• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.174-179
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• 2017

We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have $HfO_2$ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by pre-synaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Journal of the Optical Society of Korea
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• 제19권5호
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• pp.508-513
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• 2015

A capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and transparent bridge structures was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be exposed enough to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies the technological clue for ensuring long-term reliability to the highly flexible and transparent TSP made by using conventional fabrication processes.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.72-72
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• 2010

탄소나노튜브(carbon nanotubes : CNTs)는 뛰어난 전기적, 물리적인 특성을 가지고 있기 때문에 다양한 분야에서 이를 활용하려는 노력들이 활발히 이루어지고 있다. CNTs의 전기적인 특성은 직경에 의해 결정되므로, 직경을 균일하게 제어하는 일이 CNTs를 기반으로 한 전자소자 응용에 가장 중요한 사항이라 할 수 있다. 일반적으로 화학기상증착법(chemical vapor deposition, CVD)으로 합성된 CNTs의 직경은 촉매의 크기에 의존하기 때문에, 촉매의 크기를 제어하기 위한 다양한 연구들이 활발히 진행되고 있다[1-3]. 하지만 CNTs의 성장온도 근처에서 촉매 입자는 표면 확산(surface diffusion)에 의해 응집(agglomeration)되기 때문에 작고 균일한 크기의 촉매를 얻기 어렵다. 본 연구에서는 Si(001) 기판 위에 지지층(supporting layer)인 Al의 두께를 변화시켜 증착하고, 열적산화과정을 통해 $Al_2O_3$ 층을 형성한 후 Fe을 증착하여 CNTs를 합성하였다. $Al_2O_3$ 지지층과 Fe 촉매입자의 구조와 화학적 상태를 원자힘현미경 (atomic force microscopy, AFM), 주사전자현미경 (scanning electron microscopy, SEM), 투과전자현미경 (transmission electron microscopy, TEM), X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 분석하였고, 성장된 CNTs는 SEM, TEM, 라만 분광법 (Raman spectroscopy)을 통해 분석하였다. 그 결과, $Al_2O_3$ 층은 두께에 따라 각기 다른 표면 거칠기(RMS roughness)와 결정립(grain)의 크기를 갖게 되며, 이러한 표면구조가 Fe 촉매입자의 표면확산에 의한 응집에 관여하여 CNTs의 직경에 영향을 미치는 것을 확인하였다. 또한 $Al_2O_3$ 지지층의 두께가 15 nm인 경우, Fe의 응집현상이 억제되어 좁은 직경분포를 지닌 고순도 단일벽 탄소나노튜브(Single-walled CNTs)가 성장되는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.103-107
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• 2023

To solve the reliability problem of organic devices that are often used outdoors, multifunctional gas barriers that block reactive gases such as moisture and oxygen and reflect harmful light such as ultraviolet rays are needed. In this study, ALD nanolaminate-based optically functional n-DBR was developed to overcome the poor gas permeability of polymer substrates and protect organic devices from harmful light. n-DBR not only achieved a WVTR of 8.76 × 10^-6 g·m^-2·day^-1, but also showed a visible light transmittance of 94.3% and an ultraviolet ray blocking ability of 2.67%. In particular, n-DBR based on a nanolaminate structure maintained its permeability characteristics even in a high temperature and high humidity environment despite being used as a layer of Al₂O₃. This functional barrier Structure can not only be used as a functional encapsulation barrier for the reliability of organic devices, but can also be used as a tinting film for vehicles.