• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.105-108
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• 2002

환경에 관한 관심이 증대되면서 Sn37Pb 솔더를 대체하기 위한 새로운 무연솔더의 개발이 진행되고 있다1). 또한 연구의 초점이 되고 있는 것이 플럭스의 사용에 관한 것이다. 플럭스는 솔더의 산화막을 제거하는데 필수적이지만, 플럭스 세정제의 독성 문제로 무플럭스 솔더링에 대한 관심이 크게 증대되고 있다2),3). 무플럭스 솔더링의 방법에는 여러 가지가 있으며, 그 중 한가지가 플라즈마를 이용한 방법이다4). 본 연구에서는 솔더표면의 이물질과 산화막을 제거하기 위한 플라즈마 처리가 접합 후, 접합부에 미치는 영향에 대해서 알아보았다. 기판은 Evaporator를 이용하여 Au/Cu/Ni/Al UBM을 증착한 Si-wafer를 사용하였다. 사용된 솔더는 Sn37Pb, Sn3.5Ag와 Sn3.5Ag0.7Cu 솔더볼이며, 열중 및 적외선 겸용 리플로 머신과 Ar＋H$_2$를 이용한 플라즈마 에쳐를 사용하여 범프를 형성하였다. 플라즈마 처리가 계면의 미세조직과 기계적 강도에 끼치는 영향을 알아보기 위하여 플라즈마 처리된 시편과 리플로 한 후의 시편을 비교 분석하였다. 전단시험기로 계면의 강도를 측정하였으며, 주사전자현미경으로 범프의 표면과 계면 및 전단파면을 관찰하고 이에 대하여 고찰하였다. 산화막제거를 위한 플라즈마 처리가 저음점인 솔더의 미세조직을 기존의 솔더링 접합부와는 다르게 변화시킴으로써 솔더부의 전체적인 특성에 영향을 끼치는 것을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of Ceramic Processing Research
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• v.21
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• pp.47-52
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• 2020

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largearea graphene at high speed. The effects of methane (CH₄), argon (Ar), and hydrogen (H₂) gases were investigated between 800 ℃ and 1,000 ℃ during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 ℃ to 800 ℃ had a higher I_D/I_G value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.

• Korean Journal of Pharmacognosy
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• v.39 no.2
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• pp.104-109
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• 2008

We previously reported that anti-inflammatory properties of poncirin, isolated from fruit of Poncirus trifoliata, might be the result from the inhibition of inducible nitric oxide synthase (iNOS), cyclooxygenase-2 (COX-2), tumor necrosis $factor-{\acute{a}}$ ($TNF-{\alpha}$) and interlukin-6 (IL-6) expression via the down-regulation of $NF{-\kappa}B$ binding activity. In this study, we investigated whether poncirin has an inhibitory effect on the production of pro-inflammatory mediators ex vivo and whether poncirin could relieve the symptoms of dextran sulfate sodium (DSS)-induced colitis in mice model of inflammatory bowel disease. Poncirin significantly inhibited the productions of NO, IL-6 and $TNF-{\alpha}$ in lipopolysaccharide (LPS)-induced mouse peritoneal macrophage. In addition, poncirin-treated mice when compared to control mice not receiving treatment recovered better from the weight loss caused by DSS-induced colitis. Changes in disease activity index (DAI) of poncirin-treated mice were also more favorable than for control mice and were comparable with mice treated with a typical anti-inflammatory-drug, 5-aminosalichylic acid (5-ASA). In addition, suppression of plasma NO and IL-6 productions of poncirin-treated mice was also observed in DSS-induced colitis. These results suggest that poncirin has potentially useful anti-inflammatory effects mediated by suppression of inflammatory mediator productions.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.23-23
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• 2018

