• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.31-43
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• 2019

In this study, polymer elastic bumps were fabricated for the flexible electronic package flip chip bonding and the viscoelastic and viscoplastic behavior of the polymer elastic bumps according to the temperature and load were analyzed using FEM and experiments. The polymer elastic bump is easy to deform by the bonding load, and it is confirmed that the bump height flatness problem is easily compensated and the stress concentration on thin chip is reduced remarkably. We also develop a spiral cap type and spoke cap type polymer elastic bump of $200{\mu}m$ diameter to complement Au metal cap crack phenomenon caused by excessive deformation of polymer elastic bump. The proposed polymer elastic bumps could reduce stress of metal wiring during bump deformation compared to metal cap bump, which is completely covered with metal wiring because the metal wiring on these bumps is partially patterned and easily deformable pattern. The spoke cap bump shows the lowest stress concentration in the metal wiring while maintaining the low contact resistance because the contact area between bump and pad was wider than that of the spiral cap bump.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.10a
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• pp.7-38
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• 2000

Performance, reliability, form factor drive flip chip use. BGAs and CSPs will provide stepping stone to FC DCA .Growing vendor infrastructure - Low cost, high density organic substrates -New generations of fluxes and underfills .Adhesives flip chip technology as a low cost flip chip alternatives -Low cost Au stud or Electroless Ni bumps -Reliable thermal cycling and electrical performance.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.155-161
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• 2018

A Si chip with the Cu/Au bumps of $100-{\mu}m$ diameter was flip-chip bonded using different anisotropic conductive adhesives (ACAs) onto the local stiffness-variant stretchable substrate consisting of polydimethylsiloxane (PDMS) and flexible printed circuit board (FPCB). The average contact resistances of the flip-chip joints processed with ACAs containing different conductive particles were evaluated and compared. The specimen, which was flip-chip bonded using the ACA with Au-coated polymer balls as conductive particles, exhibited a contact resistance of $43.2m{\Omega}$. The contact resistance of the Si chip, which was flip-chip processed with the ACA containing SnBi solder particles, was measured as $36.2m{\Omega}$, On the contrary, an electric open occurred for the sample bonded using the ACA with Ni particles, which was attributed to the formation of flip-chip joints without any entrapped Ni particles because of the least amount of Ni particles in the ACA.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.74-79
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• 2000

In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.750-760
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• 2002

In this study, three solders, Sn-37Pb, Sn-3.5Ag, and Sn-3.8Ag-0.7Cu were screen printed on both electroless Ni/Au and OSP metal finished micro-via PCBs (Printed Circuit Boards). The interfacial reaction between PCB metal pad finish materials and solder materials, and its effects on the solder bump joint mechanical reliability were investigated. The lead free solders formed a large amount of intermetallic compounds (IMC) than Sn-37Pb on both electroless Ni/Au and OSP (Organic Solderabilty Preservatives) finished PCBs during solder reflows because of the higher Sn content and higher reflow temperature. For OSP finish, scallop-like $Cu_{6}$ /$Sn_{5}$ and planar $Cu_3$Sn intermetallic compounds (IMC) were formed, and fracture occurred 100% within the solder regardless of reflow numbers and solder materials. Bump shear strength of lead free solders showed higher value than that of Sn-37Pb solder, because lead free solders are usually harder than eutectic Sn-37Pb solder. For Ni/Au finish, polygonal shaped $Ni_3$$Sn_4$ IMC and P-rich Ni layer were formed, and a brittle fracture at the Ni-Sn IMC layer or the interface between Ni-Sn intermetallic and P-rich Ni layer was observed after several reflows. Therefore, bump shear strength values of the Ni/Au finish are relatively lower than those of OSP finish. Especially, spalled IMCs at Sn-3.5Ag interface was observed after several reflow times. And, for the Sn-3.8Ag-0.7Cu solder case, the ternary Sn-Ni-Cu IMCs were observed. As a result, it was found that OSP finished PCB was a better choice for solders on PCB in terms of flip chip mechanical reliability.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.

• Journal of Welding and Joining
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• v.21 no.5
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• pp.534-539
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• 2003

An efficient soldering process using the longitudinal ultrasonic vibration is introduced in this work for electronic packaging. The effects of the process parameters such as the ultrasonic frequency, amplitude, dimension of the metal bump and solder are analyzed through a viscoelastic lumped model. The viscoelastic properties of the eutectic solder were measured for calculation and evaluation of heat generation capability of the solder. Experiments were conducted to verify the possibility of the proposed ultrasonic soldering method by inserting the Cu and Au bumps into the solder block. Localized heating due to ultrasonic vibration melts the solder near the metal bump, which demonstrates the applicability of the ultrasonic soldering method to the high-density electronic packaging.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.61-67
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• 2017

As transistor density increases rapidly, a heat flux from IC device rises at fast rate. Thermal issues raised by high heat flux cause IC's performance and reliability problems. To solve these thermal management problems, the conventional cooling methods of IC devices were reached their thermal limit. As a result, alternative cooling methods such as liquid heat pipe, thermoelectric cooler, thermal Si via and etc. are currently emerging. In this paper microchannel liquid cooling system with TSV was investigated. The effects of 2 coolants (DI water and ethylene glycol 70 wt%) and 3 metal bumps (Ag, Cu, Cr/Au/Cu) on cooling performance were studied, and the total heat flux of various coolant and bump cases were compared. Surface temperature of liquid cooling system was measured by infrared microscopy, and liquid flowing through microchannel was observed by fluorescence microscope. In the case of ethylene glycol 70 wt% at $200^{\circ}C$ heating temperature, the total heat flux was $2.42W/cm^2$ and most of total heat flux was from liquid cooling effect.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.13-21
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• 1999

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances resulting in a high performance and cost-competitive Packaging method. This paper describes the investigation of alternative low cost flip-chip mounting processes using electroless Ni/Au bump and anisotropic conductive adhesives/films as an interconnection material on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed and characterized in mechanical and metallurgical point of view. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with $Ni_3$P precipitation above $300^{\circ}C$ causes an increase of hardness and an increase of the intrinsic stress resulting in a reliability limitation. As an interconnection material, modified ACFs composed of nickel conductive fillers for electrical conductor and non-conductive inorganic fillers for modification of film properties such as coefficient of thermal expansion(CTE) and tensile strength were formulated for improved electrical and mechanical properties of ACF interconnection. The thermal fatigue life of ACA/F flip chip on organic board limited by the thermal expansion mismatch between the chip and the board could be increased by a modified ACA/F. Three ACF materials with different CTE values were prepared and bonded between Si chip and FR-4 board for the thermal strain measurement using moire interferometry. The thermal strain of ACF interconnection layer induced by temperature excursion of $80^{\circ}C$ was decreased with decreasing CTEs of ACF materials.