• Journal of Surface Science and Engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Journal of Korean Tunnelling and Underground Space Association
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• v.19 no.3
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• pp.375-388
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• 2017

In order to solve the traffic congest and environmental issues, small-cross section tunnel for small car only is increasing, but there is not standard for installation of disaster prevention facility. In this study, in order to investigate the behavioral characteristics of thermal environment and smoke in a small cross section tunnels with a large port exhaust ventilation system, the A86, the U-Smartway and the Seobu moterawy tunnel, Temperature and CO concentration in case of fire according to cross sectional area, heat release rate and exhaust air flow rate were analyzed by numerical analysis and the results were as follows. As the cross-sectional area of the tunnel decreases, the temperature of the fire zone increases and the rate of temperature rise is not significantly affected by heat release rate. However, there is a difference depending on the change of the exhaust air flow rate. In the case of applying the exhaust air flow rate $Q_3+2.5Ar$ of the large port exhaust ventilation system, the temperature of the fire zone was 7.1 times for A86 ($Ar=25.3m^2$) and 5.4 time for U-smartway ($Ar=37.32m^2$) by Seobu moterway tunnel ($Ar=46.67m^2$). The CO concentration of fire zone also showed the same tendency. The A86 tunnels were 10.7 times and the U-Smartways were 9.5 times more than the Seobu moterway. Therefore, in the case of a small section tunnel, the thermal environment and noxious gas concentration due to the reduction of the cross-sectional area are expected to increase significantly more than the cross-sectional reduction rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1051-1056
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• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.65-66
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• 2005

Etching characteristics of $Ge_2Sb_2Te_5$ (GST) films were investigated using $Cl_2$/Ar inductively coupled plasma.We examined the etching characteristics such as etching rate and selectivity over oxide films of GST films using inductively coupled plasma (ICP) with various etching parameters such as $Cl_2$/Ar gas mixing ratios, ICP source power, pressure, and bias power. The maximum etch rate of GST film was $2,815{\AA}$/min and the selectivity higher than 12:1 over the oxide films was also obtained at the $Cl_2$ flow rates of 40 sccm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.320-326
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• 2019

Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of environmental and Sanitary engineering
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• v.13 no.1
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• pp.147-156
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• 1998

A synthesis process for PZT powder using $NH_{3}$ gas as a precipitator in a bubble column reactor was experimentally successful in develope a production process of piezoelectric ceramic PZT powder. Also as a reaction by coprecipitation, the crystalized PZT ceramic powder at the condition of over pH 9 could be attained. The time needed for reaction on the condition of $NH_{3}$ gas flow rate = 0.5 1/min, Ar gas flow rate = 2.0 1/min. Feed flow rate = 2.33 ml/sec was less than five minutes, so it could synthesize PZT powder for such a few moments. And the synthesized PZT powder was $0.17{\mu}m$ in diameter on an average.

• Fire Science and Engineering
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• v.10 no.2
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• pp.40-51
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• 1996

A synthesis process for PZT powder using NH$_3$ gas as a precipitator in a bubble column reactor was experimentally successful in develope a production process of Piezoelectric ceramic PZT powder. Also as a reaction by coprecipitation, the crystalized PZT ceramic powder at the condition of over pH 9 could be attained. The time needed for reaction on the condition of NH$_3$ gas flow rate=0.5 1/min, Ar gas flow rate=2.0 1/min, Feed flow rate=2.33 ml /sec was less than five minutes, so it could synthesize PZT powder for such a few moments. And the synthesized PZT powder was 0.17${\mu}{\textrm}{m}$ in diameter on an average.