• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.1-7
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• 2015

This paper addresses technical problems of thermal contact conductance or resistance which inevitably occurs in most cryogenic engineering systems. The main focus of this paper is to examine what kind of physical factors primarily influences the thermal contact resistance and to suggest how it can be minimized. It is a good practical rule that the contact surface must have sub-micron roughness level with no oxide layer and be thinly covered by indium, gold, or Apiezon-N grease for securing sufficient direct contact area. The higher contact pressure, the lower the thermal contact resistance. The general description of this technique has been widely perceived and reasonable engineering results have been achieved in most applications. However, the detailed view of employing these techniques and their relative efficacies to reduce thermal contact resistances need to be thoroughly reviewed. We should consider specific thermal contact conditions, examine the engineering requirements, and execute each method with precautions to fulfil their maximum potentials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• 한국작물학회지
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• 제40권2호
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• pp.125-132
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• 1995

유형이 다른 품종들간에 기공밀도와 기체확산저항의 차이와 광합성 속도에 미치는 영향 등을 비교 검토한 바 일반적으로 Indica 품종의 기공밀도가 Japonica 품종보다 컸으나 기체확산은 작았다. Indica 품종과 Japonica 품종간의 교잡을 통하여 육성한 품종들의 기공밀도와 기체확산 저항은 중간가를 나타냈다. 기공밀도와 기체확산저항 광합성 속도 간에는 현저한 정의 상관을 보였지만 특수엽중과는 현저한 질의 상관을 보였고, 단엽면적과의 상관관계는 현저하지 않았다. Indica 품종과 Japonica품종간의 교잡을 통하여 Indica 품종의 기공밀도가 크고 기체확산저항이 낮은 특성과 Japonica 품종의 특수 엽중이 큰 특성을 결합할 수 있다면 광합성 속도를 더욱 높일 수 있으리라 추측된다.

• 한국재료학회지
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• 제17권10호
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.346.1-346.1
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• 2014

Porous nano crystalline $TiO_2$ is currently used as a working electrode in a dye-sensitized solar cell (DSSC). The conventional working electrode is comprised of absorption layer (particle size:~20 nm) and scattering layer (particle size:~300 nm). We inserted window layer with 10 nm particle size in order to increase transmittance and specific surface area of $TiO_2$. The electrochemical impedance spectroscope analysis was conducted to analysis characterization of the electronic behavior. The Bode phase plot and Nyquist plot were interpreted to confirm the internal resistance caused by the insertion of window layer and carrier lifetime. The photocurrent that occurred in working electrode, which is caused by rise in specific surface area, increased. Accordingly, it was found that insertion of window layer in the working electrode lead to not only effectively transmitting the light, but also increasing of specific surface area. Therefore, it was concluded that insertion of window layer contributes to high conversion efficiency of DSSCs.

• Journal of Microbiology and Biotechnology
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• 제12권1호
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• pp.31-38
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• 2002

Bacteria have evolved various types of resistance mechanism to toxic heavy metals, such as arsenic and antimony. An arsenical and antimonial resistant bacterium was isolated from a shallow creek draining a coal-mining area near Taebaek City, in Kangwon-Do, Korea. The isolated bacterium was identified and named as Pseudomonas sp. KM20 after biochemical and physiological studies were conducted. A plasmid was identified and its function was studied. Original cells harboring the plasmid were able to grow in the presence of 15 mM sodium arsenite, while the plasmid-cured (plasmidless) strain was sensitive to as little as 0.5 mM sodium arsenate. These results indicated that the plasmid of Pseudomonas sp. KM20 does indeed encode the arsenic resistance determinant. In growth experiments, prior exposure to 0.1 mM arsenate allowed immediate growth when they were challenged with 5 mM arsenate, 5 mM arsenite, or 0.1 mM antimonite. These results suggested that the arsenate, arsenite, and antimonite resistance determinants of Pseudomonas sp. KM20 plasmid were indeed inducible. When induced, plasmid-bearing resistance cells showed a decreased accumulation $of\;73^As$ and showed an enhanced efflux $of\;^73As$. These results suggested that plasmid encoded a transport system that extruded the toxic metalloids, resulting in the lowering of the intracellular concentration of toxic oxyanion. In a Southern blot study, hybridization with an E. coli R773 arsA-specific probe strongly suggested the absence of an arsA cistron in the plasmid-associated arsenical and antimonial resistance determinant of Pseudomonas sp. KM20.

