• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• Journal of Power System Engineering
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• v.18 no.6
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• pp.146-152
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• 2014

Mg-Sn nanoparticles were prepared by an arc-discharge method in a mixture atmosphere of argon and hydrogen gases. Phases, morphologies, and microstructures of the nanoparticles were investigated by means of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found that the intermetallic compound of $Mg_2Sn$ was generated and coexisted with metallic phases of Mg and Sn within nanoparticles. Basedon the model cell, the electrochemical properties were also explored by discharge-charge cycling, cyclic voltammetry, and electrochemical impedance spectroscopy. The initial capacity of the first cycle reached 430 mAh/g. Two visible plateaus at 0.2-0.3 and 0.5-0.75V were observed in the potential profiles, which can attributed to alloying/de-alloying reactions between Li and Mg2Sn, respectively.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.118-128
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• 2017

The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1823-1825
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• 2004

Spherically convergent beam fusion device accelerate ions, which are generated between outer anode and inner grid cathode, toward the spherical center. The collision of opposite direction ions give rise to fusion reactions. Spherically convergent beam fusion device is very simple and compact, therefore the device has a potential that is applied to a portable neutron source. An experimental device consist of a 20cm-diameter spherical mesh-type anode and 7cm-diameter open spherical grid cathode and was maintained at a constant pressure of about 1333 Pa by feeding argon gas.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.162-166
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• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1569-1572
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• 2007

A two-dimensional fluid simulation code has been developed in order to investigate discharge phenomena and to improve plasma luminous efficiency in a Hg flat fluorescent lamp (FFL) for an LCD backlight unit. In this study, the method of a two-dimensional fluid simulation for FFL is explained and the simulation results of Hg-Ar-Ne mixture gas are presented for the enhancement of the luminance efficiency. The effects of various parameters, such as driving voltage, frequency, and gas mixture ratio, are investigated. The luminance efficiency increased with increasing fraction of mercury but the increasing fraction of argon did not affect the efficiency much.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1898-1900
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• 1996

The Laser aided diagnostic method makes it possible to diagnose plasma characteristics which have never been done by other one. The aim of this study is to measure the electron density profile of an arc plasma by Mach-Zenhder interferometer. The two laser beams (He-Ne and Argon Lasers), which are different in wavelength, pass across an arc plasma and meet a change of refractivity which makes fringe shifts. From this effects we could find densities of electron and neutral particle.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1400-1402
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• 1994

Plasma polymerized thin films was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The molecular structure of thin films was investigated by GPC and FT-IR and then was discussed in relation to its quality as a resist. In the case of plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing pressure with RIE 80.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2044-2046
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• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.