• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.153-154
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.410-410
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.103.2-103.2
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• 2007

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.1
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• pp.52-59
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• 2004

Recently, many researches for fine particles plasma have been focused on the fabrication of the new devices and materials in micro-electronic industry, although reduction or elimination of fine particles was interested in plasma processing until now on. In order to enhance their utilization, it is necessary to control and analyze fine particle behavior. Therefore, we developed simulation model of fine particles in RF Ar plasmas. This model consists of the calculation parts of plasma structure using a two-dimensional fluid model and of fine particle behavior. The motion of fine particles was derived from the charge amount on the fine particles and forces applied to them. In this paper, Ar plasma properties using two-dimensional fluid model without fine particles were calculated at power source voltage 15[V] and pressure 0.5[Torr]. Time-averaged spatial distributions of Ar plasma were shown. The process on the formation of Coulomb crystal of fine particles was investigated and it was explained by combination of ion drag and electrostatic forces. And also analysis on the forces of fine particles was presented.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.50-53
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• 1998

We report on the spectroscopic investigation of optical-field ionized plasmas in the soft X-ray spectral region. The experiment was carried out by focusing pulses of the high-power Ti:Sapphire laser with an energy of ~ 40 mJ and time duration of ~30 fs into a gas jet of krypton, xenon, and argon from a pulsed nozzle. Strong soft X-ray emission on lines from ionic stages of $Kr^{7+} , Kr^{8+} , Xe^{7+} , Ar^{7+} , and Ar^{8+}$ is reported. The experimental result was found to be in good agreement with theoretical prediction.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.