• Title/Summary/Keyword: Au electrodes

Search Result 200, Processing Time 0.025 seconds

Redox-Active Self-Assembled Monolayer on Au ultramicroelectrode and its Electrocatalytic Detection of p-aminophenol Oxidation

  • Kim, Yun Jee;Kim, Ki Jun;Jung, Seung Yeon;Hwang, You Jin;Kwon, Seong Jung
    • Journal of Electrochemical Science and Technology
    • /
    • v.10 no.2
    • /
    • pp.170-176
    • /
    • 2019
  • Alkanethiol self-assembled monolayers (SAMs) and partially ferrocene (Fc) modifications were applied to the Au ultramicroelectrode (UME) rather than to standard sized electrodes with dimension of millimeters. The electron transfer mediation of the SAMs and Fc modified Au UME was investigated by using a p-aminophenol (p-AP) oxidation reaction via cyclic voltammetry. The electrocatalytic p-AP oxidation at the SAMs and Fc modified Au UME showed a much larger electrocatalytic current density than that at the standard sized electrode due to the fast mass transfer rate at the UME.

Influence of Thiol Molecular Backbone Structure on the Formation and Reductive Desorption of Self-Assembled Aromatic and Alicyclic Thiol Monolayers on Au(111) Surface

  • Kang, Hungu;Noh, Jaegeun
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.5
    • /
    • pp.1383-1387
    • /
    • 2013
  • The surface structure and electrochemical behavior of self-assembled monolayers (SAMs) prepared from benzenethiol (BT), cyclohexanethiol (CHT), and cyclopentanethiol (CPT) on Au(111) surface were examined by scanning tunneling microscopy (STM) and cyclic voltammetry (CV) to understand the influence of thiol molecular backbone structure on the formation and reductive desorption behavior of SAMs. STM imaging showed that BT and CPT SAMs on Au(111) surface formed at room temperature were mainly composed of disordered domains, whereas CHT SAMs were composed of well-ordered domains with three orientations. From these STM results, we suggest that molecule-substrate interaction is a key parameter for determining the structural order and disorder of simple aromatic and alicyclic thiol SAMs on Au(111). In addition, the reductive desorption peak potential for BT SAMs with aromatic rings was observed at a less negative potential of -566 mV compared to CHT SAMs (-779 mV) or CPT SAMs (-775 mV) with aliphatic cyclic rings. This reductive desorption behavior for BT SAMs is due to the presence of p-orbitals on the aromatic rings, which promote facile electron transfer from the Au electrode to BT as compared to CHT and CPT. We also confirmed that the reductive desorption behavior for simple alicyclic thiol SAMs such as CHT and CPT SAMs on Au electrodes was not significantly influenced by the degree of structural order.

A glucose biosensor based on deposition of glucose oxidase onto Au nanoparticles poly(maleic anhydride)-grafted multiwalled carbon nanotube electrode (금 나노입자/폴리(maleic anhydride) 그래프트 탄소나노튜브에 글루코스 옥시다아제 담지를 기반으로 한 글루코스 바이오센서)

  • Piao, Ming-Hua;Son, Pyeong-Soo;Chang, Choo-Hwan;Choi, Seong-Ho
    • Analytical Science and Technology
    • /
    • v.23 no.2
    • /
    • pp.165-171
    • /
    • 2010
  • Glucose oxidase ($GOD_{ox}$) immobilized biosensor was fabricated by two methods. In one of the methods, gold nanoparticles (Au-NPs) prepared by ${\gamma}$-irradiation were loaded into the poly(maleic anhydride)-grafted multi-walled carbon nanotube, PMAn-g-MWCNT electrode via physical entrapment. In the other method, the Au-NPs were prepared by electrochemical reduction of Au ions on the surface of PMAn-g-MWCNT electrode and then GODox was immobilized into the Au-NPs. The $GOD_{ox}$ immobilized biosensors were tested for electrocatalytic activities to sense glucose. The sensing range of the biosensor based on the Au-NPs physically modified PMAn-g-MWCNT electrode was from $30\;{\mu}M$ to $100\;{\mu}M$ for the glucose concentration, and the detection limit was $15\;{\mu}M$. Interferences of ascorbic acid and uric acid were below 7.6%. The physically Au deposited PMAn-g-MWCNT paste electrodes appear to be good sensor in detecting glucose.

