• Progress in Superconductivity and Cryogenics
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• v.11 no.4
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• pp.16-19
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• 2009

The influence of nanorods grown on substrate prior to YBCO deposition has been investigated. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-\delta}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as one of the possible pinning centers. The growth density of ZnO nanorods was modulated through Au nanoparticles synthesized on top of the STO(100) substrates with self assembled monolayer. The density of Au nanoparticles is approximately $240{\sim}260\;{\mu}m^{-2}$ with diameters of 41~49 nm. ZnO nanorods were grown on Au nanoparticles by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6\;{\mu}m$ in length respectively. The ZnO nanorods have apparently randomly aligned and exhibit single-crystal nature along (0002) growth direction. Our preliminary results indicate that YBCO film deposited directly on STO substrate shows the c-axis orientation while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.291-291
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• 2009

ZnS:Mn/Cu,Cl 계 나노 형광체의 특성을 살펴보았다. 실험에서는 ZnS:Mn 과 ZnS:Cu,Cl 형광체 파우더를 이용하여 밀링을 통하여 분쇄하여 EL 소자를 제작하였다. 형광체 파우더를 볼밀에 $\Phi5mm$의 지르코나이 볼과 에탄올과 함께 넣고 2, 4, 6, 8, 10일간 밀링을 하였다. 밀링한 형광체 파우더를 SEM을 통하여 파우더의 사이즈를 관찰하였다. 또 이 파우더를 이용하여 EL 소자를 제작하였다. 소자의 구조는 기판은 알루미나 기판을, 하부 전극은 Au, 유전체는 $BaTiO_3$ 유전체 페이스트를 사용하였으며, 형광체 적층 후 ITO 전극을 스퍼터를 이용하여 증착하여 제작하였다. 제작한 소자를 이용하여 소자의 휘도 등 발광 특성을 살펴보았다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Journal of the Korean Chemical Society
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• v.12 no.2
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• pp.47-50
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• 1968

Two methods for separation of the impurities from bismuth metal have been found by the use of Dowex $1{\times}4,$ anion exchange resins. The first method is that Dowex $1{\times}4$ resins are packed into the two stage columns (height of under stage is 22cm and upper stage is 3cm, and diameter of columns are 1.5cm), and the impurities of Pb(II), Ag(I) and Cu(II) are separated by the eluent of 7.5M HCl soln, Zn(II), Fe(III) by 0.5M HCl solns, and Te(IV) in the upper stage by 2M NaOH soln. Remained Au(III) in the upper stage is determined by the ignition with resins. The 2nd method is that for the separation of all the impurities simultaneously the same resins are packed into single stage column(height is 10cm and diameter is 1.5cm), and all the impurities of Pb(II), Zn(II), Cu(II), Fe(III) and Ag(I) are eluted by the eluent of 0.5M HCl soln. Separated impurities are determined by the colorimetry.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.57-57
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• 2000

Brazing characteristics of the LTCC(Low Temperature Co-fired Ceramics)/ Kovar(Fe-Ni-Co alloy) was investigated. Kovar is one of the typical material for the lid of MCM and packages. In case of alumina package, Brazing process is done by higher temperature profile than 800 $^{\circ}C$ and Ag-Cu alloy. But, LTCC has sintering temperature near 850 $^{\circ}C$. So, it is difficult to use the same process as alumina brazing. The adhesion strength of the brazed part is affected by brazing alloy and metallization properties between conductor pattern and LTCC material. We investigated brazing characteristics of the LTCC/Kovar using various brazing alloys(Ag-Cu, Au-Sn) and process conditions. And, we examined the influence of the glass contents in conductor on the brazing characteristics of the LTCC/Kovar.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.237-242
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• 2011

The effect of shearing speed on the shear force and energy of Sn-0Ag-0.5Cu solder ball was investigated. Various UBM (under bump metallurgy)'s on Cu pads were used such as ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold; Ni/Pd/Au), ENIG (Electroless Nickel, Immersion Gold; Ni/Au), OSP (Organic Solderability Preservative). To fabricate a shear test specimen, a solder ball, $300{\mu}m$ in diameter, was soldered on a pad of FR4 PCB (printed circuit board) by a reflow soldering machine at $245^{\circ}C$. The solder bump on the PCB was shear tested by changing the shearing speed from 0.01 m/s to 3.0 m/s. As experimental results, the shear force increased with a shearing speed of up to 0.6 m/s for the ENIG and the OSP pads, and up to 0 m/s for the ENEPIG pad. The shear energy increased with a shearing speed up to 0.3 m/s for the ENIG and the OSP pads, and up to 0.6 m/s for the ENEPIG pad. With a high shear speed of over 0 m/s, the ENEPIG showed a higher shear force and energy than those of the ENIG and OSP. The fracture surfaces of the shear tested specimens were analyzed, and the fracture modes were found to have closer relationship with the shear energy than the shear force.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.317.2-317.2
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• 2007

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.99-107
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• 2001

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.473-474
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• 2012