Journal of Ceramic Processing Research

  • Volume 21
  • /
  • Pages.47-52
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  • 2020
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  • 1229-9162(pISSN)
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  • 2672-152X(eISSN)
Ceramic Processing Research Center (한양대학교 세라믹연구소)
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Effect of gas condition on graphene synthesized by rapid thermal chemical vapor deposition

  • Yang Soo Lee (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Dong In Jeong (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Yeojoon Yoon (Department of Environmental Engineering, Yonsei University) ;
  • Byeongmin Baek (Nano Materials and Components Research Center, Korea Electronics Technology Institute) ;
  • Hyung Wook Choi (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
  • Seok Bin Kwon (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Do Hun Kim (Nano Materials and Components Research Center, Korea Electronics Technology Institute) ;
  • Young Joon Hong (Department of Nanotechnology and Advanced Material Engineering, Sejong University) ;
  • Won Kyu Park (Nano Material Division, Cheorwon Plasma Research Institute) ;
  • Young Hyun Song (Lighting Design & Component Research Center, Korea Photonics Technology Institute) ;
  • Bong Kyun Kang (Nano Materials and Components Research Center, Korea Electronics Technology Institute) ;
  • Dae Ho Yoon (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Woo Seok Yang (Nano Materials and Components Research Center, Korea Electronics Technology Institute)
  • Received : 2019.12.16
  • Accepted : 2020.05.04
  • Published : 20200000
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Abstract

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largearea graphene at high speed. The effects of methane (CH4), argon (Ar), and hydrogen (H2) gases were investigated between 800 ℃ and 1,000 ℃ during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 ℃ to 800 ℃ had a higher ID/IG value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.

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Acknowledgement

†Y.S. Lee, †D.I. Jeong, and †Y. Yoon contributed equally to this work. †Y.S. Lee, †D.I. Jeong, and †Y. Yoon designed and wrote this study.