Comparison of the Electrical and Optical Properties in between Transparent ITO and Au Electrodes using Hydrogen-storage Metals as Intermediate Layers (수소저장합금을 이용한 p-GaN ITO 투명전극과 Au 전극과의 특성비교)

  • Chae, Seung-Wan;Kim, Chul-Min;Kim, Eun-Hong;Lee, Byung-Kyu;Shin, Young-Chul;Kim, Tae-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.7
    • /
    • pp.610-614
    • /
    • 2008
  • In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode (Al:Au 음극층을 이용한 양면발광(dual emission) 유기 EL 소자의 Al 두께별 특성 평가)

  • Lee, Su-Hwan;Kim, Dal-Ho;Yang, Hee-Doo;Kim, Ji-Heon;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
    • /
    • v.7 no.1
    • /
    • pp.47-51
    • /
    • 2008
  • The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

  • PDF

Properties of the Various Power Ratio in GZOB/AU Multilayers (전력비 변화에 따른 Au Multilayer 위에 증착한 GZOB 박막의 특성)

  • Lee, Jong-Hwan;Yu, Hyun-Kyu;Lee, Kyu-Il;Lee, Tae-Yong;Kang, Hyun-Il;Kim, Eung-Kwon;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.11
    • /
    • pp.977-980
    • /
    • 2008
  • We investigated the effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films. GZOB thin films were deposited on Au based poly carbonate(PC) substrate with various power in the range from 60 to 120 W by DC magnetron sputtering. In the result, GZOB films at 100 W exhibited a low resistivity value of $1.12\times10^{-3}\Omega-cm$, and a visible transmission of 80 % with a thickness of 300 nm. This result indicated that the addition of Ga and B in ZnO films leads to the improvement of conductivity and transparent. From the result, we can confirm the possibility of the application as transparent conductive electrodes.

Fabrication and characterization of NbTi-Au-NbTi Josephson junctions

  • Pyeong Kang, Kim;Heechan, Bang;Bongkeon, Kim;Yong-Joo, Doh
    • Progress in Superconductivity and Cryogenics
    • /
    • v.24 no.4
    • /
    • pp.6-10
    • /
    • 2022
  • We report on the fabrication and measurements of metallic Josephson junctions (JJs) consisting of Au nanoribbon and NbTi superconducting electrodes. The maximum supercurrent density in the junction reaches up to ~ 3×105 A/cm2 at 2.5 K, much larger than that of JJ using single-crystalline Au nanowire. Temperature dependence of the critical current exhibits an exponential decay behavior with increasing temperature, which is consistent with a long and diffusive junction limit. Under the application of a magnetic field, monotonous decrease of the critical current was observed due to a narrow width of the Au nanoribbon. Our observatons suggest that NbTi/Au/NbTi JJ would be a useful platform to develop an integrated superconducing quantum circuit combined with the superconducting coplanar waveguide and ferromagnetic π junctions.

Effect of the Surface Roughness of Electrode on the Charge Injection at the Pentacene/Electrode Interface (전극 표면의 거칠기가 펜터신/전극 경계면의 전류-전압 특성에 주는 영향)

  • Kim, Woo-Young;Jeon, D.
    • Journal of the Korean Vacuum Society
    • /
    • v.20 no.2
    • /
    • pp.93-99
    • /
    • 2011
  • We investigated how the surface roughness of electrode affects the charge injection at the pentacene/Au interface. After depositing Au film on the Si substrate by sputtering, we annealed the sample to control the Au surface roughness. Pentacene and Au top electrode were subsequently deposited to complete the sample. The nucleation density of pentacene was slightly higher on the rougher Au electrode, but surface morphologies of thick pentacene films were similar on both the as-prepared and the roughened Au electrodes. The current-voltage curves obtained from the Au/pentacene/Au structure measured as a function of temperature indicated that the interface barrier was higher for the rougher Au bottom-electrode. We propose that the higher barrier was caused by the lower work function of rougher electrode surface and the higher trap density at the interface.

