• 제목/요약/키워드: Au Ni-Sn system

검색결과 11건 처리시간 0.027초

액상 Au-Sn 솔더와 Ni 기판의 계면현상에 대한 고찰 (Interfacial Microstructure Evolution between Liquid Au-Sn Solder and Ni Substrate)

  • 김성수;김종훈;정상원;이혁모
    • 마이크로전자및패키징학회지
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    • 제11권3호
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    • pp.47-53
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    • 2004
  • 공정 Au-20Sn 솔더합금을 솔더링 시간과 온도를 달리하여 Ni위에서 솔더링하였다. 주사전자현미경 (SEM)을 사용하여 계면에 생성된 IMC의 조성, 상, 모양에 대해 조사하였다. 계면에는 $(Au,Ni)_3Sn_2$$(Au,Ni)_3Sn_2$의 두 가지 IMC가 생성되었다. 그 중 첫 번째 생성된 IMC인 $(Au,Ni)_3Sn_2$상은 솔더링 온도에 따라 모양의 변화가 관찰되었다. 이러한 모양의 변화로 인한 확산통로수의 변화는 모든 솔더링 온도에서 거의 비슷한 IMC 두께를 가지도록 한다. IMC, $(Au,Ni)_3Sn_2$상의 모양변화는 온도 증가에 의한 생성엔탈피의 감소 때문인데, 이는 Jackson's parameter로써 잘 설명될 수 있다.

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고집적 플립 칩용 극미세 58Bi-42Sn 솔더 범프와 Au/Ni/Ti UBM의 계면 반응 (Interfacial Reaction between Ultra-Small 58Bi-42Sn Solder Bump and Au/Ni/Ti UBM for Ultra-Fine Flip Chip Application)

  • 강운병;정윤;김영호
    • 마이크로전자및패키징학회지
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    • 제10권2호
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    • pp.61-67
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    • 2003
  • 고집적 플립 칩 기술을 위한 $50{\mu}m$ 직경의 극미세 58Bi-42Sn 솔더 범프와 Au/Ni/Ti UBM의 계면 반응에 따른 금속간 화합물을 분석하였다. 증발증착법과 lift-off 방법으로 극미세 Bi-Sn 솔더 범프를 형성하고 급속열처리 장비를 이용하여 리플로 공정을 실시하였다. 리플로 공정에서의 냉각속도를 변화시키면서 제작한 솔더 범프의 표면과 단면을 주사전자현미경으로 관찰하였다 $Au(0.1{\mu}m)$/Ni/Ti UBM 위의 극미세 58Bi-42Sn 솔더 범프의 표면과 내부에서 facet 특성을 갖는 다각형의 금속간 화합물들이 다수 관찰되었다. 주사전자현미경의 EDS 분석과 X-선 회절분석으로 확인한 결과 이 금속간 화합물은 $(Au_xBi_yNi_{1-x-y})Sn_2$상임을 확인하였다.

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극미세 Bi-Sn 솔더 범프와 UBM과의 계면반응

  • 강운병;김영호
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.68-71
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    • 2003
  • The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

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유도가열에 의한 Sn-3.5Ag 솔더 범프의 접합 특성에 관한 기초연구 (Joining characteristics of Sn-3.5Ag solder bump by induction heating)

  • 최준기;방희선;;방한서
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2006년 추계학술발표대회 개요집
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    • pp.181-183
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    • 2006
  • This paper studies the mechanical behaviors of Sn-3.5Ag solder joint against substrate(such as Au/Ni/Cu, Au/cu, Ni/Cu and Cu pad) after induction heating, a new soldering method. It was found that the solder bump formation depends on the time and current of the induction heating system. Also the heating value of the solder bump were found to vary with respect to the thermal conductivity of the pads on the substrate. In case of Au/Ni/Cu pad and Au/Cu pad, solder bump's shear strength were high for the heating time of $1.5{\sim}2sec$. For Ni/Cu pad, solder bump's shear strength were found to increase with time increment.

