대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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- Pages.25-28
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- 2001
SiCl$_4$ 와 Cl$_2$ 가스에 의한 InP, InGaAs 및 InAIAs의 반응성 이온 식각: 가스유량, rf 전력, 공정압력, Ar 첨가의 영향
Reactive Ion Etching of InP, InGaAs and InAIAs by SiCl$_4$ and Cl$_2$ Gases: Effects of Gas Flow Rate, rf Power, Process Pressure and Ar Addition
초록
In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl
키워드