• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.76-79
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• 2005

Dry etching of NiFe, NiFeCo, and Ta for magnetic random access memory (MRAM) by inductively coupled plasmas (ICPs) of $Cl_2/Ar$ has been carried out. NiFe and NiFeCo showed maximum etch rates at a particular ICP source power, but the etch rate of Ta increased with the ICP source power. The etch rates of the magnetic thin films increased with the RF chuck power, but decreased with the operating pressure and the $Cl_2$ concentration. To avoid a corrosion problem by chlorine, the etched samples were rinsed with de-ionized water for 5 minutes after etching. The etch profile showed a clean and smooth surface at 50% $Cl_2$ concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.135-140
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• 2015

Decomposition of carbon dioxide is studied using $Ar/CO_2$ mixture inductively coupled plasmas (ICP). Argon gas was added to generate plasma which has high electron density. To measure decomposition rate of $CO_2$, optical emission actinometry is used. Changing input power, pressure and mixture ratio, the plasma parameters and the spectrum intensity were measured using single Langmuir probe and spectroscope. The source characteristic of Carbon dioxide ICP observed from the obtained plasma parameters. The decomposition rate is evolved depending on the reaction and discharge mode. This result is analyzed with both the measurement of the plasma parameters and the dissociation mechanism of $CO_2$.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.72-77
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• 2021

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R² value. It means that the etch rate distribution is explained by the ion energy flux.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Journal of the Korean Chemical Society
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• v.40 no.4
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• pp.235-242
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• 1996

A surfatron-type microwave induced plasma (MIP) cavity has been constructed, which can be easily interfaced with a gas chromatograph. Various plasma gases such as He, Ar and N2 were used to generate the MIP and small amounts of CO2 gases were injected through the MIP to obtain characteristic spectrum of each plasma gas and to study feasibility of the MIP as a soft ionization source. Since He and Ar plasmas have high metastable state energy, it was not possible to detect sample gas in molecular state. With N2 plasma, however, a strong emission of molecular ions could be detected owing to its low metastable state energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• Textile Coloration and Finishing
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• v.16 no.5
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• pp.28-34
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• 2004

The polarizing film application exploits the unique physicochemical properties between PVA(Poly vinyl alcohol) film and CTA(Cellulose triacetate) film. However, hardly any research was aimed at improving the adhesion characteristics of the CTA film by radio frequency(RF) plasma treatment at argon(Ar) gaseous state. In this report, we deal with surface treatment technology for protective CTA film developed specifically for high adhesion applications. After Ar plasma, surface of the films is analyzed by atomic force microscopy(AFM), roughness parameter and peel strength. Furthermore, the wetting properties of the CTA film were studied by contact angle analysis. Results obtained for CTA films treated with a glow discharge showed that this technique is sensitive to newly created physical functions. The roughness and peel strength value increased with an increase in treatment time for initial treatment, but showed decreasing trend for continuous treatment time. The result of contact angle measurement refer that the hydrophilicity of surface was increased. AFM studies indicated that no considerable change of surface morphology occurred up to 3 minutes of treatment time, but a considerable uneven of surface structure resulted from treating time after 5 minutes.

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.12-17
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• 1995

Diamondlike carbon(DLC)films having good characteristics in mechanical and optical properties, were synthesized by rf-plasma enhanced chemical vapor deposition method. Methane, methane-hydrogen, or methane-argon were used as source gases. The infrared transparency and composition of the films were investigate. Especially, the anti-reflection effect of KLC film in infrared region was confirmed by depositing it on Ge/Si sample. When DLC films were deposited on the plastic substrates and thermal distortion, which were originated before and during deposition, respectively, played a role as a crack source of the films.