• Journal of Welding and Joining
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• v.20 no.2
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• pp.65-70
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• 2002

This study was to evaluate GMA welding characteristics of the A15083-O aluminum alloy according to the shield gas mixing ratio and heat input change. The GMA welding of the base metal was carried out with flour different shield gas mixing ratios(Ar100%+He0%, Ar67%+He33%, Ar50%+He50%, and Ar33%+He67%). Regarding the if1uence on the bead shape of the shield gas mixing ratio and heat input, the bead width was greatest in Ar100%+He0% mixture. But the penetration depth and area were greatest in Ar33%+He67% mixture considering that the lower Ax gas ratio, the higher bead depth and area. Also, dilution was also best in the shield gas mixing ratio. The size and number of deflects were least in Ar33%+He67% mixture. Higher He gas ratio resulted in less deflects detected by the radiographic inspection.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.6
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• pp.618-623
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• 2014

This study, analyzed the waveform and mechanical properties of flux cored arc Welding on SM45C. $CO_2$ 10% + Ar 90% shows the lowest standard deviation and shunt ratio at which the arc was most stable. $CO_2$ 10% + Ar 90% is equal to $CO_2$ 20% + Ar 80%. therefore, $CO_2$ 20% + Ar 80% is the best of mixture gases. The hardness test result for the gas mixture ratio of $CO_2$ 10% + Ar 90% was HV 249.7 which is the highest measured value. According to tensile test results, the tensile strength increased with increasing Ar in the mixture gas. This was because of the inertness of the argon, which does not combine with other elements, causing $CO_2$ to combine with pearlite and ferrite and decreasing the maximum tensile strength. Microstructural examination results show that with increasing Ar, ferrite generation decreases while the mild microstructure increases which influences the hardness.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.211-212
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• 2012

ZnO submicron particles were grown on Au-catalyzed Si substrate by a vapor phase transport (VPT) growth process under different mixture gas ratio at growth temperature of $900^{\circ}C$. The structural and optical properties of the ZnO submicron particles were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO submicron particles could be clustered with the $O_2/Ar$ mixture gas ratio(%) higher than 10%, and it was mainly determined by the gas ambient. Particularly, when the $O_2/Ar$ mixture gas ratio was 30%, it was observed the ZnO submicron particles with diameters in the range of 125 to 500 nm and the narrowest full width at half maximum (FWHM) of XRD and PL spectra with $0.121^{\circ}$ and 92 meV, respectively. It was found that the structural and optical properties of the ZnO submicron particles were improved with increasing the $O_2/Ar$ mixture gas ratio through the XRD and PL spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.248-251
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• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.38-43
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• 2009

The optimization of the welding parameters was studied to maximize the weldability and minimize the amount of spatter in the MAG welding of automotive steel sheets under different shielding gas composition ratio. JS-EFSC, JS-SPHC steel plates and Ar mixture gases were used as a substrate and shielding gas for welding respectively. The five welding parameters were selected through preliminary experiments and their effects on the weldability were analyzed. Experiments were performed using the Taguchi experimental method. As results, appropriate range for welding could be achieved. Amount of spatter in 80%Ar+20%$CO_2$ shielding gas was 20% of that of $CO_2$welding. Therefore, in terms of high productivity and welding cost, Ar mixture gas(80%Ar+20%$CO_2$) was recommended as a shielding gas for application of MAG process, indicating the low spatter and good weld quality.