• 한국세라믹학회지
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• 제28권3호
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• pp.179-188
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• 1991

The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.1055-1061
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• 2003

A study has been made of surface modification of various organic materials by ion implantation to increase the surface electrical properties. The substrate used were PP(polypropylene), PET(polyethylene teraphthalate), ECOP(ethylene copolyester), PS(polystyrene). N$_2$, Ar ion implantation was performed at energies of 40 and 50keV with fluences from 5${\times}$ 10$\^$15/ to 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$ with and without H$_2$O gas environment. Surface resistance decrease of implanted polymers was affected by ion implantation energy, ion species, atmosphere of chamber and kind of polymer. In result, surface conductivity of polymers irradiated with atmosphere gas H$_2$O was 10 times more higher than normal vacuum atmosphere, but after 90 hours, surface conductivity returned to the without H$_2$O gas atmosphere condition caused by aging effect. After vacuum forming, surface resistance value was changed to over 10$\^$16/$\Omega$/$\square$, because creation of surface cracks.

• 전기학회논문지P
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• 제59권4호
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• 한국분말재료학회지
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• 제5권4호
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• pp.265-272
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• 1998

For the purpose of investigating the effect of sintering atmosphere and carbon addition on sintered density and microstructural characteristics, the M3/2 grade high speed steel powders with the addition of carbon are sintered in vacuum and $20%H_2/79%N_2/l%CH_4$ gas atmosphere. With the addition of 0 wt%C, 0.45wt%C and 1.15 wt%C the optimum sintering temperatures decrease down to $1260^{\circ}C$, $1210^{\circ}C$ and $1150^{\circ}C$ respectively for the vacuum sintered specimen, and also decrease down to $1130^{\circ}C$, $1120^{\circ}C$ and $1115^{\circ}C$ for the gas sintered specimen. The threshold temperatures for full densification decrease steeply with increasing carbon content of the sintered specimen, while this temperatures are slowly decreased at high carbon content. The vacuum sintered specimen shows the primary carbides of MC and $M_6C$ type at the optimum sintering temperature, and eutectic carbides of $M_2C$ and Fe-Cr type are produced in the oversintered specimen. The gas sintered specimen exhibits M6C and Fe-Cr type primary carbides at the optimum sintering temperature. The eutectic carbides of $M_6C$ and Fe-Cr type and MX type carbonitride are shown for the oversintered specimen in the gas atmosphere. The hardness of gas sintered specimen shows high value of 830-860 Hv due to the increment of carbide precipitation.

• 한국재료학회지
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• 제21권8호
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• pp.461-467
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• 2011

Cu(In, Ga)$Se_2$ (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$, and $Se^{4+}$ ions at -0.6 V (SCE) and pH. 1.8. In order to induce recrystallization, the electrodeposited $Cu_{1.00}In_{0.81}Ga_{0.09}Se_{2.08}$ (25.0 at.% Cu + 20.2 at.% In + 2.2 at.% Ga + 52.0 at.% Se) precursor films were annealed under a high Se gas atmosphere for 15, 30, 45, and 60 min, respectively, at $500^{\circ}C$. The Se amount in the film increased from 52 at.% to 62 at.%, whereas the In amount in the film decreased from 20.8 at.% to 9.1 at.% as the annealing time increased from 0 (asdeposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted with the In present in the precursor films, resulting in the formation of the volatile $In_2Se$. CIGS precursor grains with a cauliflower shape grew as larger grains with the $CuSe_2$ and/or $Cu_{2-x}Se$ faceted phases as the annealing times increased. These faceted phases resulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the empty spaces between the grains were not removed via annealing. Uniform thicknesses of the $MoSe_2$ layers occurred at the 45 and 60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused through the CIGS film. The results obtained in the present research were sufficiently different from comparable studies where the recrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

• 한국대기환경학회지
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• 제23권4호
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• pp.457-465
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• 2007

This study was performed to estimate the gas-particle partitioning of organochlorine pesticides (OCPs) in atmosphere, the samples were collected by PUF high volume air sampler for two years from June, 2000 to June, 2002. The gas phase fraction of ${\alpha/\gamma}-HCH$, heptachlor epoxide, ${\alpha/\gamma}-chlordane$ and trans-nonachlor was over 90%. But the gas phase fraction of ${\beta}-HCH$, p,p'-DDE, endosulfan sulfate, p,p'-DDD and p,p'-DDT was range of 20% through 80%, which means the gas phase fraction of OCPs components described above is sensitive to temperature. The correlation between the gas phase fraction and molecular weight of each OCPs component was not found in this research. The slope of regression line between gas-particle partitioning coefficient(${\log}K_p$) and subcooled liquid vapor(${\log}{P^o}_L$), gal-particle partitioning coefficient(${\log}K_p$) and octanol-air partitioning coefficient(${\log}K_{oa}$) which show -0.54 and 0.43 was not steep. So the equilibrium state between gas and particle was not reached and in this state the particulate fraction was low.

• 오토저널
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• 제4권2호
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• pp.35-46
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• 1982

This paper deals with residual stress characteristics of ion-nitrided metal which is primarilly concerned with the effects of added carbon content in gas atmosphere. A small optimal amount of carbon content in gas atmosphere increase compound layer thickness, as well as to increase diffusion layer thickness and hardness. The residual stress and deflection of the specimens was measured in various elevated temperature at the surface of ion-nitrided metal and the internal stress distribution was calculated. It is found that compressive residual stress at the compound layer is largest at the compound layer, and decreases as the depth from the surface increases.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• 열처리공학회지
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• 제2권1호
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• pp.13-20
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• 1989

• Asian Journal of Atmospheric Environment
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• 제8권2호
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• pp.96-107
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• 2014

Extreme recovery of the thermal energy from the combustion of flue gas may bring about early gas condensation resulting in the increased formation of nitric acid vapor. The behavior of the nitric acid formed inside the stack and in the atmosphere was investigated through a computer-aided simulation in this study. Low temperatures led to high conversion rates of the nitrogen oxide to nitric acid, according to the Arrhenius relationship. Larger acid plumes could be formed with the cooled flue gas at $40^{\circ}C$ than the present exiting gas at $115^{\circ}C$. The acid vapor plume of 0.1 ppm extended to 25 m wide and 200 m high. The wind, which had a seasonal local average of 3 m/s, expanded the influencing area to 170 m along the ground level. Its tail stretched 50 m longer at $40^{\circ}C$ than at $115^{\circ}C$. The emission concentration of the acid vapor in the summer season was a little lower than in the winter. However, a warm atmosphere facilitated the Brownian motion of the discharged flue gas, finally leading to more vigorous dispersion.