• Journal of Welding and Joining
• /
• 제35권2호
• /
• pp.1-5
• /
• 2017

Many microelectronic devices are miniaturizing the capacitance density and the size of the capacitor. Along with this miniaturization of electronic circuits, tantalum (Ta) capacitors have been on the market due to its large demands worldwide and advantages such as high volumetric efficiency, low temperature coefficient of capacitance, high stability and reliability. During a tantalum capacitor manufacturing process, arc welding has been used to weld base frame and sub frame. This arc welding may have limitations since the downsizing of the weldment depends on the size of welding electrode and the contact time may prevent from improving productivity. Therefore, to solve these problems, this study applies laser spot welding to weld nickel (Ni) and Au-Sn-Ni alloy using CW IR fiber laser with lap joint geometry. All laser parameters are fixed and the only control variable is laser irradiance time. Four different shapes, such as no melting upper workpiece, asymmetric spherical-shaped weldment, symmetric weldment, and, excessive weldment, are observed. This shape may be due to different temperature distribution and flow pattern during the laser spot cutting.

• Journal of Ceramic Processing Research
• /
• 제13권spc2호
• /
• pp.359-362
• /
• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.

• 한국표면공학회지
• /
• 제39권6호
• /
• pp.276-281
• /
• 2006

In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

• 한국지구과학회지
• /
• 제35권4호
• /
• pp.259-266
• /
• 2014

폐 PCBs의 스크랩으로부터 염소-차아염소산염 용액을 이용하여 Au와 Ag를 친환경적이고 효과적으로 용출시키고자 하였다. PCBs에 Cu, Sn, Sb, Al, Ni, Pb, Au 등과 같은 유용금속이 함유되어 있는 것을 EDS 분석으로 확인하였다. 최대 Au 용출율은 1%의 광액농도, 2:1의 염산:차아염소산나트륨 그리고 2 M의 NaCl 농도조건이다. Au 회수율이 가장 높은 메타중아황산나트륨 농도는 3 M에서였다. 염소-차아염소산염이 폐 컴퓨터에 함유되어 있는 Au와 Ag를 효과적으로 용출시킬 수 있는 용매제 임을 그리고 메타중아황산나트륨이 Au를 간단하게 침전시킬 수 있는 첨가제임을 확인하였다.

• 센서학회지
• /
• 제16권1호
• /
• pp.62-67
• /
• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국소음진동공학회논문집
• /
• 제16권12호
• /
• pp.1272-1278
• /
• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.708-711
• /
• 1999

The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.

• 마이크로전자및패키징학회지
• /
• 제12권3호
• /
• pp.197-205
• /
• 2005

RF MEMS 기술에서 패키지의 개발은 매우 중요하다. RF MEMS 패키지는 소형화, hermetic 특성, 높은 RF 성능 및 신뢰성을 갖도록 설계되어야 한다. 또한 가능한 저온의 패키징 공정이 가능해야 한다. 본 연구에서는 저온 공정을 이용한 RF MEMS 소자의 hermetic 웨이퍼 레벨 패키징을 제안하였다. Hermetic sealing을 위하여 약 $300{\times}C$의 Au-Sn 공정 접합 (eutectic bonding) 기술을 사용하였으며, Au-Sn의 조합으로 형성된 sealing부의 폭은 $70{\mu}m$이었다. 소자의 전기적 연결을 위하여 기판에 수직 via hole을 형성하고 전기도금 (electroplating) 방법을 이용하여 Cu로 채웠다. 완성된 RF MEMS 패키지의 최종 크기는 $1mm\times1mm\times700{\mu}m$이었다. 패키징 공정의 최적화 및 $O_2$ 플라즈마 애싱 공정을 통하여 접합 계면 및 via hole의 void들을 제거할 수 있었다. 또한 패키지의 전단 강도 및 hermeticity는 MIL-STD-883F의 규격을 만족하였으며 패키지 내부에서 오염 및 기타 유기 물질은 발생하지 않았다. 패키지의 삽입 손실은 2 GHz에서 0.075 dB로 매우 작았으며, 여러 종류의 신뢰성 시험 결과 패키지의 파손 및 성능의 감소는 발견되지 않았다.

• 한국생산제조학회지
• /
• 제20권2호
• /
• pp.187-192
• /
• 2011

UBM(Under Bump Metallurgy) is very important for successful realization of Flip-Chip technology. In this study, it is investigated the interfacial reactions between various Sn-Ag solder alloys and Ni-P/Au UBM and Cu plate finish. It is also evaluated the shear strength by using the micro shear-punch test method for Sn-37Pb alloy, binary and ternary alloys of environment-friendly Pb-free solder alloys which are applied in the electronic packages. In terms of interfacial microstructure, the Pb-free solder joints have thicker IMCs than the Sn-Pb solder joints. The thickness of IMC is related to Reflow time. The IMC has been observed to grow with the increase in Reflow time. As a result of the shear test, in case of Max. shear strength, Pb-free solder showed the highest strength value and Sn-37Pb showed the lowest strength value 10 be generally condition of Reflow time.

• 마이크로전자및패키징학회지
• /
• 제9권2호
• /
• pp.1-9
• /
• 2002

실제 BGA패키지에서 Sn-Ag-(Cu) 솔더와 금속패드가 반응하여 생성된 금속간 화합물의 특성을 Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS)f) X-ray Diffractometer (XRD)를 사용하여 분석하였다. EDS로 분석한 결과를 보면 BGA 패키지에서 Sn-Ag-Cu 솔더와 Au/Ni/Cu 금속층간의 반응으로 생성된 금속간화합물은 $(Cu,Ni)_6Sn_5$로 예상되며 . Cu의 편석은 솔더와 Ni 층 사이에서 발견되었다. XRD 분석결과 Cu를 함유하고 있는 Sn-Ag-Cu 솔더와 Ni층 사이에서는 $\eta -Cu_6 Sn_5$ 타입의 금속간화합물이 분석되었으며 Sn-Ag 솔더와 Ni층 사이에서는 $Ni_3$Sn_4$가 분석되었다. 계면에 생성된 금속간화합물은 리플로 회수와솔더내의 Cu의 함량에 따라증가하였다