• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• 대한금속재료학회지
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• 제47권2호
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• pp.107-113
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• 2009

Molten iron with 2 mass % carbon content was decarbonized at 1823 K~1923 K by bubbling $Ar+O_2$ gas through a submerged nozzle. The reaction rate was significantly influenced by the oxygen partial pressure and the gas flow rate. Little evolution of CO gas was observed in the initial 5 seconds of the oxidation; however, this was followed by a period of high evolution rate of CO gas. The partial pressure of CO gas decreased with further progress of the decarbonization. The overall reaction is decomposed to two elementary reactions: the decarbonization and the dissolution rate of oxygen. The assumptions were made that these reactions are at equilibrium and that the reaction rates are controlled by mass transfer rates within and around the gas bubble. The time variations of carbon and oxygen contents in the melt and the CO partial pressure in the off-gas under various bubbling conditions were well explained by the mathematical model. Based on the present model, it was explained that the decarbonization rate of molten iron was controlled by gas-phase mass transfer at the first stage of reaction, but the rate controlling step was transferred to liquid-phase mass transfer from one third of reaction time.

• 한국표면공학회지
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• 제37권3호
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• 전자공학회논문지D
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• 제36D권5호
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• pp.29-35
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• 1999

Pt박막의 ICP 식각을 위한 Cl\sub 2 \/Ar 가스 플라즈마에 O\sub 2\ 가스를 첨가하여 Pt 식각 메카니즘을 XPS와 QMS로 조사하였다. 또한 single Langmuir probe를 사용하여 이온전류밀도를 Ar/Cl\sub 2 \/O\sub 2\ 가스 플라즈마에서 측정하였다. O\sub 2\가스 첨가비가 증가할수록 Cl과 Ar species가 급격하게 감소하고 이온전류밀도 역시 감소함을 QMS와 single Langmuir probe로 확인하였다. Pt 식각율의 감소는 O\sub 2\가스 첨가비가 증가할수록 반응성 species와 이온전류밀도의 감소에 기인함을 의미한다. 150 nm/min의 치대 식각율과 2.5의 산화막식각 선택비가 50 sccm의 Ar/Cl\sub 2 \/O\sub 2\ 가수 유량, 600 W의 RF 전력, 125 V의 dc 바이어스 전압 및 10mTorr의 반응로 압력에서 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• 방사성폐기물학회지
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• 제18권3호
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• pp.355-362
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• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.

• 한국재료학회지
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• 제12권1호
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• pp.68-74
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• 2002

The lead has to be removed for the recycling of copper alloy. The lead cannot be removed from the copper alloy by oxidation. It can be removed by the evaporation because of its high vapor pressure. However, rare information is found on removal of lead from copper alloy. The purpose of present work is to provide a fundamental knowledges on the removal of lead from the copper alloy by evaporation. Gas injection was made in molten copper alloy, and the evaporation rate of lead was measured. The influence of Ar gas flow rata(2~4 L/min), initial contents of lead(2~4wt%Pb), temperature(1200~140$0^{\circ}C$) was investigated based on the thermodynamic and the kinetics. The rate constant is increased with increasing flow rate of Ar and temperature. Though amount of lead removed is increased with higher initial lead concentration, the rate constant is not changed significantly. The activation energy is estimated from the temperature dependence of the rate constant. Also removal of lead from the copper by adding chloride was made for the comparison.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.