• 제목/요약/키워드: Au/Sn eutectic bonding

검색결과 14건 처리시간 0.02초

Sn-Bi도금 $Sn-3.5\%Ag$ 솔더를 이용한 Capacitor의 저온 솔더링 (Lower Temperature Soldering of Capacitor Using Sn-Bi Coated $Sn-3.5\%Ag$ Solder)

  • 김미진;조선연;김숙환;정재필
    • Journal of Welding and Joining
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    • 제23권3호
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    • pp.61-67
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    • 2005
  • Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

Protrusion Jaw가 적용된 볼 당김시험을 이용한 솔더 접합부의 강도와 파괴 메커니즘 분석에 관한 연구 (Evaluation of Pull Strengths and Fracture Modes of Solder Joino by Modified Ball Pull Testing with Protrusion Jaw)

  • 김형일;한성원;김종민;최명기;신영의
    • Journal of Welding and Joining
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    • 제23권4호
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    • pp.34-40
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    • 2005
  • There have been numerous approaches to examine the bonding strengths of solder joints. However, despite the technical and practical limitations, the precedent test methods such as the ball shear and ball pull tests are being used in industrial applications. In this study, the optimum jaw pressure with the modified protrusion jaw was introduced in order to obtain higher successful rate f3r ball pull testing. Furthermore, the pull strengths and fracture modes of Sn-8Zn-3Bi, Sn-4Ag-0.7Cu, and Sn-37Pb eutectic solder after isothermal aging tests ($100^{\circ}C,\;150^{\circ}C$), were evaluated with the protrusion jaw. The pull strength-displacement hysteresis curves and fracture surfaces were carefully investigated to evaluate the correlation between the pull strengths and the fracture modes of each solder. In conclusion, it is verified that Au-Zn IMCs (Intermetallic Compounds) have a detrimental effect on the pull strengths and changed fracture modes of Sn-8Zn-3Bi solder. Meanwhile, the microstructure transformation influences the degradation of pull strengths of Sn-4Ag-0.7Cu and Sn-37Pb solders.

MEMS 패키징에서 구리 Via 홀의 기계적 신뢰성에 관한 연구 (Mechanical Reliability Issues of Copper Via Hole in MEMS Packaging)

  • 좌성훈
    • 마이크로전자및패키징학회지
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    • 제15권2호
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    • pp.29-36
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    • 2008
  • 본 연구에서는 MEMS 소자의 직접화 및 소형화에 필수적인 through-wafer via interconnect의 신뢰성 문제를 연구하였다. 이를 위하여 Au-Sn eutectic 접합 기술을 이용하여 밀봉(hermetic) 접합을 한 웨이퍼 레벨 MEMS 패키지 소자를 개발하였으며, 전기도금법을 이용하여 수직 through-hole via 내부를 구리로 충전함으로써 전기적 연결을 시도하였다. 제작된 MEMS 패키지의 크기는 $1mm{\times}1mm{\times}700{\mu}m$이었다. 제작된 MEMS패키지의 신뢰성 수행 결과 비아 홀(via hole)주변의 크랙 발생으로 패키지의 파손이 발생하였다. 구리 through-via의 기계적 신뢰성에 영향을 줄 수 있는 여러 인자들에 대해서 수치적 해석 및 실험적인 연구를 수행하였다. 분석 결과 via hole의 크랙을 발생시킬 수 있는 파괴 인자로서 열팽창 계수의 차이, 비아 홀의 형상, 구리 확산 현상 등이 있었다. 궁극적으로 구리 확산을 방지하고, 전기도금 공정의 접합력을 향상시킬 수 있는 새로운 공정 방식을 적용함으로써 비아 홀 크랙으로 인한 패키지의 파괴를 개선할 수 있었다.

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웨이퍼 레벨 진공 패키징 비냉각형 마이크로볼로미터 열화상 센서 개발 (Uncooled Microbolometer FPA Sensor with Wafer-Level Vacuum Packaging)

  • 안미숙;한용희
    • 센서학회지
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    • 제27권5호
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    • pp.300-305
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    • 2018
  • The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.