• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.196-196
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• 2014

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어할 수 있는 원자층 식각 기술이 개발되었다. 3-5족 반도체 소자의 Interface Passivation Layer 로 이용되는 $Al_2O_3$ 와 BeO 의 원자층 식각을 하였으며, 각각의 원자층 식각 조건과 식각 후의 표면 거칠기 변화에 대한 영향을 확인 할 수 있었다.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.2
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• pp.227-234
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• 2019

A user-friendly modeling interface is developed for a process-based total system performance assessment framework (APro) specialized for a generic geological disposal system for high-level radioactive waste. The APro modeling interface is constructed using MATLAB, and the operator splitting scheme is used to combine COMSOL for simulation of multiphysics and PHREEQC for the calculation of geochemical reactions. As APro limits the modeling domain to the generic disposal system, the degree of freedom of the model is low. In contrast, the user-friendliness of the model is improved. Thermal, hydraulic, mechanical and chemical processes considered in the disposal system are modularized, and users can select one of multiple modules: "Default process" and multi "Alternative process". APro mainly consists of an input data part and calculation execution part. The input data are prepared in a single EXCEL file with a given format, and the calculation part is coded using MATLAB. The final results of the calculation are created as an independent COMSOL file for further analysis.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.656-658
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• 2005

KAERI (Korea Atomic Energy Research Institute) has been performing the project named PEFP (proton engineering frontier project). PEFP has been performing the project of a high power proton accelerator. Control system for 20 MeV proton accelerating structure has developed. We use the EPICS(Experimental Physics and Industrial Control System) tool kit as a foundation of the control system. EPICS is adopted for control systems which have OPI(OPerator Interface) and IOqlnput Output Controller). We have performed the PEPF control system on SUN workstation host computer. In this paper, we present the vacuum monitor, RFQ, and DTL Turbo pump control system.

• Nuclear Engineering and Technology
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• v.30 no.4
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• pp.298-307
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• 1998

In order to design mutual communication between a distributed control system and a function test facility, we used the Inter-Process Communication(IPC) in two systems and Transmission Control Protocol/Internet Protocol(TCP/IP) protocol. The data from the function test facility are put in the shared memory using an IPC, which is then accessed by the distributed control system through an Application Program Interface(API). The server in the function test facility includes two processes(one for sending and one for receiving), which are generated by the fork function from the client signal. The client in the distributed control system includes two separate programs(one for receiving and one for sending).

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.92-98
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• 2006

Molecular dynamics simulations were performed to study interface structures between an $Al_2O_3$ crystalline phase and a interface phase of $CaAl_2Si_2O_8$. We calculated atomic structures and excess interface energies in systems with different thicknesses of the interface film. It was found that excess interface energies at first readily decreased with increasing film thickness, but increased for larger thicknesses of more than 2 nm. The excess energies of $Al_2O_3/CaAl_2Si_2O_8$ interfaces exhibit a minimum at a thickness around 1 nm. In this range of film thicknesses, the atoms in the interface film show a short-range ordered structure and slow diffusion rather than the random structure and rapid diffusion expected to an observation of an equilibrium thickness for interface films in ceramics.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.273-276
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• 2008

In this study, microstructure and distribution of alloy elements were investigated in thermo-mechanically processed C-Mn-Si transformation induced plasticity (TRIP) steels. The microstructures of TRIP steels were investigated by using advanced analysis techniques, such as three dimensional atom probe tomography (3D-APT). At first, the microstructure was observed by using TEM. TEM results revealed that microstructure of C-Mn-Si TRIP steel was composed of ferrite, bainte, and retained austenite. 3D-APT was used to characterize atomic-scale partitioning of added elements at the phase interface. In the retained austenite phase, Ti and B were enriched with C. However, there was no fluctuation of Mn and Si concentration across the interface. Through these analysis techniques, the advanced characteristics of constituent microstructure in C-Mn-Si TRIP steels were identified.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.125-125
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• 2012

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.29-36
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• 1991

Pressurized Water Reactor (PWR) pressure vessels are made of forged low alloy steel plates internally clad with an austenitic stainless steel by welding to improve anti-corrosion properties. They display a characteristic behavior of dissimilar metal weld interface during post weld heat treatment (PWHT) and service at high temperature and pressure. In this Study, Metallugical structure of weld interface of SA 508 Class 3 forged steel clad with 309L, Austenitic stainless steel after PWHT was investigated. To estimate the width of the carburized/decarburized bands quantitatively, a model for carbon diffusion was proposed and a theoretical equation was derived.

• Tribology and Lubricants
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• v.25 no.2
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• pp.81-85
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• 2009

Interests in micro/nano-particles have been greatly increasing due to their wide applications in various fields such as environmental and medical sciences as well as engineering. In order to obtain a fundamental understanding of the tribological characteristics at particle-surface contact interface, frictional behaviors according to load/pressure and materials were obtained by using atomic force microscope(AFM) cantilevers with different stiffnesses and tips. Lateral contact stiffnesses were observed in various tip-surface contact situations. Experimental results show that stick-slip friction behavior occurs even when the colloidal probes with a particle of a few micrometers in diameter, which have a relatively large contact area and lack a well-shaped apex, were used. This indicates that atomic stick-slip friction may be a more common phenomenon than it is currently thought to be. Also, experimental results were investigated by considering the competition between the stiffness of the interatomic potential across the interface and the elastic stiffnesses of the contacting materials and the force sensor itself.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.77.1-77.1
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• 2012

Zn 기반 산화물 반도체는 기존의 비정질 Si에 비해 저온공정에도 불구하고 높은 이동도, 투명하다는 장점으로 인해 차세대 디스플레이용 백플레인 소자로 주목받고 있다. 산화물 트랜지스터는 우수한 소자특성을 보여주고 있지만, 온도, 빛, 그리고 게이트 바이어스 스트레스에 의한 문턱전압의 불안정성이 문제의 문제를 해결해야한다. 산화물 반도체의 문턱전압의 불안정성은 유전체와 채널층의 계면 혹은 채널에서의 charge trap, photo-generated carrier, ads-/desorption of molecular 등의 원인으로 보고되고 있어, 고신뢰성의 산화물 채널층을 성장하기 위한 노력이 이루어지고 있다. 최근, 산화물 트랜지스터의 다양한 조건에서의 문턱전압의 불안정성을 해결하기 위해 산화물의 주된 결함으로 일컬어지고 있는 산소결핍을 억제하기 위해 성장공정의 제어 그리고, 산소와의 높은 binding energy를 같은 Al, Hf, Si 등과 같은 원소를 첨가하여 향상된 소자의 특성이 보고되고 있지만, 줄어든 산소공공으로 인해 이동도가 저하되는 문제점이 야기되고 있다. 이러한 문제점을 해결하기 위해, 최근에는 Buried layer의 삽입 혹은 bi-channel 등과 같은 방안들이 제안되고 있다. 본 연구는 atomic layer deposition을 이용하여 AZO bureid layer가 적용된 ZnO 트랜지스터의 특성과 안정성에 대한 연구를 하였다. 다결정 ZnO 채널은 유전체와의 계면에 많은 interface trap density로 인해 positive gate bias stress에 의한 문턱전압의 불안정성을 보였지만, AZO층이 적용된 ZnO 트랜지스터는 줄어든 interface trap density로 인해 향산된 stability를 보였다.