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DEVELOPMENT OF SN BASED MULTI COMPONENT SOLDER BALLS WITH CD CORE FOR BGA PACKAGE

  • Sakatani, Shigeaki;Kohara, Yasuhiro;Uenishi, Keisuke;Kobayashi, Kojiro F.;Yamamoto, Masaharu
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.450-455
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    • 2002
  • Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

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무전해 Ni-P UBM과 95.5Sn-4.0Ag-0.5Cu 솔더와의 계면반응 및 신뢰성에 대한 연구 (A study on the interfacial reactions between electroless Ni-P UBM and 95.5Sn-4.0Ag-0.5Cu solder bump)

  • 전영두;백경욱
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.85-91
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    • 2002
  • Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

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솔더 층의 증착 순서에 따른 저 융점 극 미세 솔더 범프의 볼 형성에 관한 연구 (Formation of Low Temperature and Ultra-Small Solder Bumps with Different Sequences of Solder Layer Deposition)

  • 진정기;강운병;김영호
    • 마이크로전자및패키징학회지
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    • 제8권1호
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    • pp.45-51
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    • 2001
  • UBM층과의 젖음 특성 및 표면 산화정도가 미세 피치를 갖는 저 융점 솔더 범프의 볼 형성에 미치는 영향을 연구하였다. Au/Cu/Cr 과 Au/Ni/Ti UBM 위에 공정 조성에 가까운 In-Ag와 공정 조성의 Bi-Sn 솔더를 솔더 층의 증착 순서를 달리하여 증발 증착한 후 lift-off 공정과 열처리 공정을 사용하여 솔더 범프를 형성하였다. In-Ag솔더의 경우 In이 UBM 층과 접한 범프가, 또한 Bi-Sn 솔더의 경우 Sn을 먼저 UBM층위에 먼저 증착시켜 리플로 한 범프가 솔더 볼 형성 경향이 다른 범프에 비해 높았다. 구형의 솔더 범프 형성 정도는 UBM 층과의 젖음 특성에 따라 크게 달라졌다.

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PCB Pad finish 방법에 따른 solder의 Board level joint reliability (Board level joint reliability of differently finished PWB pad)

  • 이왕주
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2004년도 국제표면실장 및 인쇄회로기판 생산기자재전:전자패키지기술세미나
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    • pp.37-59
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    • 2004
  • In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

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The Wetting Properties of UBM-coated Si-wafer to the Lead-free Solders in Si-wafer/Bumps/Glass Flip-Chip Bonding System

  • Hong, Soon-Min;Park, Jae-Yong;Park, Chang-Bae;Jung, Jae-Pil;Kang, Choon-Sik
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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    • pp.74-79
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    • 2000
  • In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.

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Highly Productive Process Technologies of Cantilever-type Microprobe Arrays for Wafer Level Chip Testing

  • Lim, Jae-Hwan;Ryu, Jee-Youl;Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.63-66
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    • 2013
  • This paper describes the highly productive process technologies of microprobe arrays, which were used for a probe card to test a Dynamic Random Access Memory (DRAM) chip with fine pitch pads. Cantilever-type microprobe arrays were fabricated using conventional micro-electro-mechanical system (MEMS) process technologies. Bonding material, gold-tin (Au-Sn) paste, was used to bond the Ni-Co alloy microprobes to the ceramic space transformer. The electrical and mechanical characteristics of a probe card with fabricated microprobes were measured by a conventional probe card tester. A probe card assembled with the fabricated microprobes showed good x-y alignment and planarity errors within ${\pm}5{\mu}m$ and ${\pm}10{\mu}m$, respectively. In addition, the average leakage current and contact resistance were approximately 1.04 nA and 0.054 ohm, respectively. The proposed highly productive microprobes can be applied to a MEMS probe card, to test a DRAM chip with fine pitch pads.