• Carbon letters
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• v.12 no.2
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• pp.102-106
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• 2011

Carbon nanotubes (CNTs) have been synthesized by ferrocene-catalyzed pyrolysis of toluene. The influences of the experimental conditions on the morphology and microstructure of the product have been analyzed. To find the proper temperature for synthesis of CNTs, the experiment was performed in a temperature range from 800 to $1100^{\circ}C$. From content variation of ferrocene and thiophene as the catalyst, morphological change of carbon nanotubes has been observed. Also, the influence of the gas ratio of hydrogen and argon on the nanotube samples was analyzed by scanning electron microscopy and transmission electron microscopy.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.434-439
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• 2011

There are about 2.4million disabled in Korea, 2009. Also, Korean society entered into an aging society. Therefore disable and elderly are getting more involved in our society. This study proposes simple ramp design for wheel chair users and welding method and condition for manufacturing. In the middle of ramp, screw jack and motor are installed so that ramp can be moved left and right side. To make the ramp moves easily, ramp was fixed by installing LM guide on both sides. Ramp production for using Nd:YAG laser certain dissimilar welding in stainless steel sheet and cold reduced carbon steel. The output was fixed by 3kW, the speed was increased to 2~7m/min, Argon was used as shielding gas and the flow rate was changed to 10~30L/min. The proper welding condition is the output 3kW and welding speed 2~5m/min.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• KSBB Journal
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• v.27 no.5
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• pp.308-312
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• 2012

Argon-plasma jet (Ar-PJ) is generated by ionizing Ar gas, and the resulting Ar-PJ consists of a mixture of neutral particles, positive ions, negative electrons, and various reactive species. Although Ar-PJ has been used in various biomedical applications, little is known about the biological effects on cells located near the plasma-exposed region. Here, we investigated the effects of the Ar-PJ on actin cytoskeleton of mouse embryonic fibroblasts (MEFs) in response to indirect as well as direct exposure to Ar-PJ. This Ar-PJ was generated at 500 mL/min of flow rate and 100 V electric power by our device mainly consisting of electrodes, dielectrics, and a high-voltage power supply. Because actin cytoskeleton is the key cellular machinery involved in cellular movement and is implicated in regulation of cancer metastasis and thus resulting in a highly desirable cancer therapeutic target, we examined the actin filament architectures in Ar-PJ-treated MEFs by staining with an actin-specific phalloidin labeled with fluorescent dye. Interestingly, the Ar-PJ treatment causes destabilization of actin filament architectures in the regions indirectly exposed to Ar-PJ, but no differences in MEFs treated with Ar gas alone and in untreated cell control, indicating that this phenomenon is a specific cellular response against Ar-PJ in the live cells, which are indirectly exposed to Ar-PJ. Collectively, our study raises the possibility that Ar-PJ may have potential as anti-cancer drug effect through direct destabilization of the actin cytoskeleton.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.573-580
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• 2000

MPT, which has been developed recently, is very tolerant to aqueous samples. Several types of MPT have been investigated and is found that the double concentric tube could sustain a stable plasma at a low plasma gas flow rate. However, the tip of torch is easily ruined. Triple concentric torch has shown the best stability and the plasma shape, much like that of ICP, especially when the central channel is quartz. The plasma is exposed and mixed with air as is suggested from the background spectrum, which leads to quenching of He MPT. Sensitivity of helium MPT equipped with a membrane desolvator has shown 10 times lower than that of Argon MPT for most of elements except for the ones with relatively high excitation energy. He MPT requires small plasma flow rate (about 1.6 L/min), stable and simple to use. Excitational temperature and electron number density measured are 4950 K and 3.28 ${\times}$ $10^{14}cm^{-3}$, respectively.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean Chemical Society
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• v.29 no.4
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• pp.382-389
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• 1985

The effect of plasma operational parameters for the determination of rare earth elements(REE) by means of inductively coupled plasma(ICP) spectrometry was investigated. While the increase in the flow rate of carrier gas argon enhanced the sensitivity and lowered the detection limit, significant ionization interferences were observed. The decrease in RF power increased the signal to background ratio. The observation point showing the lowest ionization interference was slightly higher than the position where the spatial profile of the analyte reached the maximum. The detection limits of the spectral lines commonly used for the determination of REE were measured and the spectral lines relatively free from spectral interferences were chosen.

• Journal of Adhesion and Interface
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• v.5 no.4
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• pp.9-16
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• 2004

Silk fibers were subjected to argon and ethylene plasma treatments in order to improve the interfacial adhesion with polylactic acid (PLA). After the plasma surface treatment, the surface morphology and surface adhesion of silk fibers to the PLA resin were largely changed. Various plasma treatment conditions were used in this work: 10, 25, 50, 100 and 150 W of electric power, 1, 3, 5, 7 and 10 minutes of treatment time, and 10 and 50 sccm of a gas flow rate. The interfacial shear strength of plasma-treated Silk/PLA biocomposites was measured by a single fiber micro-droplet debonding test method. The result provided an optimal plasma treatment condition to obtain the improved interfacial adhesion in the Silk/PLA biocomposites.