• 한국세라믹학회지
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• 제29권1호
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• pp.35-40
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• 1992

Porous glass in the ZrO2-SiO2 system containing up to 30 mol% zirconia were prepared from the mixed solutions of Zr(O.nC3H7)4 and partially prehydrolyzed TEOS by the sol-gel method. Pore characteristics, physical properties and alkali resistance were investigated. The gels converted into the porous glass by heating at $700^{\circ}C$, it was found that the glass like skeleton was already made up in lower temperature regions. The specific surface area of the porous glass was 227 $m^2$/g, average mean pore size was about 19$\AA$ and porosity was 19.2%, pore characteristics and physical properties depended on heating temperature. Alkali resistance of the porous glass increased as the zirconia content increased, because of the appearance of Zr-enriched layer at glass surface.

• The Plant Pathology Journal
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• 제40권3호
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• pp.329-335
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• 2024

Phytophthora root and stem rot (PRR), caused by Phytophthora sojae, can occur at any growth stage under poorly drained and humid conditions. The expansion of soybean cultivation in South Korean paddy fields has increased the frequency of PRR outbreaks. This study aimed to identify four P. sojae isolates newly collected from domestic fields and evaluate race-specific resistance using the hypocotyl inoculation technique. The four isolates exhibited various pathotypes, with GJ3053 exhibiting the highest virulence complexity. Two isolates, GJ3053 and AD3617, were screened from 205 soybeans, and 182 and 190 genotypes (88.8 and 92.7%, respectively) were susceptible to each isolate. Among these accessions, five genotypes resistant to both isolates were selected. These promising genotypes are candidates for the development of resistant soybean cultivars that can effectively control PRR through gene stacking.

• 전기전자학회논문지
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• 제25권3호
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• pp.467-472
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• 2021

고온에서도 반도체 소자의 안정적인 동작이 필요하다. 반도체 소자의 구조중에서 고온에서 불안정한 전기적 응답을 야기할 수 있는 영역은 금속과 반도체가 접합하는 콘택층이다. 본 연구에서는 p형 SiC 층위에 니켈-실리사이드(NiSix)의 콘택층을 형성하는 공정과정에 포함되는 어닐링 공정 조건이 콘택 저항의 비저항과 전체 저항에 미치는 효과를 고찰하였다. 이를 위해, 4인치 p형 SiC층 위에 전송길이 이론(transfer length method: TLM) 측정을 위한 알련의 전극 패턴들을 형성하였고, 어닐링 온도(1700와 1800℃)와 어닐링 시간(30와 60분)을 달리하여 4종의 시료를 제조하였으며, TLM을 이용한 저항을 측정하였다. 그 결과, 어닐링 조건이 콘택층의 저항과 소자의 전기적 안정성에 영향을 미치는 사실을 확인하였다.

• Weed & Turfgrass Science
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• 제7권2호
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• pp.166-169
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• 2018

경남지역 제초제 저항성 피의 발생현황과 저항성 정도를 알아보기 위하여 벼 재배 논에서 100개체의 피 종자를 수집하여 ACCase 저해제인 cyhalofop-butyl에 대한 약량반응 실험을 수행한 결과, 수집한 피의 7%가 저항성으로 조사되었다. 선발된 감수성 5개체의 $GR_{50}$값은 평균 $147g\;a.i.\;ha^{-1}$로 나타났고, 함양 지역의 저항성 개체의 $GR_{50}$값은 $738g\;a.i.\;ha^{-1}$ 로 R/S (ratio of resistance to sensitivity)값은 5.01배로 나타났다. 현재 경남지역에서의 저항성 피의 발생 수준은 낮은 것으로 나타났지만, 저항성 피의 확산을 지연시키거나 막기 위해서는 주기적인 저항성 피의 모니터링과 체계적인 저항성 잡초 관리방안을 마련하여 수행할 필요가 있다.