• 제목/요약/키워드: Atomistic process

검색결과 22건 처리시간 0.023초

탄소 나노튜브 내부에 삽입된 칼륨 구조 (Structural Phases of Potassium Intercalated into Carbon Nanotubes)

  • 변기량;강정원;송기오;최원영;황호정
    • 한국전기전자재료학회논문지
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    • 제17권3호
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    • pp.249-258
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    • 2004
  • We investigated structural phases of potassium intercalated into carbon nanotubes using a structural optimization process applied to atomistic simulation methods. As the radius of carbon nanotubes increased, structures were found in various phases from an atomistic strand to multishell packs composed of coaxial cylindrical shells and in helical, layed, and crystalline structures. Numbers of helical atom rows composed of coaxial tubes and orthogonal vectors of a circular rolling of a triangular network could explain multishell phases of potassium in carbon nanotubes.

나노스케일 재료 변형 거동을 위한 새로운 멀티스케일 접근법 (A New Approach of Multi-Scale Simulation for Investigating Nano-Scale Material Deformation Behavior)

  • 박준영
    • 한국기계가공학회지
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    • 제8권1호
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    • pp.43-47
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    • 2009
  • Recently, an approach for nano-scale material deformation has been developed that couples the atomistic and continuum approaches using Finite Element Method (FEM) and Molecular Dynamics (MD). However, this approach still has problems to connect two approaches because of the difference of basic assumptions, continuum and atomistic modeling. To solve this problem, an alternative way is developed that connects the QuasiMolecular Dynamics (QMD) and molecular dynamics. In this paper, we suggest the way to make and validate the MD-QMD coupled model.

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Chemical Mechanical Polishing 공정에 관한 원자단위 반응 모델링 (Atomic Scale Modeling of Chemical Mechanical Polishing Process)

  • 변기량;강정원;송기오;황호정
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.414-422
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    • 2005
  • This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

MEMS 부품 제조를 위한 나노 리소그래피 공정의 3차원 분자동력학 해석 (Three Dimensional Molecular Dynamics Simulation of Nano-Lithography Process for Fabrication of Nanocomponents in Micro Electro Mechanical Systems (MEMS) Applications)

  • 김영석;이승섭;나경환;손현성;김진
    • 대한기계학회논문집A
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    • 제27권10호
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    • pp.1754-1761
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    • 2003
  • The atomic force microscopy (AFM) based lithographic technique has been used directly to machine material surface and fabricate nano components in MEMS (micro electro mechanical system). In this paper, three-dimensional molecular dynamics (MD) simulations have been conducted to evaluate the characteristic of deformation process at atomistic scale for nano-lithography process. Effects of specific combinations of crystal orientations and cutting directions on the nature of atomistic deformation were investigated. The interatomic force between diamond tool and workpiece of copper material was assumed to be derived from the Morse potential function. The variation of tool geometry and cutting depth was also evaluated and the effect on machinability was investigated. The result of the simulation shows that crystal plane and cutting direction significantly influenced the variation of the cutting forces and the nature of deformation ahead of the tool as well as the surface deformation of the machined surface.

금속 덩어리 증착 및 금속 나노와이어에 관한 원자단위 이론 연구 (Atomistic Study of Metal Cluster Deposition and Nanowires)

  • 강정원;이강환;황호정
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.21-24
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    • 2001
  • We studied aluminum cluster deposition using molecular dynamics simulation. We investigated the variations of the cluster momentum and the impulse force during collisions, and found that the close-packed cluster impact has some of properties of the single particle collision and the linear chain collisions. We also simulated the series of energetic cluster deposition with energy Per atom. When energy Per atom in cluster has some eV rather than very low, the intermixing occurred easily in growth film and we can obtain a good film without subsequent annealing process.

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INVESTIGATION OF ENERGETIC DEPOSITION OF Au/Au (001) THIN FILMS BY COMPUTER SIMULATION

  • Zhang, Q. Y.;Pan, Z. Y.;Zhao, G. O.
    • 한국진공학회지
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    • 제7권s1호
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    • pp.183-189
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    • 1998
  • A new computer simulation method for film growth, the kinetic Monte Carlo simulation in combination with the results obtained from molecular dynamics simulation for the transient process induced by deposited atoms, was developed. The behavior of energetic atom in Au/Au(100) thin film deposition was investigated by the method. The atomistic mechanism of energetic atom deposition that led to the smoothness enhancement and the relationship between the role of transient process and film growth mechanism were discussed. We found that energetic atoms cannot affect the film growth mode in layer-by-layer at high temperature. However, at temperature of film growth in 3-dimensional mode and in quasi-two-dimensional mode, energetic atoms can enhance the smoothness of film surface. The enhancement of smoothness is caused by the transient mobility of energetic atoms and the suppression for the formation of 3-dimensional islands.

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Molecular Dynamics Study on Atomistic Details of the Melting of Solid Argon

  • Han, Joo-Hwan
    • 한국세라믹학회지
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    • 제44권8호
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    • pp.412-418
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    • 2007
  • The atomic scale details of the melting of solid argon were monitored with the aid of molecular dynamics simulations. The potential energy distribution is substantially disturbed by an increase in the interatomic distance and the random of set distance from the lattice points, with increasing temperature. The potential energy barriers between the lattice points decrease in magnitude with the temperature. Eventually, at the melting point, these barriers can be overcome by atoms that are excited with the entropy gain acquired when the atoms obtain rotational freedom in their atomic motion, and the rotational freedom leads to the collapse of the crystal structure. Furthermore, it was found that the surface of crystals plays an important role in the melting process: the surface eliminates the barrier for the nucleation of the liquid phase and facilitates the melting process. Moreover, the atomic structure of the surface varies with increasing temperature, first via surface roughening and then, before the bulk melts, via surface melting.

분자동역학을 이용한 다공성 물질 건조공정 멀티스케일 시뮬레이션(2부: 미시 물성) (Multi-scale simulation of drying process for porous materials using molecular dynamics (part 2: material properties))

  • 백성민;금영탁
    • 한국결정성장학회지
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    • 제15권4호
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    • pp.162-167
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    • 2005
  • 건조공정 중인 다공성 물질의 물성은 재료의 비균질성 즉 전위, 입자, 입계, 균열, 기공과 같은 미시적인 결함인자들의 영향을 받는다. 따라서 다공성 물질의 건조공정을 전산 시뮬레이션하기 위해서는 원자 스케일 해석을 통한 미시적 물성을 알아야 한다. 본 연구에서는 분자동역학 시뮬레이션을 이용하여 원자 모델을 구성하고 원자 상호간 거동을 예측하여 재료의 미시적 물성을 계산하였다. 이렇게 구한 탄성계수, 열팽창계수, 체적 열용량은 실험 및 이론에 기초한 결과들과 비교하여 검증하였다.

Pd-SiC 쇼트키 다이오드의 수소 가스 감지 특성 (A Study on a Palladium-Silicon Garbide Schottky Diode as a Hydrogen Gas Sensor)

  • 이주헌;이영환;김창교;조남인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.858-860
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    • 1998
  • A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

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