• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.5-9
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• 1996

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.88-91
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• 2005

본 논문에서는 비정질 As-Ge-Se-S 박막의 에칭 레이트를 측정하였으며 As-Ge-Se-S 박막에 회절격자를 형성 시킨 후 선택적 에칭을 통한 엠보싱 홀로그램을 제작하였다. NaOH 수용액으로 0.26N, 0.33N, 0.40N 농도로 변화시키며 수행하였으며 에칭 시간에 따른 에칭되는 두께의 변화를 측정하였다. 에칭 레이트는 NaOH 용액의 농도가 0.26N, 0.33N, 0.40N 일 때 각각 $2.5{\AA}/s$, $3.3{\AA}/s$, $3.9{\AA}/s$ 였다. 또한 2차원 엠보싱 회절격자를 형성 시킨후 0.26N NaOH용액으로 60초간 선택적 에칭을 수행하여 AFM(Atomic Force Microscopy) 으로 측정한 결과 선명한 엠보싱 형태의 회절격자를 확인 할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.85-91
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• 1993

본 연구에서는 광기록 매질 중 광유기효과가 큰 비정질 As40Se15S35Ge10박막의 증착각도변화에 따른 구조 및 광학적 구조 및 광학적 물질특성에 대해 고찰하였다. 준비된 bulk와 박막이 비정질상(Amorphous phase)임을 XRD 분석을 통해 확인하였다. 특히, 증착각도의 변화에 따른 비정질 As40Se15S35Ge10박막에서의 유리질 천이온도의 변화와 상분리 현상을 연구하였다. 유리질 천이온도의 확인은 DSC, DTA, TGA를 이용한 분석실험을 통해 수행하였다. 실험 결과 벌크의 유리질 천이 온도는 약 $238^{\circ}C$였고, 0。, 60。, 80。로 증착된 박막은 각각 $202^{\circ}C$, $229^{\circ}C$, $201^{\circ}C$였으며 80。로 증착된 박막의 경우 가장 낮은 값을 보였다. 또한 연속상과 분산상으로의 상 분리 현상은 편광현미경에 의한 광학구조분석과 SEM-EDS를 이용한 표면확인 및 성분분석으로 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.119-122
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• 2004

This paper discovers that we form holographic grating in AsGeSeS thin film. Holographic grating is not developed in the length of 10,20,40nm, while it is formed in the thin film of 80nm though it shows very low diffraction efficiency. On the contrary, holographic grating is established in every thin film of Ag(10nm)/AsGeSeS(10,20,40,80nm). Lattice in 10,20 nm thin film builds up, and immediately disappears. In the case of 40nm thin film, even if holographic grating is made up, it seems to have a low diffraction efficiency. Apart from 10,20,40nm, it shows the highest diffraction efficiency in the thin film of 80nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.736-739
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• 2003

We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.91-94
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• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.146-149
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• 1993

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.525-527
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• 1987