_4/O_2$, $SF_6/O_2$, and $NF_3$ are chosen for the investigation. Thin metallic disk specimens are prepared and their surface etching reactions with the three plasma gases are examined. Results show that the maximum etching rate of $17.2\;{\mu}m/min.$ is obtained with NF3 gas at $420^{\circ}C$, while with $CF_4/O_2$, $SF_6/O_2$ gas plasmas those of $2.56\;{\mu}m/min.$ and $1.14\;{\mu}m/min.$ are obtained, respectively. Along with etching experiments, constituent elements of the reaction products are identified to be cobalt, oxygen, and fluorine by AES (Auger Electron Spectroscopy) analysis. It turns out that the oxygen atoms are physically adsorbed ones to the surface from the ambient not participation ones during the analysis after reaction, which supports that the surface reaction of cobalt is mainly to be a fluorination reaction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.581-584
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• 1998

TiN thin films were grown on (100) Si substrate by atomic layer epitaxy at 130 - $240^{\circ}C$ using TEMAT and NH3 as precursors. Reactants were injected into the reactor in sequence of TEMAT precursor vapor pulse, N2 purging gas pulse, NH3 gas pulse and N2 purging gas pulse so that gas-phase reactions could be removed. The films were characterized by means of x-ray diffraction(XRD), 4-point probe, atomic force microscopy(AFM) and auger electron spectroscopy(AES).