Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Holographic grating formation in AsGeSeS(10,20,40,80nm) thin films

AsGeSeS(10,20,40,80nm) 박막에서의 홀로그래픽 격자 형성

  • Lee, Ki-Nam (Department of Electronic Materials Engineering of Kwangwoon Unil.) ;
  • Yoo, Chul-Ho (Department of Electronic Materials Engineering of Kwangwoon Unil.) ;
  • Kim, Jong-Bin (Division of Electronics and Information and Communication Engineering of Chosun Uni.) ;
  • Lee, Yeong-Jong (Department of Electronic Eng. Yeojoo Uni.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering of Kwangwoon Unil.)
  • 이기남 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과) ;
  • 이영종 (여주대학교 전자공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2004.05.06
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Abstract

This paper discovers that we form holographic grating in AsGeSeS thin film. Holographic grating is not developed in the length of 10,20,40nm, while it is formed in the thin film of 80nm though it shows very low diffraction efficiency. On the contrary, holographic grating is established in every thin film of Ag(10nm)/AsGeSeS(10,20,40,80nm). Lattice in 10,20 nm thin film builds up, and immediately disappears. In the case of 40nm thin film, even if holographic grating is made up, it seems to have a low diffraction efficiency. Apart from 10,20,40nm, it shows the highest diffraction efficiency in the thin film of 80nm.

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