• Composites Research
• /
• v.30 no.1
• /
• pp.7-14
• /
• 2017

In this paper, the inter-lamina shear strength (ILSS) of multi-wall carbon nanotube (MWNT) reinforced carbon fiber reinforced plastics (CFRP) and thin-ply composites were verified under low earth orbit (LEO) space environment. CFRP, MWNT reinforced CFRP, thin-ply CFRP and MWNT reinforced thin-ply CFRP were tested after aging by using accelerated ground simulation equipment. The used ground simulation equipment can simulate high vacuum ($2.5{\times}10^{-6}torr$), atomic oxygen (AO, $9.15{\times}10^{14}atoms/cm^2{\cdot}s$), ultraviolet light (UV, 200 nm wave length) and thermal cycling ($-70{\sim}100^{\circ}C$) simultaneously. The duration of aging experiment was twenty hours, which is an equivalent duration to that of STS-4 space shuttle condition. After the aging experiment, ILSS were measured at room temperature ($27^{\circ}C$), high temperature ($100^{\circ}C$) and low temperature ($-100^{\circ}C$) to verify the effect of operation temperature. The MWNT and thin-ply shows good improvement of ILSS at ground condition especially with the thin-ply. And after LEO exposure large degradation of ILSS was observed at MWNT added composite due to the thermal cycle. And the degradation rate was much higher under the high temperature condition. But, at the low temperature condition, the ILSS was largely recovered due to the matrix toughening effect.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.452-452
• /
• 2011

Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

• Journal of Integrative Natural Science
• /
• v.10 no.3
• /
• pp.141-147
• /
• 2017

Vascular endothelial growth factor (VEGF) is an important signaling protein involved in angiogenesis, which is the formation of new blood vessels from pre-existing vessels. Consequently, blocking of the vascular endothelial growth factor receptor (VEGFR-2) by small molecule inhibitors leads to the inhibition of cancer induced angiogenesis. In this study, we performed a two dimensional quantitative structure activity relationship (2D-QSAR) study of 38 N-Phenyl-N'-{4-(4-quinolyloxy) phenyl} urea derivatives as VEGFR-2 inhibitors based on hologram quantitative structure-activity (HQSAR). The model developed showed reasonable $q^2=0.521$ and $r^2=0.932$ values indicating good predictive ability and reliability. The atomic contribution map analysis of most active compound (compound 7) indicates that hydrogen and oxygen atoms in the side chain of ring A and oxygen atom in side chain of ring C contributes positively to the activity of the compounds. The HQSAR model developed and the atomic contribution map can serve as a guideline in designing new compounds for VEGFR-2 inhibition.

• Nuclear Engineering and Technology
• /
• v.54 no.12
• /
• pp.4441-4448
• /
• 2022

The electrochemical oxidation process has been widely studied in the field of wastewater treatment for the decomposition of organic materials through oxidation using ·OH generated on the anode. Pt anode electrodes with high durability and long-term operability have a low oxygen evolution potential, making them unsuitable for electrochemical oxidation processes. Therefore, to apply Pt electrodes that are suitable for long-term operation and large-scale processes, it is necessary to develop a new method for improving the decomposition rate of organic materials. This study introduces a method to improve the decomposition rate of organic materials when using a Pt anode electrode in the electrochemical oxidation process for the treatment of organic decontamination liquid waste. Electrochemical decomposition tests were performed using sodium dodecylbenzenesulfonate (SDBS) as a representative organic material and a Pt mesh as the anode electrode. Y₂O₃ particles were introduced into the electrolytic cell to improve the decomposition rate. The decomposition rate significantly improved from 21% to 99%, and the current efficiency also improved. These results can be applied to the electrochemical oxidation process without additional system modification to enhance the decomposition rate and current efficiency.

• Journal of the Mineralogical Society of Korea
• /
• v.25 no.3
• /
• pp.155-162
• /
• 2012

We observed characteristic oxidation and dissolution phenomena induced by dissolved oxygen for mackinawite that is produced via sulfate-reducing bacteria (SRB) living in anaerobic environments such as soils and groundwater. We tried to recognize the role of the sulfide minerals that usually coexist with some stabilized radionuclides (e.g., reduced uranium), which can be reoxidized and redissolved by an oxygen-rich groundwater invaded into a contaminated area. The mackinawite produced by 'Desulfovibrio desulfuricans', a sulfate-reducing bacterium, was conducted to be dissolved for 2 weeks by some oxidants such as 'hydrogen peroxide' and 'sodium nitrite'. Although mineralogical oxidation and dissolution characteristics were different from each other according to the oxidants, the initially oxidized solution was early stabilized through the oxygen consumption by ${\mu}m$-sized sulfide particles and the resultant increase of sulfate in solution. From these results, we can anticipate that the large amount of sulfide minerals generated by SRB can not only repress the anoxic environment to be disturbed by the consumption of oxygen in groundwater, but also contribute to stabilize the reduced/precipitated radionuclides as a buffer material for a long time.

