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Fabrication of Low Temperature Poly-Silicon by Inductively Coupled Plasma Assisted Magnetron Sputtering  

유근철 (서울대학교 재료공학부)
박보환 (서울대학교 재료공학부)
주정훈 (군산대학교 재료공학부)
이정중 (서울대학교 재료공학부)
Publication Information
Journal of the Korean institute of surface engineering / v.37, no.3, 2004 , pp. 164-168 More about this Journal
Abstract
Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.
Keywords
Polycrystalline silicon; ICP magnetron sputtering;
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