Role of PEDOT:PSS in Doping Stability of Reduced Graphene Oxide/Single Walled Carbon Nanotubes-Based Tranparent Conductive Electrodes Hybrid Films with AuCl3 Doping

  • Lee, Byeong-Ryong;Kim, Su-Jin;Kim, Hui-Dong;Yun, Min-Ju;Jeon, Dong-Su;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.383-383
    • /
    • 2014
  • 최근 디스플레이, 태양전지 그리고 touch screen panels 등 optoelectronic 장치의 시장이 성장함에 따라 투명전극의 수요가 증가하고 있다. Indium tin oxide (ITO)의 좋은 특성 때문에 주로 투명전극에 많이 사용되고 있다. 그러나 화학적 안정성이 떨어지고, 휘어질 때 특성저하가 심하여 금속나노와이어, 탄소나노튜브, 전도성폴리머, 그리고 그래핀 등의 다른 투명전극의 연구가 활발히 진행되고 있다. 그 중에서 그래핀은 높은 전자 이동도(200000 cm2v-1s-1)와 휘어져도 전기적 크게 변하지 않는 특성 때문에 유망한 투명 전도성 전극 (Transparent Conductive Electrodes, TCEs)으로 연구되어왔다. 또한 다양한 속성 가운데, 높은 광 투과성은 그래핀의 가장 큰 장점이다 [1]. 최근, 화학 기상 증착 (Chemical Vapor Deposition, CVD) 등 다양한 제조 방법이 대량 생산을 위해 개발되었다. 그러나 이 방법은 비용이 많이 들며, 과정이 상당히 복잡하고 높은 온도 (${\sim}1000^{\circ}C$)를 필요로 한다. 따라서 용매 기반의 환원된 그래핀 산화물(Reduced Graphene Oxides, RGOs)이 최근 주목 받고 있다. 그러나 RGOs의 면저항이 높아 전극으로서 사용이 제한된다. 따라서 전기적 특성을 향상시키는 방법으로 단일 벽 탄소 나노튜브 (Single-Walled Carbon Nanotubes, SWNTs)를 혼합하거나 화학적 도핑을 통하여 면저항을 크게 향상시키는 연구가 활발히 진행되고 있다. 그러나 이런 화학적 도핑의 경우 박막이 공기 중에 직접 산소나 습기와 반응하여 전기적 특성이 저하되는 문제점을 가지고 있다 [2]. 이러한 문제를 해결하기 위해 AuCl3을 도핑한 박막에 내열성 및 내광성 등의 화학적 안정성이 뛰어난 PEDOT:PSS를 코팅하여 필름의 공기중의 노출을 막아 줌으로써 도핑의 안전성 및 전기적 특성을 최적화하였다. 본 연구에서는 간단한 dip-coating방법을 사용하여 4개의 RGO/SWNTs 박막을 흡착하였다. 다음으로 AuCl3를 도핑하여 면저항 $4.909K{\Omega}$, $4.381K{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. 그리고 필름의 도핑 안전성을 향상 시키기 위해 AuCl3를 도핑한 필름 위에 전도성 폴리머 PEDOT:PSS 코팅하여 면저항 $886.1{\Omega}$, $837.5{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. AuCl3 도핑된 필름의 경우 공기 중에 150시간 노출 시 72%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 5%의 면저항 증가가 나타나 확연한 차이를 보였다. 또한 AuCl3 도핑한 필름의 경우 $150^{\circ}C$에서 60시간동안 공기중에 노출되었을 때 525%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 58%의 면저항 증가를 나타내었다. 이것은 PEDOT:PSS가 passivation역할을 하여 필름이 공기에 노출된 부분을 막아주어 도핑된 필름의 면저항의 변화를 줄여 주었음을 알 수 있다.

  • PDF

Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

  • Lee, Seung-Hoon;Shin, Muncheol;Hwang, Seongpil;Park, Sung Heum;Jang, Jae-Won
    • Bulletin of the Korean Chemical Society
    • /
    • v.34 no.6
    • /
    • pp.1845-1847
    • /
    • 2013
  • The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.