In this study, new titanium alloys were prepared by adding elements such as tantalum (Ta), zirconium (Zr) and the like to complement the biological, chemical and mechanical properties of titanium alloys. The Ti-40Ta-xZr ternary alloy was formed on the basis of Ti-40Ta alloy with the contents of Zr in the contents of 0, 3, 7 and 15 wt. %. Plasma electrolytic oxidation (PEO), which combines high-voltage sparks and electrochemical oxidation, is a novel method to form ceramic coatings on light metals such as Ti and its alloys. These oxide film produced by the electrochemical surface treatment is a thick and uniform porous form. It is also composed of hydroxyapatite and calcium phosphate-based phases, so it has the characteristics of bone inorganic, non-toxic and very high bioactivity and biocompatibility. Ti-40Ta-xZr alloys were homogenized in an Ar atmosphere at $1050^{\circ}C$ for 1 hour and then quenched in ice water. The electrochemical oxide film was applied by using a power supply of 280 V for 3 minutes in 0.15 M calcium acetate monohydrate ($Ca(CH_3COO)_2{\cdot}H_2O$) and 0.02 M calcium glycerophosphate ($C_3H_7CaO_6P$) electrolyte. A small amount of 0.0075M zinc acetate and magnesium acetate were added to the electrolyte to enhance the bioactivity. The mechanical properties of the coated surface of Ti-40Ta-xZr alloys were evaluated by Vickers hardness, roughness test, and elastic modulus using nano-indentation, and the surface wettability was evaluated by measuring the contact angle of the coated surface. In addition, cell activation and differentiation were examined by cell culture of HEK 293 (Human embryonic kidney 293) cell proliferation. Surface properties of the alloys were analyzed by scanning electron microscopy(FE-SEM), EDS, and X-ray diffraction analysis (XRD).

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.31-37
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• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.28-28
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• 2001

$TiCl_44,{\;}AICl_3,{\;}H_2,{\;}Ar,{\;}NH_3$ 기체를 사용하여 플라즈마 화학 증착법으로 $(Ti_{1-x}AI_x)N$ 피막을 증착한 후 진공열처리 실험을 통해 열처리 전후에 나타나는 피막의 가계적 특성 변화 및 상변화 양상에 대해 연구하였다. 기판으로는 M2 고속도강과 알루미나(${\alpha}-Al_2O_3$)를 사용하였으며, 열처리 실험은 진공 열처리로를 이용하여 $800$ ~ $1100^{\circ}C$ 에서 진행하였다. M2 고속도강 위에 증착한 $(Ti_{1-x}AI_x)N$ 피막은 모두 (200) 우선 방위를 갖고 있었으며, AI의 함량이 높아짐에 따라 입자의 크기가 미세해져 $(Ti_{0.2}AI_{0.8})N$ 의 경우 수 nm의 업자들로 이루어져 있었다. 열처리 시간을 일정하게 하고, 그 온도를 증가시킬 경우 비교적 낮은 온도 영역($~900^{\circ}C$)에서는 경도 증가를 나타내지만, 열처리가 더욱 진행됨에 따라 다시 경도가 감소하는 양상을 나타내었으며, 열처리 온도를 일정하게 하고 열처리 시간을 변화 시킬 경우에도 초기에 경도가 증가하다가 열처리가 진행됨에 따라 경도가 다시 감소하는 현상을 관찰 하였다. 이때 경도증가 정도는 Al 함량이 높을 수록 뚜렷하고 오래 지속되었으며, $(Ti_{0.2}AI_{0.8})N$ 피막의 경우 열처리 전 $2000HK_{0.01}$에서 열처리 후 $4500HK_{0.01}$로, 매우 큰 경도 증가를 나타내었다. 이와 같은 열처리 전후의 기계적 특성 변화는 준 안정상의 $(Ti_{1-x}AI_{x})N$ 피막에서, 열처리가 진행됨에 따라 미세한 AlN 업자가 석출되면서 나타나는 현상으로, 고분해능 전자현미경(HRTEM) 분석을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다.