• Nuclear Engineering and Technology
• /
• v.31 no.3
• /
• pp.335-343
• /
• 1999

The effects of N $b_2$ $O_{5}$ and oxygen potential on the densification and grain growth of U $O_2$ fuel have been investigated.0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$fuel pellets were sintered at 1$700^{\circ}C$ for 4 hours in sintering atmospheres which have various ratios of $H_2O$ to $H_2$ gas. Compared with those of undoped U $O_2$ pellets, the sintered density and grain size of the 0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$ pellet increase under the $H_2O$/ $H_2$ gas ratio of 5.0$\times$10$^{-3}$ to 1.0$\times$10$^{-2}$ and under the $H_2O$/ $H_2$gas ratio of 5.0$\times$10$^{-3}$ to $1.5\times$10$^{-2}$ , respectively. The sintering of U $O_2$fuel pellets containing 0.1 wt% to 0.5 wt% N $b_2$ $O_{5}$ was carried out at 168$0^{\circ}C$ for 4 hours. The enhancing effect of N $b_2$ $O_{5}$ on the sintered density and grain size becomes larger as the N $b_2$ $O_{5}$ content increases. The solubility limit of N $b_2$ $O_{5}$ in U $O_{2}$ seems to be between 0.3 wt% and 0.5 wt%, and beyond the solubility limit the second phase whose composition corresponds near to N $b_2$U $O_{6}$ is precipitated on grain boundary. The enhancement of densification and grain growth in U $O_2$ is attributed to the increased concentration of a uranium vacancy which is formed by the interstitial N $b^{4+}$ ion in the U $O_2$ lattice.

• Analytical Science and Technology
• /
• v.16 no.2
• /
• pp.117-124
• /
• 2003

Oxygen to metal ratio has been measured by wet and dry chemical analysis to study the properties of sintered $UO_2$ pellets and $U_3O_8$ in the lithium reduction process of spent pressurized water reactor fuels. Uranium dioxide pellets simulated for the spent PWR fuels with burnup values of 20,000~60,000 MWd/MtU were prepared by mixing $UO_2$ powder and oxides of fission product elements, pelleting the powder mixture and sintering it at $1,700^{\circ}C$ under a hydrogen atmosphere. For wet chemical analysis, the simulated spent fuels were dissolved with mixed acid (10 M HCl : 8 M $HNO_3$, 2.5 : 1, v/v) using acid digestion bomb technique. The total amount of uranium and fission products added in the simulated spent fuels were measured using inductively coupled plasma atomic emission spectrometry. Weight change of the simulated fuel during its oxydation was measured by thermogravimetry and then the O/M ratio result was compared to that obtained by wet chemical analysis. Influence of $Mo_{0.4}-Ru_{0.4}-Rh_{0.1}-Pd_{0.1}$, quaternary alloy, on the determination of O/M ratio was investigated.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.14-21
• /
• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Journal of the Mineralogical Society of Korea
• /
• v.22 no.4
• /
• pp.343-352
• /
• 2009

High-resolution Solid-state NMR provides element specific and quantitative information and also resolves, otherwise overlapping atomic configurations in multi-component non-crystalline silicates. Here we report the preliminary results on the effect of composition on the structure of CMAS (CaO-MgO-$Al_2O_3-SiO_2$) silicate glasses, as a model system for basaltic magmas, using the high-resolution 1D and 2D solid-state NMR. The $^{27}Al$ MAS NMR spectra for the CMAS silicate glasses show that four-coordinated Al is predominant, demonstrating that $Al^{3+}$ is network forming cation. The peak position moves toward lower frequency about 4.7 ppm with increasing $X_{MgO}$ due to an increase in $Q^4$(4Si) fraction with increasing Si content, indicating that Al are surrounded only by bridging oxygen. $^{17}O$ MAS NMR spectra for $CaAl_2SiO_6$ and $CaMgSi_2O_6$ glasses qualitatively suggest that NBO fraction in the former is smaller than that in $CaMgSi_2O_6$ glasses. As $^{17}O$ 3QMAS NMR spectrum of model quaternary aluminosilicate glass resolved distinct bridging and non-bridging oxygen environments, atomic structure for natural magmas can also be potentially probed using high-resolution 3QMAS NMR.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.378.1-378.1
• /
• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.